IP Library Granted Patent US 7,485,880
Granted Patent B2
US 7,485,880 · App. 11/586,190 · Granted Feb 3, 2009

Charged particle beam scan and irradiation method, charged particle beam apparatus, workpiece observation method and workpiece processing method

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Quick Facts
Patent No.
US 7,485,880
App. No.
11/586,190
Granted
Feb 3, 2009
Kind
B2
Abstract

After a scan area for observing or processing a mask is set, a computer of the charged particle beam apparatus determines a plurality of scan lines in the scan area by the following steps of: setting a scan line along the outer circumference of the scan area; determining a scan line inside and along the thus set scan line; determining a scan line inside and along the thus determined scan line; and repeating the step of determining a scan line. After the scan lines are determined, the computer controls a scanning circuit to apply an ion beam to the scan lines while thinning out scan lines and/or pixels.

Claims (26)

1. A charged particle beam scan and irradiation method using a charged particle beam apparatus that utilizes charged particle beam irradiation to observe or process a workpiece comprising the steps of:

setting an observation or process area;

determining a plurality of scan lines in the process or observation area; the step of determining a plurality of scan lines comprising the steps of:

setting a scan line along the outer circumference of the observation or process area;

determining a scan line inside and along the thus set scan line;

determining a scan line inside and along the thus determined scan line; and

repeating the step of determining a scan line; and

applying the charged particle beam to the determined scan lines.

2. The charged particle beam scan and irradiation method according to claim 1 , wherein the step of applying the charged particle beam to the scan lines comprises the steps of:

applying the charged particle beam to one scan line with an interval formed of a predetermined number of pixels;

after the last pixel in the previous step is irradiated, returning to the start position of the scan line and applying the charged particle beam to pixels, to which the charged particle beam is not yet applied, with the interval formed of the predetermined number of pixels;

repeating the step of applying the charged particle beam until all the pixels in the scan line are irradiated with the charged particle beam; and

shifting to the next scan line and repeating the step of applying the charged particle beam until all the pixels in the process area are irradiated with the charged particle beam.

3. The charged particle beam scan and irradiation method according to claim 1 , wherein the step of applying the charged particle beam to the scan lines comprises the steps of:

applying the charged particle beam to each of the scan lines with an interval formed of a predetermined number of pixels; and

after the last scan line is irradiated, returning to the first scan line and repeating the step of applying the charged particle beam to pixels in each of the scan lines, to which the charged particle beam is not yet applied, with the interval formed of the predetermined number of pixels until all the pixels in the process area are irradiated with the charged particle beam.

4. The charged particle beam scan and irradiation method according to claim 1 , wherein the step of applying the charged particle beam to the scan lines comprises the steps of:

applying the charged particle beam to one scan line;

applying the charged particle beam, among the scan lines inside the one scan line, not to a predetermined scan line but to the scan line next to the predetermined scan line; and

applying the charged particle beam to the predetermined scan line to which the charged particle beam was not applied in the previous step.

5. The charged particle beam scan and irradiation method according to claim 1 , characterized in that in the step of applying the charged particle beam to the scan lines, the scan start position of a scan line and the scan start position of a scan line next to the scan line are spaced apart from each other.

6. A charged particle beam apparatus that utilizes charged particle beam irradiation to observe or process a workpiece comprising:

scan line determining means that after an observation or process area is set, determines a plurality of scan lines in the process or observation area by the following steps of: setting a scan line along the outer circumference of the observation or process area; determining a scan line inside and along the thus set scan line; determining a scan line inside and along the thus determined scan line; and repeating the step of determining a scan line; and scanning control means that controls the charged particle beam to be applied to the scan lines determined by the scan line determining means.

7. A workpiece observation method comprising the steps of: applying a charged particle beam to a workpiece using the charged particle beam scan and irradiation method according to claim 1 ; and

forming a workpiece pattern image based on the detected intensity of secondary charged particles emitted from the workpiece.

8. A workpiece processing method comprising the step of applying a charged particle beam to a workpiece to process it using the charged particle beam scan and irradiation method according to claim 1 .

Assignments (4)
CHANGE OF ADDRESS Recorded Sep 17, 2025
From: HITACHI HIGH-TECH SCIENCE CORPORATION
To: HITACHI HIGH-TECH SCIENCE CORPORATION
Reel/Frame 072903/0543 →
CHANGE OF NAME Recorded Sep 17, 2025
From: HITACHI HIGH-TECH SCIENCE CORPORATION
To: HITACHI HIGH-TECH ANALYSIS CORPORATION
Reel/Frame 072907/0356 →
CHANGE OF NAME Recorded Sep 17, 2014
From: SII NANOTECHNOLOGY INC.
To: HITACHI HIGH-TECH SCIENCE CORPORATION
Reel/Frame 033764/0615 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 8, 2007
From: KOZAKAI, TOMOKAZU; MURAMATSU, MASASHI; HAGIWARA, RYOJI
To: SII NANO TECHNOLOGY INC.
Reel/Frame 018776/0298 →