Semiconductor devices and methods of manufacture thereof
View Patent ↗Semiconductor devices and methods of manufacture thereof are disclosed. A preferred embodiment comprises a method of forming an insulating material layer. The method includes forming a barrier layer and forming a rare earth element-containing material layer over the barrier layer.
1. A method of fabricating a semiconductor device, the method comprising:
providing a workpiece;
forming a barrier layer over the workpiece;
before forming the barrier layer over the workpiece, forming a layer of oxide over the workpiece, and exposing the layer of oxide to nitrogen to form an oxynitride layer;
forming a rare earth element-containing insulating material layer over the barrier layer, wherein at least the barrier layer and the rare earth element-containing insulating material layer comprise a dielectric material; and
forming a gettering layer over the rare earth element-containing insulating material layer, wherein forming the gettering layer comprises causing at least a portion of oxygen of the oxynitride layer to move through the barrier layer and the rare earth element-containing insulating material and combine with a material of the gettering layer.
2. The method according to claim 1 , wherein forming the barrier layer comprises forming a layer of HfO 2 , HfSiO, or Al 2 O 3 .
3. The method according to claim 1 , wherein forming the rare earth element-containing insulating material layer comprises forming at least one material layer comprising TiO 2 , Ta 2 O 5 , or a bilayer of TiO 2 and Ta 2 O 5 , and doping the at least one material layer with a rare earth oxide comprising one or more rare earth elements.
4. The method according to claim 3 , wherein doping the at least one material layer with the rare earth oxide comprises doping the at least one material layer with about 30% or less of the rare earth oxide.
5. The method according to claim 1 , further comprising, before forming the barrier layer over the workpiece, forming a layer of oxide over the workpiece, and exposing the layer of oxide to nitrogen to form an oxynitride layer.
6. The method according to claim 1 further comprising forming an electrode over the rare earth element-containing insulating material layer, wherein the electrode comprises TiN, TaN, Ru, RuO 2 , TiSiN, TaSiN, HfSiN, TiHfN, TiCN, TaCN, TiXN, AlN, RE 1 RE 2 N, and/or multiple layers or combinations thereof, wherein X comprises a rare earth element, wherein RE 1 RE 2 N comprises a nitride of a first rare earth element RE 1 and a second rare earth element RE 2 , and wherein the second rare earth element RE 2 comprises a different rare earth element than the first rare earth element RE 1 .