Method of manufacture of an integrated circuit system with self-aligned isolation structures
View Patent ↗An integrated circuit system is provided including providing a substrate, forming an isolation structure base in the substrate without removal of the substrate, and forming a first transistor in the substrate next to the isolation structure base.
1. A method of manufacture of an integrated circuit system comprising:
providing a substrate;
forming an isolation structure base in the substrate through a recess without removal of the substrate;
forming an epitaxial layer over the isolation structure base after annealing the substrate;
forming a trench through the epitaxial layer and into the substrate to the isolation structure base filled with isolation material; and
forming a first transistor in the substrate next to the isolation structure base.
2. The method as claimed in claim 1 further comprising forming a second transistor next to the isolation structure base and at an opposite side of the first transistor.
3. The method as claimed in claim 1 further comprising:
forming a self-aligned inverted T-shaped isolation structure with a gap fill of the trench.
4. The method as claimed in claim 1 further comprising growing the epitaxial layer over the substrate and the isolation structure base.
5. The method as claimed in claim 1 wherein forming the isolation structure base in the substrate includes annealing the isolation structure base to form a buried oxide.
6. A method of manufacture of an integrated integrated circuit system comprising:
providing a substrate;
forming an isolation structure base in the substrate through a recess without removal of the substrate;
forming an epitaxial layer over the isolation structure base after annealing the substrate;
forming a trench through the epitaxial layer and into the substrate to the isolation structure base;
forming a self-aligned inverted T-shaped isolation structure with a gap fill of the trench; and
forming a first transistor in the substrate next to the self-aligned inverted T-shaped isolation structure.
7. The method as claimed in claim 6 wherein forming the isolation structure base includes forming a buried oxide by implantation of oxygen.
8. The method as claimed in claim 6 wherein forming the trench through the epitaxial layer and into the substrate to the isolation structure base includes etching a self-aligned trench to the isolation structure base with a patterned mask.
9. The method as claimed in claim 6 wherein forming the self-aligned inverted T-shaped isolation structure with the gap fill of the trench includes forming an isolation structure column with a high density plasma oxide fill of the trench.
10. The method as claimed in claim 6 wherein forming the self-aligned inverted T-shaped isolation structure with the gap fill of the trench includes forming an isolation structure column in contact with a buried oxide.