Semiconductor component and method of manufacture
View Patent ↗A semiconductor component that includes an integrated passive device and method for manufacturing the semiconductor component. Vertically integrated passive devices are manufactured above a substrate. In accordance with one embodiment, a resistor is manufactured in a first level above a substrate, a capacitor is manufactured in a second level that is vertically above the first level, and a copper inductor is manufactured in a third level that is vertically above the second level. The capacitor has aluminum plates. In accordance with another embodiment, a resistor is manufactured in a first level above a substrate, a copper inductor is manufactured in a second level that is vertically above the first level, and a capacitor is manufactured in a third level that is vertically above the second level. The capacitor may have aluminum plates or a portion of the copper inductor may serve as one of its plates.
1. A method for manufacturing a semiconductor component, comprising:
providing a substrate, wherein providing the substrate includes forming a resistor from or above the substrate;
forming a capacitor at a first level above the substrate by:
forming a first layer of dielectric material over the substrate;
forming a first layer of conductive material over the first layer of dielectric material, the first layer of conductive material comprising aluminum and having first and second portions;
forming a second layer dielectric material over the first layer of conductive material; and
forming a second layer of conductive material over the second layer of dielectric material, the second layer of conductive material comprising aluminum; and
forming an inductor at a second level above the first level by:
forming a third layer of dielectric material over the second layer of conductive material;
forming at least one damascene opening in the third layer of dielectric material by:
forming a fourth layer of dielectric material on the third layer of dielectric material;
forming a first portion of the at least one damascene opening in the third layer of dielectric material; and
forming a second portion of the at least one damascene opening in the fourth layer of dielectric material, wherein the second portion of the at least one damascene opening exposes a portion of the second layer of conductive material;
forming copper in the at least one damascene opening and further including:
forming an active device from the substrate;
forming an opening in the first layer of dielectric material, the opening exposing the active device;
forming an electrical conductor in the opening;
forming the second portion of the first layer of conductive material on the conductor;
electrically isolating the first portion of the first layer of conductive material from the second portion of the first layer of conductive material; and
forming a trench through the second, third and fourth layers of dielectric material, the trench exposing the second portion of the first layer of conductive material.
2. The method of claim 1 , further including forming a conductive material in the trench.
3. The method of claim 2 , wherein forming the conductive material in the trench includes forming copper in the trench.
4. The method of claim 3 , further including forming aluminum over the copper in the trench.