Method and system for high-speed precise laser trimming and scan lens for use therein

1. A method of high-speed, laser-based, precise laser trimming at least one electrical element having at least one measurable property, the at least one element being supported on a substrate, the method comprising:

generating a pulsed laser output with a laser, the output having one or more laser pulses at a repetition rate, each laser pulse has a pulse energy, a laser wavelength within a range of laser wavelengths, and a pulse duration; and

selectively irradiating the at least one electrical element with the one or more laser pulses focused into at least one spot having a non-uniform intensity profile along a direction and a spot diameter less than about 15 microns so as to cause the one or more laser pulses having the wavelength, energy, pulse duration and the spot diameter to selectively remove material from the at least one element and laser trim the at least one element along a trim path while avoiding substantial microcracking within the at least one element, the wavelength being short enough to produce desired short-wavelength benefits of small spot size, tight tolerance, high absorption and reduced or eliminated heat-affected zone (HAZ) along the trim path, but not so short so as to cause microcracking.

2. The method as claimed in claim 1 , wherein focused pulsed laser output power corresponds to about 10-50 mw with a spot diameter of less than about 15 μm, the power being scalable with reduced spot sizes less than about 15 μm such that corresponding power density is high enough to trim the element but sufficiently low to avoid microcracking.

3. The method as claimed in claim 1 , wherein any microcracking obtained as a result of removing material from at least a first portion of the at least one element is insubstantial compared to microcracking obtained upon removing material from the at least one element, or from a portion of a second element, using at least one other wavelength outside the range of laser wavelengths.

4. The method as claimed in claim 1 , wherein the removal of material from the at least one element creates a trim cut with a kerf width corresponding to the spot.

5. The method as claimed in claim 1 , wherein the step of selectively irradiating with the one or more laser pulses is carried out to at least limit formation of the heat-affected zone.

6. The method as claimed in claim 1 , wherein the repetition rate is at least 10 Kilohertz.

7. The method as claimed in claim 1 , wherein at least one laser pulse of the laser output has a picosecond or femtosecond pulse width.

8. The method as claimed in claim 1 , wherein an array of thin film electrical elements are trimmed, and wherein the method further comprises:

selectively micromachining one element in the array to vary a value of a measurable property; and

suspending the step of selectively micromachining, and while the step of selectively micromachining is suspended, selectively micromachining at least one other element in the array to vary a value of a measurable property, the method further comprising resuming the suspended step of selectively micromachining to vary a measurable property of the one element until its value is within a desired range.

9. The method as claimed in claim 8 , wherein the at least one element includes a resistor and wherein the at least one measurable property is at least one of resistance and temperature.

10. The method as claimed in claim 8 further comprising suspending micromachining when a measurement of the at least one measurable property is within a predetermined range.

11. The method as claimed in claim 1 , wherein the laser is a fast rise/fall, pulse-shaped q-switched laser.

12. The method as claimed in claim 1 , wherein the laser is a picosecond or femtosecond laser.

13. The method as claimed in claim 1 , further comprising the step of spatially shaping the one or more laser pulses to form one or more spatially-shaped laser pulses which are focused into the at least one spot.

14. The method as claimed in claim 12 , wherein the optical subsystem includes at least one dispersion-compensated optical element.

15. The method as claimed in claim 1 , wherein TCR drift after trimming is less than about 5 ppm.

16. A method of high-speed, laser-based, precise laser trimming at least one electrical element having at least one measurable property, the at least one element being supported on a substrate, the method comprising:

generating a pulsed laser output with a laser, the output having one or more laser pulses at a repetition rate, each laser pulse has a pulse energy, a laser wavelength within a range of laser wavelengths, and a pulse duration; and

selectively irradiating the at least one electrical element with the one or more laser pulses focused into at least one spot having a non-uniform intensity profile along a direction and a spot diameter less than about 15 microns so as to cause the one or more laser pulses having the wavelength, energy, pulse duration and the spot diameter to selectively remove material from the at least one element and laser trim the at least one element along a trim path while avoiding substantial microcracking within the at least one element, the temporal characteristics of the one or more laser pulses producing desired benefits of small kerf size, tight tolerance, and reduced or eliminated heat-affected zone (HAZ) along the trim path.

17. The method as claimed in claim 16 , wherein a temporal characteristic of the one or more laser pulses includes a substantially square pulse shape, fast rise and fall times, and a pulse duration of less than about 30 nsec.

18. The method as claimed in claim 16 , wherein the pulse duration is in either the femtosecond or picosecond range.

19. The method as claimed in claim 16 , wherein the laser wavelength is a visible or near IR wavelength.