Total ionizing dose suppression transistor architecture
View Patent ↗A total ionizing dose suppression architecture for a transistor and a transistor circuit uses an “end cap” metal structure that is connected to the lowest potential voltage to overcome the tendency of negative charge buildup during exposure to ionizing radiation. The suppression architecture uses the field established by coupling the metal structure to the lowest potential voltage to steer the charge away from the critical field (inter-device) and keeps non-local charge from migrating to the “birds-beak” region of the transistor, preventing further charge buildup. The “end cap” structure seals off the “birds-beak” region and isolates the critical area. The critical area charge is source starved of an outside charge. Outside charge migrating close to the induced field is repelled away from the critical region. The architecture is further extended to suppress leakage current between adjacent wells biased to differential potentials.
1. A radiation-hardened integrated circuit, comprising:
an N-channel transistor having a first metal region directly disposed on a top surface thereof overlapping the boundary of an active region and completely surrounding each of the ends of a gate that extends beyond the border of the active region;
a P-channel transistor in a lightly doped well; and
a second metal region interposed between the N-channel transistor and the P-channel transistor coupled to ground or to the lowest potential in the integrated circuit to prevent leakage current due to ionizing radiation.
2. A radiation-hardened integrated circuit, comprising:
an N-channel transistor in a lightly doped P-type well having a first metal region directly disposed on a top surface thereof overlapping the boundary of an active region and completely surrounding each of the ends of a gate that extends beyond the border of the active region;
a P-channel transistor in a lightly doped N-type well; and
a second metal region interposed between the N-channel transistor and the P-channel transistor coupled to ground or to the lowest potential in the integrated circuit to prevent leakage current due to ionizing radiation.
3. A radiation-hardened integrated circuit as in claim 2 , comprising:
a plurality of N-channel transistors in P-type wells; and
a plurality of P-channel transistors in N-type wells.