Semiconductor device having EMI shielding and method therefor
View Patent ↗A semiconductor device has a substrate having a plurality of metal layers. A die is coupled to the substrate. A plurality of metal wires is provided. At least one end of each of the metal wires is electrically coupled to at least one metal layer. A mold compound is used to encapsulate the die, a first surface of the substrate, and the plurality of metal wires. A portion of at least one metal wire remains exposed. A conductive coating is applied to the mold compound and to the portion of the at least one metal wire exposed.
1. A semiconductor device comprising:
a substrate having a plurality of metal layers;
a die coupled to a first surface of the substrate;
a plurality of metal shielding wires, wherein both ends of each of the metal shielding wires are directly attached to at least one metal layer formed on the first surface of the substrate to form a loop, a first set of the metal shielding wires positioned around an outer perimeter of the substrate, wherein both ends of at least two of the metal shielding wires are directly attached to one metal layer formed on the first surface of the substrate to form a loop;
a mold compound having approximately planer top and side surfaces for encapsulating the die, a first surface of the substrate, and the plurality of metal shielding wires wherein a portion of the loop of the first set of metal shielding wires is exposed through the top surface of the mold compound; and
a conductive coating applied to the top surface of the mold compound and to the exposed loop portion of the first set of metal shielding wires.
2. A semiconductor device in accordance with claim 1 wherein a second set of the metal shielding wires having both ends coupled to at least one metal layer to form a loop is positioned around a perimeter of the die, a portion of the loop of each of the second set of the metal shielding wires exposed and coupled to the conductive coating.
3. A semiconductor device in accordance with claim 1 wherein the loops of the first set of metal shielding wires runs approximately parallel to outer edges of the semiconductor device.
4. A semiconductor device in accordance with claim 2 wherein each loop of the first set of metal shielding wires overlaps at least one adjacent loop of the first set of metal shielding wires so that at least one end of a metal shielding wire of the first set is positioned between both ends of an adjacent a metal shielding wire of the first set, wherein each loop of the first set of metal shielding wires is approximately a same height.
5. A semiconductor device in accordance with claim 1 wherein the conductive coating is a conformal coating.
6. A semiconductor device comprising:
a substrate having a plurality of metal layers;
a die coupled to a first surface of the substrate;
a mold compound having a top surface and side surfaces approximately perpendicular to the top surface for encapsulating the die and a first surface of the substrate;
means for minimizing Electro-Magnetic Interference (EMI) radiation coupled to the top surface of the mold compound; and
means for coupling the means for minimizing EMI radiation to at least one of the plurality of metal layers formed on the first surface of the substrate positioned around an outer perimeter of the substrate, wherein the means for coupling has both ends of at least two of metal shielding wires directly attached to one metal layer formed on the first surface of the substrate to form loops and a top section of each loop attached to the means for minimizing EMI radiation.
7. A semiconductor device in accordance with claim 6 wherein the means for coupling are a plurality of metal shielding wires, wherein a first end and a second end of each of the metal shielding wires is directly attached to at least one metal layer formed on the first surface of the substrate to form a loop and a top section of the loop is coupled to the means for minimizing EMI radiation.
8. A semiconductor device comprising:
a substrate;
a die electrically coupled to a first surface of the substrate;
a plurality of conductive devices electrically attached to at least one metal trace on the first surface of the substrate, and positioned around an outer perimeter of the substrate;
a mold compound having a top surface and side surfaces for encapsulating the semiconductor device, wherein a portion of the at least one conductive device extends through the top surface of the mold compound; and
a conductive coating applied to the top surface of the mold compound and to the exposed portion of the at least one conductive device;
wherein at least two of the conductive devices have both a first end and a second end directly attached to one metal layer formed on the first surface of the substrate to form loops and a top section of the loops are attached to the conductive coating.
9. A semiconductor device in accordance with claim 8 wherein the at least one conductive device is a metal shielding wire.
10. A semiconductor device in accordance with claim 9 wherein both ends of the metal shielding wire are directly attached to at least one metal trace to form a loop, a portion of the loop exposed and coupled to the conductive coating.
11. A semiconductor device in accordance with claim 10 wherein the loop of the metal shielding wire runs approximately parallel to outer edges of the semiconductor device.