APPARATUS AND METHOD FOR PROCESSING A HYDROPHOBIC SURFACE OF A SUBSTRATE
A method of processing a substrate comprising a) supporting a substrate having a hydrophilic surface in a substantially horizontal orientation, b) rotating the substrate, c) applying a film of an aqueous solution of HF to the hydrophilic surface of the substrate for a period of time sufficient to convert the hydrophilic surface into a hydrophobic surface, wherein the concentration of HF is between about 0.1% to about 0.5% by weight of HF in water and the period of time is between about 100 and about 300 seconds, d) applying DI water to the hydrophobic surface of the substrate, and e) applying a drying fluid to the hydrophobic surface of the substrate so as to substantially dry the hydrophobic surface. The invention also is an apparatus for processing a substrate comprising a chamber having at least one wall, a rotary support member located within the chamber for supporting the substrate in a substantially horizontal position and adapted to rotate the substrate, and a first exhaust exit located within the at least one wall, wherein the first exhaust exit is tangential to a rotational direction of the substrate.
1 . A method of processing a substrate comprising:
a) supporting a substrate having a hydrophilic surface in a substantially horizontal orientation;
b) rotating the substrate;
c) applying a film of an aqueous solution of HF to the hydrophilic surface of the substrate for a period of time sufficient to convert the hydrophilic surface into a hydrophobic surface, wherein the concentration of HF is between about 0.1% to about 0.5% by weight of HF in water and the period of time is between about 100 and about 300 seconds;
d) applying DI water to the hydrophobic surface of the substrate; and
e) applying a drying fluid to the hydrophobic surface of the substrate so as to substantially dry the hydrophobic surface.
2 . The method of claim 1 wherein the substrate is rotated at a substantially constant rotational speed during completion of steps c) through e), wherein the rotational speed is less than 400 rpm.
3 . The method of claim 2 wherein the rotational speed is less than about 200 rpm.
4 . The method of claim 1 , wherein the DI water is degassed.
5 . The method of claim 1 wherein step d) comprises applying the film of DI water to the hydrophobic surface of the substrate for between about 5 to about 20 seconds.
6 . The method of claim 1 wherein the drying fluid is N 2 /IPA vapor.
7 . The method of claim 6 wherein the drying fluid is coupled to a drying source comprising a first bubbler and a second bubbler, wherein the second bubbler is sequentially and operably aligned to the first bubbler, the first bubbler generating N 2 /IPA vapor having a first IPA concentration and coupled to the second bubbler, the second bubbler generating N 2 /IPA vapor having an elevated IPA concentration greater than the first IPA concentration, and wherein the drying fluid comprises the elevated IPA concentration.
8 . The method of claim 1 wherein the chamber comprises an exhaust positioned in a substantially tangential position relative to a horizontal edge of the substrate.
9 . The method of claim 8 wherein airflow velocity within the chamber is between about 250 and about 280 au.
10 . A method of processing a substrate comprising:
a) supporting a substrate having a hydrophilic surface in a substantially horizontal orientation;
b) rotating the substrate about a center point at a rotational speed selected to minimize particle addition on the substrate;
c) applying a film of an aqueous solution of HF having a concentration of HF to the hydrophobic surface of the substrate for a period of time, wherein the concentration of HF and the period of time are selected so that the hydrophilic surface is converted into a hydrophobic surface;
d) applying DI water to the hydrophobic surface of the substrate; and
e) applying a drying fluid to the hydrophobic surface of the substrate so as to substantially dry the hydrophobic surface, the drying fluid coupled to a drying source comprising a first bubbler and a second bubbler, wherein the second bubbler is sequentially and operably aligned to the first bubbler, the first bubbler generating N 2 /IPA vapor having a first IPA concentration and coupled to the second bubbler, the second bubbler generating N 2 /IPA vapor having an elevated IPA concentration greater than the first IPA concentration, and wherein the drying fluid comprises the elevated IPA concentration.
11 . The method of claim 10 wherein the substrate is rotated at a substantially constant rotational speed during completion of steps c) through e), and wherein the rotational speed is less than 400 rpm.
12 . The method of claim 10 wherein the period of time is between about 100 and about 300 seconds.
13 . The method of claim 10 wherein the concentration of HF is between about 0.1% to about 0.5% by weight of HF in water.
14 . The method of claim 10 wherein the DI water is degassed DI water and wherein step d) comprises applying the film of DI water to the hydrophobic surface of the substrate for between about 5 to about 20 seconds.
15 . The method of claim 10 wherein the chamber comprises an exhaust positioned in a substantially tangential position relative to a horizontal edge of the substrate, the exhaust configured to maintain a substantially even distribution of airflow within the chamber, where airflow velocity is between about 250 and about 280 au.
16 . The method of claim 10 further comprising positioning an assembly comprising a first dispenser, a second dispenser, and a third dispenser above the surface of the substrate, the first dispenser operably coupled to a source of DI water and the second and third dispensers operably coupled to a source of drying fluid, the second and third dispensers positioned on the assembly adjacent one another and spaced from the first dispenser, the second dispenser having a larger opening than the third dispenser, and the second dispenser being located between the third dispenser and the first dispenser.
17 . An apparatus for processing a substrate comprising:
a chamber having at least one wall;
a rotary support member located within the chamber for supporting the substrate in a substantially horizontal position and adapted to rotate the substrate; and
a first exhaust exit located within the at least one wall, wherein the first exhaust exit is tangential to a rotational direction of the substrate.
18 . The apparatus of claim 17 further comprising a second exhaust exit, wherein the second exhaust exit is parallel to the axis of rotation of the substrate.
19 . The apparatus of claim 17 further comprising a second exhaust exit, wherein the first exhaust exit and the second exhaust exit are tangential to the rotational direction of the substrate.
20 . The apparatus of claim 17 wherein the first exhaust exit is free of baffles.