Direct metallization of electrically non-conductive polyimide substrate surfaces
View Patent ↗The present invention relates to an improved method for the direct metallization of non-conductive substrate surfaces, in particular polyimide surfaces, that is characterized by the process steps of etching the substrate surface with an acidic etching solution that contains peroxide; contacting the etched substrate surface with an acidic treatment solution that contains permanganate; activating the treated substrate surface in an acidic activation solution that contains peroxide; contacting the activated substrate surface with an acidic catalytic solution that contains at least a thiophene derivate and at least a sulfonic acid derivate; metallization of the thus treated substrate surface in an acidic galvanic metallization bath.
1. A method for the direct metallization of a non-conductive substrate surface, the method comprising the following steps in order:
(1) etching the substrate surface with an acidic etchant solution comprising a first peroxide;
(2) contacting the etched substrate surface with an acidic treatment solution comprising a permanganate which contact yields a treated substrate surface comprising manganese dioxide thereon;
(3) activating the treated substrate surface in an acidic activator solution comprising a second peroxide;
(4) contacting the activated substrate surface with an acidic catalytic solution comprising a thiophene derivative and a sulfonic acid derivative wherein the manganese dioxide on the substrate surface catalyzes the polymerization of the thiophene derivative into a thiophene polymer; and
(5) metallizing by electrolytic plating the thus treated substrate surface in an acidic electrolytic metallization bath.
2. A method according to claim 1 , wherein the non-conductive substrate surface is a polyimide surface.
3. A method according to claim 1 , further comprising rinsing the substrate surface between the individual method steps.
4. A method according to claim 1 , wherein the first peroxide is present in the etchant solution in a concentration between about 30 g/L and about 120 g/L, and the etchant solution further comprises an acid selected from the group consisting of sulfuric acid, methane sulfonic acid, methane disulfonic acid, phenolsulfuric acid, phosphoric acid, and combinations thereof.
5. A method according to claim 1 , wherein the first peroxide is present in the etchant solution in a concentration between about 80 g/L to about 120 g/L, and the etchant solution further comprises an acid selected from the group consisting of sulfuric acid, methane sulfonic acid, methane disulfonic acid, phenolsulfuric acid, phosphoric acid, and combinations thereof.
6. A method according to claim 1 , wherein the permanganate is present in the acidic treatment solution in a concentration between about 30 g/L and about 60 g/L, and the acidic treatment solution further comprises an acid selected from the group consisting of hydrochloric acid, sulfuric acid, phosphoric acid, methane sulfonic acid, methane disulfonic acid, and combinations thereof.
7. A method according to claim 6 , wherein the acidic treatment solution has a pH of less than about pH 5.
8. A method according to claim 7 , wherein the pH is less than about pH 3.
9. A method according to claim 7 , wherein the pH is about pH 2.
10. A method according to claim 1 , wherein the second peroxide is present in the activator solution in a concentration between about 30 g/L and about 120 g/L, and the activator solution further comprises an acid selected from the group consisting of sulfuric acid, methane sulfonic acid, methane disulfonic acid, phenolsulfuric acid, phosphoric acid, and combinations thereof.
11. A method according to claim 1 , wherein the second peroxide is present in the activator solution in a concentration between about 80 g/L to about 120 g/L, and the activator solution further comprises an acid selected from the group consisting of sulfuric acid, methane sulfonic acid, methane disulfonic acid, phenolsulfuric acid, phosphoric acid, and combinations thereof.
12. A method according to claim 10 , wherein the activator solution is identical to the etchant solution with respect to the composition thereof.
13. A method according to claim 1 , wherein the activation is carried out with ultrasonic agitation.
14. A method according to claim 1 , wherein the thiophene derivative comprises a 3,4-alkylenedioxythiophene and the sulfonic acid derivative comprises styrene sulfonic acid.
15. A method according to claim 1 , wherein after the treatment with the acidic catalytic solution, the substrate surface is contacted with an acidic rinsing solution.
16. A method according to claim 1 , wherein the acidic electrolytic metallization bath comprises an acidic electrolytic copper metallization bath .
17. A method for the direct metallization of a non-conductive polyimide-based substrate surface, the method comprising the following steps in order:
(1) etching the substrate surface at a temperature between about 20 and about 25° C. with an acidic etchant solution comprising a first peroxide;
(2) contacting the etched substrate surface with an acidic treatment solution comprising a permanganate which contact yields a treated substrate surface comprising manganese dioxide thereon;
(3) activating the treated substrate surface at a temperature between about 20 and about 25° C. in an acidic activator solution comprising a second peroxide;
(4) contacting the activated substrate surface with an acidic catalytic solution comprising 3,4-ethylenedioxythiophene and styrene sulfonic acid at a temperature between about 20 and about 25° C. wherein the manganese dioxide on the substrate surface catalyzes the polymerization of the 3,4-ethylenedioxythiophene into a thiophene polymer; and
(5) metallizing by electrolytic plating the thus treated substrate surface in an acidic electrolytic metallization bath.
18. The method of claim 17 wherein the first peroxide in step 1 is a peroxysulfuric acid or salt thereof in a concentration between about 30 g/L and about 120 g/L and the second peroxide in step (3) is a peroxysulfuric acid or salt thereof in a concentration between about 30 g/L and about 120 g/L.
19. A method for the direct metallization of a non-conductive polyimide-based substrate surface, the method comprising the following steps in order:
(1) etching the substrate surface at a temperature between about 20 and about 25° C. with an acidic etchant solution comprising between about 30 g/L and about 120 g/L peroxysulfuric acid or salt thereof, and the etchant solution further comprises an acid selected from the group consisting of sulfuric acid, methane sulfonic acid, methane disulfonic acid, phenolsulfuric acid, phosphoric acid, and combinations thereof;
(2) contacting the etched substrate surface with an acidic treatment solution comprising a permanganate which contact yields a treated substrate surface comprising manganese dioxide thereon;
(3) activating the treated substrate surface at a temperature between about 20 and about 25° C. in an acidic activator solution comprising between about 30 g/L and about 120 g/L peroxysulfuric acid or salt thereof, and the activator solution further comprises an acid selected from the group consisting of sulfuric acid, methane sulfonic acid, methane disulfonic acid, phenolsulfuric acid, phosphoric acid, and combinations thereof;
(4) contacting the activated substrate surface with an acidic catalytic solution comprising 3,4-ethylenedioxythiophene and styrene sulfonic acid at a temperature between about 20 and about 25° C. wherein the manganese dioxide on the substrate surface catalyzes the polymerization of the 3,4-ethylenedioxythiophene into a thiophene polymer; and
(5) metallizing by electrolytic plating the thus treated substrate surface in an acidic electrolytic metallization bath.