Integrated circuit having contact including material between sidewalls

1. An integrated circuit comprising:

a bottom electrode;

a top electrode;

resistivity changing material between the bottom electrode and the top electrode;

a contact contacting the top electrode, the contact including a bottom and sidewalls; and

first material between the sidewalls of the contact,

wherein the first material comprises dielectric material.

2. The integrated circuit of claim 1 , wherein the contact comprises a cup-shaped contact.

3. The integrated circuit of claim 2 , wherein the cup-shaped contact has a circular cross-section.

4. The integrated circuit of claim 2 , wherein the cup-shaped contact has an oblong cross-section.

5. The integrated circuit of claim 1 , wherein the contact comprises a U-shaped contact.

6. The integrated circuit of claim 1 , wherein the resistivity changing material comprises a phase change material.

7. An integrated circuit comprising:

a bottom electrode;

a top electrode;

resistivity changing material between the bottom electrode and the top electrode;

a contact contacting the top electrode, the contact including a bottom and sidewalls; and

first material between the sidewalls of the contact,

wherein the first material comprises semiconducting material.

8. The integrated circuit of claim 7 , wherein the contact comprises a cup-shaped contact.

9. The integrated circuit of claim 8 , wherein the cup-shaped contact has a circular cross-section.

10. The integrated circuit of claim 8 , wherein the cup-shaped contact has an oblong cross-section.

11. The integrated circuit of claim 7 , wherein the contact comprises a U-shaped contact.

12. The integrated circuit of claim 7 , wherein the resistivity changing material comprises a phase change material.

13. A system comprising:

a host; and

a memory device communicatively coupled to the host, the memory device including a plurality of memory cells, each memory cell comprising:

a bottom electrode;

a top electrode;

phase change material between the bottom electrode and the top electrode;

a contact contacting the top electrode, the contact including a bottom and sidewalls; and

first material between the sidewalls of the contact,

wherein the first material comprises dielectric material.

14. The system of claim 13 , wherein each contact comprises a cup-shaped contact.

15. The system of claim 14 , wherein each cup-shaped contact has a circular cross-section.

16. The system of claim 14 , wherein each cup-shaped contact has an oblong cross-section.

17. The system of claim 13 , wherein each contact comprises a U-shaped contact.

18. The system of claim 13 , wherein the memory device further comprises:

an access device coupled to the bottom electrode.

19. The system of claim 13 , wherein the memory device further comprises:

a sense circuit configured to read data stored in the phase change material;

a write circuit configured to write data to the phase change material; and

a controller configured to control the sense circuit and the write circuit.

20. A system comprising:

a host; and

a memory device communicatively coupled to the host, the memory device including a plurality of memory cells, each memory cell comprising:

a bottom electrode;

a top electrode;

phase change material between the bottom electrode and the top electrode;

a contact contacting the top electrode, the contact including a bottom and sidewalls; and

first material between the sidewalls of the contact,

wherein the first material comprises semiconducting material.

21. The system of claim 20 , wherein each contact comprises a cup-shaped contact.

22. The system of claim 21 , wherein each cup-shaped contact has a circular cross-section.

23. The system of claim 21 , wherein each cup-shaped contact has an oblong cross-section.

24. The system of claim 20 , wherein each contact comprises a U-shaped contact.

25. The system of claim 20 , wherein the memory device further comprises:

an access device coupled to the bottom electrode.

26. The system of claim 20 , wherein the memory device further comprises:

a sense circuit configured to read data stored in the phase change material;

a write circuit configured to write data to the phase change material; and

a controller configured to control the sense circuit and the write circuit.

27. A memory comprising:

a first bottom electrode;

a first top electrode;

first phase change material between the first bottom electrode and the first top electrode;

a second bottom electrode;

a second top electrode;

second phase change material between the second bottom electrode and the second top electrode;

a contact contacting the first top electrode and the second top electrode, the contact including a bottom and sidewalls extending between the first top electrode and the second top electrode; and

first material between the sidewalls of the contact,

wherein the first material comprises one of dielectric material and semiconducting material.

28. The memory of claim 27 , wherein a cross-sectional width of the first phase change material is greater than a cross-sectional width of the first bottom electrode.

29. The memory of claim 27 , wherein a cross-sectional width of the first phase change material is less than a cross-sectional width of the first bottom electrode.

30. The memory of claim 27 , wherein the first phase change material comprises a tapered portion.

31. The memory of claim 27 , wherein the contact is centered over the first top electrode and the second top electrode.