Memory having shared storage material
View Patent ↗An integrated circuit includes a bit line, a plurality of access devices coupled to the bit line, and a plate of phase change material. The integrated circuit includes a plurality of phase change elements contacting the plate of phase change material and a plurality of first contacts. Each first contact is coupled between an access device and a phase change element.
1. An integrated circuit comprising:
a bit line;
a plurality of access devices electrically coupled to the bit line;
a plate of phase change material;
a plurality of phase change elements arranged in at least two rows and in a least two columns, each phase change element laterally surrounded by insulation material and directly contacting the plate of phase change material; and
a plurality of first contacts arranged in the at least two rows and in the at least two columns, each first contact electrically coupled between an access device and a phase change element,
wherein the plate of phase change material extends over the plurality of first contacts.
2. The integrated circuit of claim 1 , wherein each phase change element is defined by a via formed in the insulation material.
3. The integrated circuit of claim 1 , further comprising:
a plurality of heater contacts, each heater contact electrically coupled between a phase change element and a first contact.
4. The integrated circuit of claim 1 , wherein each access device comprises a transistor.
5. The integrated circuit of claim 1 , wherein the plate of phase change material and the plurality of phase change elements comprise at least one of Ge, Sb, Te, Ga, As, In, Se, and S.
6. The integrated circuit of claim 1 , wherein each first contact comprises a metal contact.
7. The integrated circuit of claim 1 , wherein the bit line is not a straight line.
8. The integrated circuit of claim 1 , wherein the plate of phase change material comprises indentations above each phase change element.
9. The integrated circuit of claim 2 , wherein each phase change element comprises tapered sidewalls defined by the via.
10. The integrated circuit of claim 3 , wherein each heater contact is cup shaped.
11. An integrated circuit comprising:
a bit line;
a plurality of access devices, a first side of each access device electrically coupled to the bit line;
a plate of phase change material;
a plurality of phase change elements contacting the plate of phase change material, each phase change element laterally surrounded by insulation material; and
a plurality of first contacts, each first contact electrically coupled between a second side of each access device opposite the first side and a phase change element.
12. The integrated circuit of claim 11 , further comprising:
a plurality of heater contacts, each heater contact electrically coupled between a phase change element and a first contact.
13. An integrated circuit comprising:
a bit line;
a plurality of access devices, a first side of each access device electrically coupled to the bit line;
a plate of phase change material;
a plurality of phase change elements contacting the plate of phase change material, the plurality of phase change elements arranged in at least two rows and in at least two columns, and each phase change element laterally surrounded by insulation material; and
a plurality of electrodes, each electrode electrically coupled between a second side of each access device opposite the first side and a phase change element.
14. The integrated circuit of claim 13 , wherein each phase change element is defined by a via formed in the insulation material.
15. The integrated circuit of claim 13 , further comprising:
a plurality of heater contacts, each heater contact electrically coupled between a phase change element and an electrode.
16. The integrated circuit of claim 13 , wherein each access device comprises a transistor.
17. The integrated circuit of claim 13 , wherein the plate of phase change material and the plurality of phase change elements comprise at least one of Ge, Sb, Te, Ga, As, In, Se, and S.
18. The integrated circuit of claim 13 , wherein each electrode comprises a metal electrode.
19. The integrated circuit of claim 13 , wherein the bit line is not a straight line.
20. The integrated circuit of claim 13 , wherein the plate of phase change material comprises indentations above each phase change element.
21. The integrated circuit of claim 14 , wherein each phase change element comprises tapered sidewalls defined by the via.
22. The integrated circuit of claim 15 , wherein each electrode comprises a first metal, and
wherein each heater contact comprises a second metal different from the first metal.
23. The integrated circuit of claim 15 , wherein each heater contact is cup shaped.