Miniaturized wide-band baluns for RF applications
View Patent ↗A wide-band balun device includes a first metallization deposited over a substrate and oriented in a first coil. The first coil extends horizontally across the substrate while maintaining a substantially flat vertical profile. A second metallization is deposited over the substrate and oriented in a second coil. The second coil is magnetically coupled to the first coil and a portion of the second coil oriented interiorly of the first coil. A third metallization is deposited over the substrate and oriented in a third coil. The third coil is magnetically coupled to the first and second coils. A first portion of the third coil is oriented interiorly of the second coil. The third coil has a balanced port connected to the third coil between secondhand third portions of the third coil.
1. A wide-band balun device, comprising:
a first tube, deposited over a substrate, and configured in a first coil extending horizontally across the substrate while maintaining a substantially flat vertical profile;
a second tube, deposited over the substrate, and configured in a second coil magnetically coupled to the first coil, wherein a portion of the second coil is oriented interiorly of the first coil; and
a third tube, deposited over the substrate, and configured in a third coil magnetically coupled to the first and second coils, wherein a first portion of the third coil is oriented interiorly of the second coil, the third coil having a balanced port connected to the third coil between second and third portions of the third coil.
2. The balun device of claim 1 , wherein the substrate includes a silicon, glass, or ceramic substrate for structural support.
3. The balun device of claim 1 , wherein the first coil is oriented in an octagonal geometric shape.
4. The balun device of claim 1 , wherein the first tube has a rectangular cross-section or round cross-section.
5. The balun device of claim 1 , further including a first capacitor device, deposited over the substrate, and coupled between the unbalanced port and the first coil.
6. The balun device of claim 1 , wherein the second coil is coupled to ground at a center tap.
7. The balun device of claim 5 , further including second and third capacitor devices, deposited over the substrate, and connected between the first and second portions of the third coil and ground.
8. The balun device of claim 1 , wherein the first coil is copper (Cu) or a copper alloy material.
9. A balun device, comprising:
a first coil deposited over a substrate, the first coil extending horizontally across the substrate while maintaining a substantially flat vertical profile;
a second coil deposited over the substrate and magnetically coupled to the first coil, wherein a portion of the second coil is oriented interiorly of the first coil;
a third coil deposited over the substrate and magnetically coupled to the first and second coils, wherein a first portion of the third coil is oriented interiorly of the second coil, the third coil having a balanced port connected to the third coil between second and third portions of the third coil; and
first and second capacitors, deposited over the substrate, and connected between the first and second portions of the third coil and ground.
10. The balun device of claim 9 , further including a balanced port coupled to the first and second portions of the third coil.
11. The balun device of claim 9 , further including a third capacitor, deposited over the substrate, and coupled between a first end of the first coil and an unbalanced port.
12. The balun device of claim 11 , further including a fourth capacitor, deposited over the substrate, and coupled between an output terminal of the third capacitor and ground.
13. The balun device of claim 9 , wherein the substrate includes a silicon, glass, or ceramic substrate for structural support.
14. The balun device of claim 9 , wherein the first coil is configured over the substrate in two interconnected groups.
15. The balun device of claim 9 , wherein the second coil is coupled to ground at a center tap.
16. A balun for a semiconductor device, comprising:
a first metallization, deposited over a substrate, and oriented in a first coil, the first coil extending horizontally across the substrate while maintaining a substantially flat vertical profile;
a second metallization, deposited over the substrate, and oriented in a second coil, the second coil magnetically coupled to the first coil, wherein a portion of the second coil is oriented interiorly of the first coil; and
a third metallization, deposited over the substrate, and oriented in a third coil, the third coil magnetically coupled to the first and second coils, wherein a first portion of the third coil is oriented interiorly of the second coil, the third coil having a balanced port connected to the third coil between second and third portions of the third coil.
17. The balun of claim 16 , wherein the substrate includes a silicon, glass, or ceramic substrate for structural support.
18. The balun of claim 17 , wherein the coil structure comprises a portion of a semiconductor device.
19. The balun of claim 16 , wherein the first metallization has a rectangular or round cross-section.
20. The balun of claim 16 , further including first and second capacitors, deposited over the substrate, and connected between the second and third portions of the third coil and ground.
21. The balun of claim 20 , further including a third capacitor, deposited over the substrate, and coupled between a first end of the first coil and an unbalanced port.
22. The balun of claim 21 , further including a fourth capacitor, deposited over the substrate, and coupled between an output terminal of the third capacitor and ground.
23. The balun of claim 16 , wherein the first coil is configured over the substrate in two interconnected groups.
24. A method of manufacturing a balun, comprising:
providing a first metallization, deposited over a substrate, and oriented in a first coil, the first coil extending horizontally across the substrate while maintaining a substantially flat vertical profile;
providing a second metallization, deposited over the substrate, and oriented in a second coil, the second coil magnetically coupled to the first coil, wherein a portion of the second coil is oriented interiorly of the first coil; and
providing a third metallization, deposited over the substrate, and oriented in a third coil, the third coil magnetically coupled to the first and second coils, wherein a first portion of the third coil is oriented interiorly of the second coil, the third coil having a balanced port connected to the third coil between second and third portions of the third coil.
25. The method of manufacture of claim 24 , wherein the substrate includes a silicon, glass, or ceramic substrate for structural support.
26. The method of manufacture of claim 25 , wherein the coil structure comprises a portion of a semiconductor device.
27. The method of manufacture of claim 24 , wherein the first metallization has a rectangular or round cross-section.
28. The method of manufacture of claim 24 , further including first and second capacitors, deposited over the substrate, and connected between the second and third portions of the third coil and ground.
29. The method of manufacture of claim 28 , further including a third capacitor, deposited over the substrate, and coupled between a first end of the first coil and an unbalanced port.
30. The method of manufacture of claim 29 , further including a fourth capacitor, deposited over the substrate, and coupled between an output terminal of the third capacitor and ground.
31. The method of manufacture of claim 24 , wherein the first coil is configured over the substrate in two interconnected groups.