Memory device having drift compensated read operation and associated method

1. A memory, comprising:

a memory array;

a read control circuit configured to effectuate a read operation of a memory cell in the array, wherein the read operation contemplates one or more drift conditions associated with the memory cell, and

wherein:

the drift conditions comprise one or more of carrier relaxation of material within the memory cell, slow crystallization of material within the memory cell, mobile carrier density of material within the memory cell, and cycling endurance of the memory cell, or

the read control circuit contemplates the one or more drift conditions by altering one or more of a bit line and word line biasing based on the contemplated one or more drift conditions, or

the read control circuit contemplates the one or more drift conditions by performing a periodic refresh of at least a portion of the memory array after an elapsement of a predetermined time period.

2. The memory of claim 1 , wherein the memory cell comprises a binary state or multi-level phase change memory cell.

3. A memory, comprising:

a memory array;

a drift condition sense system configured to ascertain one or more drift conditions associated with the memory array;

a read control circuit configured to effectuate a read operation of a memory cell in the array based on at least one ascertained drift condition provided by the drift condition sense system; and

wherein:

the memory cell comprises a phase change memory cell, and wherein the read circuit is configured to increase a reference level for one or more increasingly amorphous states when the at least one ascertained drift condition comprises a carrier relaxation of phase change material in the phase change memory cell; or

the memory cell comprises a phase change memory cell, and wherein the read circuit is configured to decrease a reference level for one or more increasingly amorphous states when the at least one ascertained drift condition comprises a slow crystallization of phase change material in the phase change memory cell; or

the memory cell comprises a phase change memory cell, and wherein the read circuit is configured to decrease a reference level for one or more increasingly amorphous states when the at least one ascertained drift condition comprises a number of write cycles associated with a portion of the memory array in which the phase change memory cell resides is greater than a predetermined threshold; or

the memory cell comprises a phase change memory cell, and wherein the read circuit is configured to alter one or more reference levels when the at least one ascertained drift condition comprises both a time period associated with when the phase change memory cell was last programmed, and a temperature associated with the phase change memory cell.

4. The memory of claim 3 , further comprising a read circuit configured to read the memory cell using a particular set of one or more reference sense levels based on the at least one ascertained drift condition.

5. A method of reading a memory cell, comprising:

detecting one or more drift conditions of a memory cell;

setting one or more read reference levels or biasing one or more of a bit line and a word line associated with the memory cell based on the one or more detected drift conditions; and

reading the memory cell using the set one or more read reference levels or the biased bit line and/or word line, and

wherein detecting the one or more drift conditions comprises determining a number of write cycles associated with a portion of a memory array in which the memory cell resides, or

wherein setting the one or more read reference levels comprises altering one or more default read reference levels based on the one or more detected drift conditions, or

further comprising performing a periodic refresh of at least a portion of the memory array after an elapsement of a predetermined time period.

6. The method of claim 5 , wherein detecting the one or more drift conditions comprises sensing a temperature associated with the memory cell.

7. The method of claim 5 , wherein detecting the one or more drift conditions comprises determining a time period associated with when the memory cell was last programmed.

8. A system containing memory, the system comprising:

a memory array;

a read control circuit configured to effectuate a read operation of a memory cell in the array, wherein the read operation contemplates one or more drift conditions associated with the memory cell; and

wherein:

the drift conditions comprise one or more of carrier relaxation of material within the memory cell, slow crystallization of material within the memory cell, mobile carrier density of material within the memory cell, and cycling endurance of the memory cell; or

the read control circuit contemplates the one or more drift conditions by altering reference sense levels associated with a read circuit based on the contemplated one or more drift conditions; or

the read control circuit contemplates the one or more drift conditions by altering one or more of a bit line and word line biasing based on the contemplated one or more drift conditions; or

the read control circuit contemplates the one or more drift conditions by performing a periodic refresh of at least a portion of the memory array after an elapsement of a predetermined time period.

9. The system of claim 8 , wherein the memory cell comprises a binary state or multi-level phase change memory cell.

10. A memory, comprising:

a memory array;

a drift condition sense system configured to ascertain one or more drift conditions associated with the memory array;

a read control circuit configured to effectuate a read operation of a memory cell in the array based on at least one ascertained drift condition provided by the drift condition sense system; and

wherein:

the drift condition sense system comprises one or more counters configured to count a number of write cycles associated with one or more respective portions of the memory array; or

the drift condition sense system comprises a timer configured to ascertain an amount of time since the memory cell was last programmed; or

the read control circuit is further configured to alter one or more of a bit line and word line biasing to effectuate a read operation of a memory cell in the array based on at least one ascertained drift condition provided by the drift condition sense system.