Grooving bumped wafer pre-underfill system

1. A method of forming a semiconductor device, comprising:

providing a bumped wafer;

forming a plurality of grooves in an active surface of the bumped wafer;

disposing a pre-underfill layer over the active surface, filling the plurality of grooves;

laminating a first adhesive layer to the pre-underfill layer, and grinding a back surface of the bumped wafer;

disposing a coating over the back surface of the bumped wafer;

mounting a second adhesive layer to the coating and peeling off the first adhesive layer from the active surface of the bumped wafer, or mounting the second adhesive layer to the first adhesive layer; and

singulating the bumped wafer into a plurality of segments by cutting the bumped wafer along the plurality of grooves.

2. The method of claim 1 , further including, if the second adhesive layer is mounted to the first adhesive layer, using a die attach process to remove a first segment of the plurality of segments from the first adhesive layer.

3. The method of claim 1 , further including, if the second adhesive layer is mounted to the coating, using a chip attach process to remove a first segment of the plurality of segments from the second adhesive layer.

4. The method of claim 1 , wherein the bumped wafer is inverted a first instance to grind the back surface.

5. The method of claim 4 , wherein the bumped wafer is inverted a second instance to peel the first adhesive layer from the active surface of the bumped wafer.

6. The method of claim 1 , wherein the pre-underfill material includes a polyimide (Pi) material or a thermoplastic resin material.

7. The method of claim 1 , wherein the first or second adhesive layer is deposited using a spin coating, screen printing, or lamination method.

8. The method of claim 1 , wherein the coating is deposited using a spin coating, screen printing, or lamination method.

9. A method of manufacturing a semiconductor device, comprising:

providing a bumped wafer having a plurality of grooves formed in an active surface of the bumped wafer;

providing a pre-underfill layer disposed over an active surface, filling the plurality of grooves;

providing a coating disposed over a back surface of the bumped wafer;

providing a first adhesive layer mounted to the pre-underfill layer; and

providing a second adhesive layer mounted to the coating, or mounted to the first adhesive layer.

10. The method of manufacture of claim 9 , wherein the bumped wafer is singulated into a plurality of segments by cutting the bumped wafer along the plurality of grooves.

11. The method of manufacture of claim 10 , wherein if the second adhesive layer is mounted to the first adhesive layer, a die attach process is used to remove a first segment of the plurality of segments from the first adhesive layer.

12. The method of manufacture of claim 10 , wherein if the second adhesive layer is mounted to the coating, a chip attach process is used to remove a first segment of the plurality of segments from the second adhesive layer.

13. The method of manufacture of claim 9 , wherein the pre-underfill material includes a polyimide (Pi) material or a thermoplastic resin material.

14. The method of manufacture of claim 9 , wherein the first or second adhesive layer is deposited using a spin coating, screen printing, or lamination method.

15. The method of manufacture of claim 9 , wherein the coating is deposited using a spin coating, screen printing, or lamination method.

16. A method of forming a semiconductor device, comprising:

providing a wafer having an active surface with a plurality of solder bumps disposed on the active surface and a plurality of grooves formed to a depth in the active surface;

disposing a pre-underfill layer over the active surface, filling the plurality of grooves and partially coating the solder bumps so that about half of each solder bump remains uncoated;

laminating a first adhesive layer to the pre-underfill layer;

grinding a back surface of the bumped wafer to the depth of the plurality of grooves;

disposing a coating over the back surface of the bumped wafer;

mounting a second adhesive layer to the coating;

peeling off the first adhesive layer from the active surface of the bumped wafer;

singulating the bumped wafer into a plurality of segments; and

separating each segment from the second adhesive layer using a die attach process.

17. The method of claim 16 wherein the singulating step further comprises cutting the bumped wafer along each of the grooves so that each cut extends through the pre-underfill layer and the coating.

18. The method of claim 17 wherein each cut extends into a portion of the second adhesive layer.

19. A method of forming a semiconductor device, comprising:

providing a wafer having an active surface with a plurality of solder bumps disposed on the active surface and a plurality of grooves formed to a depth in the active surface;

disposing a pre-underfill layer over the active surface, filling the plurality of grooves and partially coating the solder bumps so that about half of each solder bump remains uncoated;

laminating a first adhesive layer to the pre-underfill layer;

grinding a back surface of the bumped wafer to the depth of the plurality of grooves;

disposing a coating over the back surface of the bumped wafer;

mounting a second adhesive layer to the first adhesive layer;

singulating the bumped wafer into a plurality of segments; and

separating each segment from the first and second adhesive layers using a die attach process.

20. The method of claim 19 wherein the singulating step further comprises cutting the bumped wafer along each of the grooves so that each cut extends through the pre-underfill layer and the coating.

21. The method of claim 20 wherein each cut extends into a portion of the first adhesive layer.