Mushroom phase change memory having a multilayer electrode
View Patent ↗An integrated circuit includes a first electrode including at least two electrode material layers and a resistivity changing material including a first portion and a second portion. The first portion contacts the first electrode and has a same cross-sectional width as the first electrode. The second portion has a greater cross-sectional width than the first portion. The integrated circuit includes a second electrode coupled to the resistivity changing material.
1. An integrated circuit comprising:
a first electrode including at least two electrode material layers;
a resistivity changing material including a first portion and a second portion, the first portion contacting the first electrode and having a same cross-sectional width as the first electrode, the second portion having a greater cross-sectional width than the first portion; and
a second electrode coupled to the resistivity changing material.
2. The integrated circuit of claim 1 , wherein the resistivity changing material includes a third portion laterally surrounding the second electrode.
3. The integrated circuit of claim 1 , wherein the first electrode comprises a first portion and a second portion, the first portion having a greater cross-sectional width than the second portion.
4. The integrated circuit of claim 3 , wherein the first portion of the first electrode is spacer defined.
5. The integrated circuit of claim 1 , wherein the first electrode includes a first electrode material layer comprising one of TiN, TaN, W, Al, Ti, Ta, TiSiN, TaSiN, TiAlN, TaAlN, Cu, WN, Si, Ge, and phase change material and a second electrode material layer comprising one of TiN, TaN, W, Al, Ti, Ta, TiSiN, TaSiN, TiAlN, TaAlN, Cu, WN, and C.
6. The integrated circuit of claim 1 , wherein the first electrode has a sublithographic cross-sectional width.
7. The integrated circuit of claim 1 , wherein the resistivity changing material comprises a phase change material.
8. The integrated circuit of claim 1 , wherein the first electrode includes more than two electrode material layers.
9. A system comprising:
a host; and
a memory device communicatively coupled to the host, the memory device comprising:
a first electrode including multiple electrode material layers;
a phase change material including a first portion and a second portion, the first portion contacting the first electrode and having a same cross-sectional width as the first electrode, the second portion having a greater cross-sectional width than the first portion; and
a second electrode coupled to the phase change material.
10. The system of claim 9 , wherein the phase change material includes a third portion laterally surrounding the second electrode.
11. The system of claim 9 , wherein the first electrode comprises a first portion and a second portion, the first portion having a greater cross-sectional width than the second portion.
12. The system of claim 9 , wherein the first electrode includes a first electrode material layer comprising one of TiN, TaN, W, Al, Ti, Ta, TiSiN, TaSiN, TiAlN, TaAlN, Cu, WN, Si, Ge, and phase change material and a second electrode material layer comprising one of TiN, TaN, W, Al, Ti, Ta, TiSiN, TaSiN, TiAlN, TaAlN, Cu, WN, and C.
13. The system of claim 9 , wherein the first electrode has a sublithographic cross-sectional width.
14. The system of claim 9 , wherein the memory device further comprises:
a write circuit configured to write data to the phase change material;
a sense circuit configured to read data from the phase change material; and
a controller configured to control the write circuit and the sense circuit.