Fin-type field effect transistor structure with merged source/drain silicide and method of forming the structure
View Patent ↗Disclosed herein are embodiments of a multiple fin fin-type field effect transistor (i.e., a multiple fin dual-gate or tri-gate field effect transistor) in which the multiple fins are partially or completely merged by a highly conductive material (e.g., a metal silicide). Merging the fins in this manner allow series resistance to be minimized with little, if any, increase in the parasitic capacitance between the gate and source/drain regions. Merging the semiconductor fins in this manner also allows each of the source/drain regions to be contacted by a single contact via as well as more flexible placement of that contact via.
1. A field effect transistor comprising:
a substrate;
a plurality of semiconductor fins on said substrate,
wherein adjacent semiconductor fins are separated by a space, and
wherein each of said semiconductor fins has a top surface and end regions; and
a conductor that traverses one of said end regions of each of said semiconductor fins and is electrically isolated from other conductors crossing said fins,
wherein said conductor comprises a conductive material that completely fills said space between said adjacent semiconductor fins and is further on said top surface of each of said semiconductor fins,
wherein said conductor comprises a metal silicide.
2. The field effect transistor of claim 1 , wherein said semiconductor fins comprise silicon fins comprising an epitaxial silicon layer on said top surface and sidewalls of said semiconductor fins.
3. The field effect transistor of claim 1 , wherein said plurality of semiconductor fins comprises at least two semiconductor fins.
4. The field effect transistor of claim 1 , where said semiconductor fins are approximately parallel.
5. The field effect transistor of claim 1 , wherein said substrate comprises an isolation layer adjacent to said semiconductor fins.
6. A field effect transistor comprising:
a substrate;
a plurality of semiconductor fins on said substrate,
wherein adjacent semiconductor fins are separated by a space,
wherein each of said semiconductor fins has a top surface, sidewalls, end regions comprising a source region and a drain region, and a center region between said end regions; and
conductors adjacent to said semiconductor fins,
wherein each of said conductors traverses a corresponding one of said end regions of each of said semiconductor fins, and
wherein each of said conductors comprises a conductive material that is within said space extending a width of said space between said sidewalls of said adjacent semiconductor fins and is on said top surface of each of said semiconductor fins;
a gate electrode adjacent to said center region and between said source and drain end regions; and
dielectric spacers adjacent to said semiconductor fins such that said conductors are electrically isolated from said gate electrode.
7. The field effect transistor of claim 6 , wherein said conductive material comprises a metal silicide.
8. The field effect transistor of claim 6 , wherein said semiconductor fins comprise silicon fins comprising an epitaxial silicon layer on said top surface and said sidewalls.
9. The field effect transistor of claim 6 , wherein said plurality of semiconductor fins comprises at least two semiconductor fins.
10. The field effect transistor of claim 6 , where said semiconductor fins are approximately parallel.
11. The field effect transistor of claim 6 , wherein said substrate comprises an isolation layer adjacent to said semiconductor fins.
12. The field effect transistor of claim 6 , wherein each of said conductors one of completely fills said space so that series resistance is minimized, and partially fills said space so that series resistance is tailored.
13. A field effect transistor comprising:
a substrate;
a plurality of semiconductor fins on said substrate,
wherein adjacent semiconductor fins are separated by a space, and
wherein each of said semiconductor fins has a top surface and end regions comprising a source region and a drain region;
a conductor that traverses one of said end regions of each of said semiconductor fins; and
a gate electrode adjacent to a center region between said source and drain end regions of said plurality of semiconductor fins such that said conductor is electrically isolated from said gate electrode,
wherein said conductor comprises a conductive material that extends the width of said space between said sidewalls of said adjacent semiconductor fins and further is on said top surface of each of said semiconductor fins.
14. The field effect transistor of claim 13 , wherein said conductive material comprises a metal silicide.
15. The field effect transistor of claim 13 , wherein said semiconductor fins comprise silicon fins comprising an epitaxial silicon layer on said top surface and sidewalls of said semiconductor fins.
16. The field effect transistor of claim 13 , wherein said plurality of semiconductor fins comprises at least two semiconductor fins.
17. The field effect transistor of claim 13 , where said semiconductor fins are approximately parallel.
18. The field effect transistor of claim 13 , wherein said substrate comprises an isolation layer adjacent to said semiconductor fins.
19. A field effect transistor comprising:
a substrate;
a plurality of semiconductor fins on said substrate,
wherein adjacent semiconductor fins are separated by a space,
wherein each of said semiconductor fins has a top surface, sidewalls, end regions, and a center region between said end regions; and
conductors adjacent to said semiconductor fins,
wherein each of said conductors traverses a corresponding one of said end regions of each of said semiconductor fins, and
wherein each of said conductors comprises a conductive material that is within said space extending a width of said space between said sidewalls of said adjacent semiconductor fins and is on said top surface of each of said semiconductor fins;
a gate electrode adjacent to said center region; and
dielectric spacers adjacent to said semiconductor fins such that said conductors are electrically isolated from said gate electrode,
wherein a height to width ratio of said semiconductor fins is at least 4:1, and wherein said gate electrode is adjacent to said sidewalls of said center region of each of said semiconductor fins, and is electrically isolated from said top surface of said center region of each of said semiconductor fins such that said field effect transistor comprises a multiple fin dual-gate transistor.
20. A field effect transistor comprising:
a substrate;
a plurality of semiconductor fins on said substrate,
wherein adjacent semiconductor fins are separated by a space,
wherein each of said semiconductor fins has a top surface, sidewalls, end regions, and a center region between said end regions; and
conductors adjacent to said semiconductor fins,
wherein each of said conductors traverses a corresponding one of said end regions of each of said semiconductor fins, and
wherein each of said conductors comprises a conductive material that is within said space extending a width of said space between said sidewalls of said adjacent semiconductor fins and is on said top surface of each of said semiconductor fins;
a gate electrode adjacent to said center region; and
dielectric spacers adjacent to said semiconductor fins such that said conductors are electrically isolated from said gate electrode,
wherein a height to width ratio of said semiconductor fins ranges between approximately 3:2 and 2:3 and wherein said gate electrode is adjacent to said top surface and said sidewalk of said center region of each of said semiconductor fins such that said field effect transistor comprises a multiple fin tri-gate transistor.