Method for fabricating semiconductor device
View Patent ↗Method for fabricating a semiconductor device, including the steps of providing a first conductive type semiconductor substrate having a cell region and a logic region defined thereon, forming a first insulating film, second conductive type polysilicon, and a second insulating film in succession on the semiconductor substrate, selectively removing the first insulating film, the polysilicon, and the second insulating film, to form a floating gate pattern at the cell region, elevating a temperature initially in a state O 2 gas is injected, maintaining a fix temperature, and dropping the temperature in a state N 2 gas is injected, to form a gate oxide film on a surface of the semiconductor substrate at the logic region, and forming a gate electrode pattern at each of the cell region and the logic region, whereby preventing a threshold voltage of a semiconductor device from dropping due to infiltration of impurities from doped polysilicon at the cell region to the active channel region.
1. A method for fabricating a semiconductor device, comprising the steps of:
providing a first conductive type semiconductor substrate having a cell region and a logic region defined thereon;
forming a first insulating film, a second conductive type polysilicon, and a second insulating film in succession on the semiconductor substrate;
selectively removing the first insulating film, the polysilicon, and the second insulating film, to form a floating gate pattern at the cell region;
forming a first gate oxide film on the semiconductor substrate at the logic region;
etching and removing the first gate oxide film;
forming a second gate oxide film on the semiconductor substrate at the logic region; and
forming a gate electrode pattern at each of the cell region and the logic region.
2. The method of fabricating a semiconductor device according to in claim 1 , wherein the first insulating film is an ONO layer having an oxide film having a thickness of 15˜25 Å, a nitride film having a thickness of 90˜110 Å, and an oxide film having a thickness of 30˜50 Å.
3. The method of fabricating a semiconductor device according to claim 1 , wherein the polysilicon is doped with second conductive type impurities and formed to a thickness in a range of 2000˜3000 Å.
4. The method of fabricating a semiconductor device according to claim 1 , wherein the second insulting film is a bi-layered film having TEOS (Tetra-ethoxysilane) deposited to a thickness of 100˜200 Å, and a nitride film deposited to a thickness of 1200˜1800 Å.
5. The method of fabricating a semiconductor device according to claim 1 , wherein the first gate oxide film is formed to a thickness of 100˜150 Å.
6. The method of fabricating a semiconductor device according to claim 1 , wherein the first gate oxide film is removed by wet etching with HF.
7. The method of fabricating a semiconductor device according to claim 1 , wherein impurities present at the semiconductor substrate are removed at the same time with the removal of the first gate oxide film.
8. A method for fabricating a semiconductor device, comprising the steps of:
providing a first conductive type semiconductor substrate having a cell region and a logic region defined thereon;
forming a first insulating film a second conductive type polysilicon, and a second insulating film in succession on the semiconductor substrate;
selectively removing the second insulating film, and the polysilicon, to form a floating gate pattern at the cell region;
forming a sidewall oxide film on sidewalls of the floating gate pattern;
selectively removing the first insulating film by using the second insulating film as a mask after forming the sidewall oxide film;
forming a gate oxide film on the semiconductor substrate at the logic region; and
forming a gate electrode pattern at each of the cell region and the logic region.
9. The method of fabricating a semiconductor device according to claim 8 , wherein the first insulating film is an ONO layer having an oxide film having a thickness of 15˜25 Å, a nitride film having a thickness of 90˜110 Å, and an oxide film having a thickness of 30˜50 Å.
10. The method of fabricating a semiconductor device according to claim 8 , wherein the polysilicon is doped with second conductive type impurities and formed to a thickness in a range of 2000˜3000 Å.
11. The method of fabricating a semiconductor device according to claim 8 , wherein the second insulating film is a bi-layered film having TEOS (Tetra-ethoxysilane) deposited to a thickness of 100˜200 Å, and a nitride film deposited to a thickness of 1200˜1300 Å.
12. The method of fabricating a semiconductor device according to claim 8 , wherein the sidewall oxide film is formed to a thickness of 80˜120 Å.
13. The method of fabricating a semiconductor device according to claim 8 , wherein the gate oxide film is formed to a thickness of 100˜150 Å.
14. A method for fabricating a semiconductor device, comprising the steps of:
providing a first conductive type semiconductor substrate having a cell region and a logic region defined thereon;
forming a first insulating film, and a polysilicon in succession on the semiconductor substrate;
injecting second conductive type impurity ions into the polysilicon, and forming a second insulating film on the polysilicon;
selectively removing the first insulating film, the polysilicon, and the second insulating film, to form a floating gate pattern at the cell region;
forming a gate oxide film on a surface of the semiconductor substrate at the logic region; and
forming a gate electrode pattern at each of the cell region and the logic region.
15. The method of fabricating a semiconductor device according to claim 14 , further comprising the step of performing heat treatment after the injection of second conductive type impurity ions into the polysilicon.
16. The method of fabricating a semiconductor device according to claim 15 , wherein the heat treatment is performed at a temperature in a range of 800˜1000° C. for 10˜30 minutes.
17. The method of fabricating a semiconductor device according to claim 14 , wherein the step of injecting second conductive type impurity ions into the polysilicon includes the step of injecting second conductive type impurity ions into the polysilicon at a dose in a range of 1e 15 ˜10e 15 ions/cm 2 , with an ion injection energy in a range of 40˜50 keV.
18. The method of fabricating a semiconductor device according to claim 14 , wherein the first insulating film is an ONO layer having an oxide film having a thickness of 15˜25 Å, a nitride film having a thickness of 90˜110 Å, and an oxide film having a thickness of 30˜50 Å.
19. The method of fabricating a semiconductor device according to claim 14 , wherein the second insulating film is a bi-layered film having TEOS (Tetra-ethoxysilane) deposited to a thickness of 100˜200 Å, and a nitride film deposited to a thickness of 1200˜1800 Å.
20. The method of fabricating a semiconductor device according to claim 14 , wherein the gate oxide film is formed to a thickness of 100˜150 Å.