SYSTEM AND METHOD FOR PROCESSING A SUBSTRATE UTILIZING A GAS STREAM FOR PARTICLE REMOVAL
A system and method of processing a substrate. The method and system applies a liquid to a surface of the substrate so as to form a film of the liquid on the surface of the substrate, wherein a boundary layer exists at the interface of the surface and the film of the liquid. The cleaning system then applies a force that penetrates the boundary layer so as to create a localized area on the surface of the substrate that is substantially free of the liquid. The application of the force in combination with the liquid removes particles from the surface of the substrate.
1 . A method of processing a substrate comprising the steps of:
a) supporting a substrate on a rotary support;
b) rotating the substrate about a rotational center-point;
c) applying a liquid to a surface of the substrate so as to form a film of the liquid on the surface of the substrate, wherein a boundary layer exists at the interface of the surface and the film of the liquid; and
d) applying a stream of gas to penetrate the boundary layer so as to create a localized area on the surface of the substrate that is substantially free of the liquid, the localized area being surrounded by the film of liquid.
2 . The method of claim 1 wherein the substrate is rotated at a speed less than 150 RPMs.
3 . The method of claim 1 further comprising:
e) moving the localized area along the surface of the substrate in a radial direction.
4 . The method of claim 3 wherein step e) comprises moving the localized area from at or near the rotational center-point to at or near an edge of the substrate.
5 . The method of claim 3 wherein the liquid is applied via a first dispenser and the stream of gas is supplied via a second dispenser, and wherein step e) further comprises moving the second dispenser along the surface of the substrate in the radial direction, the second dispenser leading the first dispenser during the radial movement.
6 . The method of claim 3 wherein the liquid is applied via a first dispenser and the stream of gas is supplied via a second dispenser, and wherein step e) further comprises moving the second dispenser along the surface of the substrate in the radial direction, the first dispenser leading the second dispenser during the radial movement.
7 . The method of claim 1 wherein the liquid is applied via a first dispenser and the stream of gas is applied via a second dispenser, the second dispenser being concentrically located within the first dispenser.
8 . The method of claim 1 wherein the stream of gas is applied at a non-perpendicular orientation with respect to the surface of the substrate.
9 . The method of claim 1 further comprising providing an assembly having a first dispenser, a second dispenser and a third dispenser positioned between the first and second dispensers, wherein the liquid is applied via the first and second dispensers and the stream of gas is applied via the third dispenser.
10 . The method of claim 1 the liquid is heated to a temperature that is above ambient.
11 . The method of claim 10 wherein the temperature is greater than or equal to 100° C.
12 . The method of claim 1 wherein the gas is selected from the group consisting of nitrogen, CO2, CDA, Argon, Helium, Oxygen, and Ozone.
13 . The method of claim 1 wherein the liquid is selected from the group consisting of deionized water, diluted hydrofluoric acid, hydrochloric acid, hydrogen peroxide, ammonia hydroxide, diluted ammonia solution, and combinations thereof.
14 . The method of claim 1 further comprising applying sonic energy to the surface of the substrate prior to the application of the gas stream.
15 . A method for cleaning a semiconductor wafer comprising:
a) supporting a semiconductor wafer in a substantially horizontal orientation;
b) rotating the semiconductor wafer;
c) applying a liquid to a surface of the substrate so as to form a film of the liquid on the surface of the substrate, wherein a boundary layer exists at the interface of the surface and the film of the liquid;
d) applying sonic energy to the surface of the substrate so as to loosen particles located on the surface of the substrate; and
e) applying a stream of gas that penetrates the boundary layer so as to create a localized area on the surface of the substrate that is substantially free of the liquid, the localized area being surrounded by the film of the liquid and dislodging the particles away from the surface of the substrate.
16 . The method of claim 15 wherein the gas is heated.
17 . The method of claim 15 wherein the semiconductor wafer has a topography that is less than or equal to 65 nanometers.
18 . A method of processing a substrate comprising the steps of:
a) supporting a substrate;
b) rotating the substrate;
c) applying a liquid to a surface of the substrate so as to form a film of the liquid on the surface of the substrate, wherein a boundary layer exists at the interface of the surface and the film of the liquid; and
d) applying a localized suction force to the film of liquid that breaks the boundary layer, thereby drawing liquid away from the surface of the substrate.
19 . The method of claim 18 wherein the localized suction force creates a localized area substantially free of the liquid, the localized area being surrounded by the film of the liquid.
20 . A system for processing a substrate comprising:
a rotary support for supporting a substrate;
a first dispenser adapted to apply a liquid to a surface of the substrate so as to form a film of the liquid on the surface of the substrate, wherein a boundary layer exists at the interface of the surface of the substrate and the film of the liquid; and
a second dispenser adapted to supply a stream of gas and having an outlet, the second dispenser positioned so that the outlet is sufficiently close to the surface of the substrate so that the stream of gas penetrates the boundary layer so as to create a localized area on the surface of the substrate that is substantially free of the liquid, the localized area being surrounded by the film of liquid.
21 . The system of claim 20 wherein the second dispenser is concentrically located within the first dispenser.
22 . The system of claim 20 further comprising means for translating the second dispenser above the surface of the substrate.
23 . The system of claim 20 wherein the second dispenser is oriented so that the stream of gas is supplied at a non-normal orientation with respect to the surface of the substrate.
24 . The system of claim 20 further comprising means for heating the stream of gas prior to exiting the outlet of the second dispenser.
25 . The system of claim 1 further comprising a source of gas operably coupled to the second dispenser.
26 . The system of claim 25 wherein the gas is selected from the group consisting of nitrogen, CO2, CDA, Argon, Helium, Oxygen, and Ozone.
27 . The system of claim 20 further comprising a source of sonic energy positioned adjacent a surface of a substrate positioned on the rotary support.
28 . A system for processing a substrate comprising:
a rotary support for supporting a substrate;
a first dispenser adapted to apply a liquid to a surface of the substrate so as to form a film of the liquid on the surface of the substrate, wherein a boundary layer exists at the interface of the surface of the substrate and the film of the liquid; and
a second dispenser adapted to apply a localized suction force and having an opening, the second dispenser positioned so that the opening is sufficiently close to the surface of the substrate so that the opening is contact with the film of liquid.