Capping of metal interconnects in integrated circuit electronic devices

1. A method for forming a multilayer metal cap over a metal-filled interconnect feature in a dielectric layer for incorporation into a multilayer integrated circuit device comprising:

depositing a first cobalt-based metal cap layer over the metal-filled interconnect feature in a first electroless deposition process employing a first electroless solution comprising a source of Co ions and a borane-based reducing agent and wherein the first metal cap layer is substantially continuous and has a thickness between about 5 angstroms and about 50 angstroms; and

depositing a second cobalt-based metal cap layer over the first metal cap layer in a second electroless deposition process distinct from the first deposition process wherein the second deposition process is electroless and employs a second electroless solution which comprises a source of Co ions and a reducing agent, and which is distinct from, and prepared separately from, the first electroless solution, to thereby form the multilayer metal cap as a permanent component distinct from the metal-filled interconnect feature.

2. The method of claim 1 wherein the metal-filled interconnect feature is a Cu-filled interconnect feature.

3. The method of claim 1 wherein the first cobalt-based metal cap layer has a thickness between about 5 angstroms and about 20 angstroms.

4. The method of claim 1 wherein the first cobalt-based metal cap layer is a cobalt-based alloy selected from the group consisting of Co—W—B, Co—W—B—P, Co—B—P, Co—B, Co—Mo—B, Co—W—Mo—B, and Co—W—Mo—B—P.

5. The method of claim 1 wherein the first cobalt-based metal cap layer is a cobalt-based alloy selected from the group consisting of Co—W—B, Co—W—B—P, Co—B—P, and Co—B.

6. The method of claim 1 wherein the second cobalt-based metal cap layer has a thickness between about 60 angstroms about 100 angstroms.

7. The method of claim 1 wherein the second cobalt-based metal cap layer has a thickness greater than about 100 angstroms.

8. The method of claim 1 wherein the second cobalt-based metal cap layer has a thickness between about 100 angstroms and about 300 angstroms.

9. The method of claim 1 wherein the second cobalt-based metal cap layer is a cobalt-based alloy selected from the group consisting of Co—W—P, Co—W—B, Co—W—B—P, Co—B—P, Co—B, Co—Mo—B, Co—W—Mo—B, Co—W—Mo—B—P, and Co—Mo—P.

10. The method of claim 1 further comprising the step of depositing a discontinuous, substantially uncoalesced Co seed onto the metal-filled interconnect feature prior to depositing the first cobalt-based metal cap layer.

11. The method of claim 1 further comprising the step of depositing a third metal cap layer over the second cobalt-based metal cap layer in a third deposition process distinct from the second deposition process.

12. A method for forming a multilayer metal cap over a metal-filled interconnect feature in a dielectric layer for incorporation into a multilayer integrated circuit device comprising:

depositing a first metal cap layer over the metal-filled interconnect feature in a first noble metal immersion deposition process employing a noble metal immersion solution comprising a source of noble metal ions;

depositing a second cobalt-based metal cap layer over the first metal cap layer in a first electroless deposition process distinct from the first deposition process, wherein the first electroless deposition process employs a first electroless deposition solution comprising a source of Co ions and a reducing agent; and

depositing a third cobalt-based metal cap layer over the second metal cap layer in a second electroless deposition process distinct from the first electroless deposition process, wherein the second electroless deposition process employs a second electroless deposition solution comprising a source of Co ions and a reducing agent, which is distinct from, and prepared separately from, the second electroless deposition solution, to thereby form the multilayer metal cap as a permanent component distinct from the metal-filled interconnect feature.

13. The method of claim 12 wherein the metal-filled interconnect feature is a Cu-filled interconnect feature.

14. The process of claim 12 wherein depositing the first metal cap layer comprises depositing a Pd layer which is discontinuous and substantially uncoalesced, and functions as a seed layer for the second deposition process.

15. The process of claim 12 wherein depositing the first metal cap layer comprises depositing a Pd layer which is substantially continuous and has a thickness between about 5 and about 50 angstroms.

16. The method of claim 12 wherein the second cobalt-based metal cap layer has a thickness between about 5 angstroms and about 50 angstroms.

17. The method of claim 12 wherein the second cobalt-based metal cap layer has a thickness between about 5 angstroms and about 20 angstroms.

18. The method of claim 12 wherein the second cobalt-based metal cap layer has a thickness between about 60 angstroms about 100 angstroms.

19. The method of claim 12 wherein the second cobalt-based metal cap layer has a thickness greater than about 100 angstroms.

20. The method of claim 12 wherein the second cobalt-based metal cap layer has a thickness between about 100 angstroms and about 300 angstroms.

21. The method of claim 12 wherein the third cobalt-based metal cap layer has a thickness between about 60 angstroms about 100 angstroms.

22. The method of claim 12 wherein the third cobalt-based metal cap layer has a thickness greater than about 100 angstroms.

23. The method of claim 12 wherein the third cobalt-based metal cap layer has a thickness between about 100 angstroms and about 300 angstroms.

24. The method of claim 12 further comprising depositing a fourth metal cap layer over the third cobalt-based metal cap layer in a third electroless deposition process distinct from the second electroless deposition process.