Structure to share internally generated voltages between chips in MCP
View Patent ↗Embodiments of the invention generally provide an apparatus and technique for sharing an internally generated voltage between devices of a multi-chip package (MCP). The internally generated voltage may be shared via a conductive structure that electrically couples the devices and carries the internally generated voltage.
1. A multi-chip package (MCP), comprising:
a plurality of devices;
a first internal voltage generator located on at least one of the devices and designed to generate a first voltage signal from a voltage signal supplied to an external pad of the MCP;
an interconnect structure spanning the plurality of devices and allowing the first voltage signal to be shared between the plurality of devices; and
a switch on at least one of the devices allowing selective coupling of one or more traces to the interconnect structure.
2. The multi-chip package of claim 1 , further comprising:
control logic to generate a control signal to disconnect the one or more traces for one of the devices from the interconnect structure when the one device is not selected.
3. The multi-chip package of claim 1 , wherein:
each device has an internal voltage generator with a capacitor to maintain a voltage generated thereby; and
the interconnect structure forms a parallel connection between the capacitors resulting in a summing of the corresponding capacitance.
4. The multi-chip package of claim 1 , wherein the devices comprise devices with different functions.
5. The multi-chip package of claim 1 , wherein:
at least one of the devices comprises a processor; and
at least one of the devices comprises a memory device.
6. A multi-chin package (MCP), comprising:
a plurality of memory devices;
a first internal voltage generator located on at least one of the memory devices and designed to generate a first voltage signal from a voltage signal supplied to an external pad of the MCP;
an interconnect structure spanning the plurality of memory devices and allowing the first voltage signal to be shared between the plurality of memory devices; and
a switch on at least one of the memory devices allowing selective coupling of one or more traces to the interconnect structure.
7. The multi-chip package of claim 6 , further comprising:
control logic to generate a control signal to disconnect the one or more traces for one of the memory devices from the interconnect structure when the one memory device is not being accessed.
8. The multi-chip package of claim 6 , wherein:
each memory device has an internal voltage generator with a capacitor to maintain a voltage generated thereby; and
the interconnect structure forms a parallel connection between the capacitors resulting in a summing of the corresponding capacitance.
9. The multi-chip package of claim 6 , wherein at least two of the memory devices are dynamic random access memory (DRAM) devices.
10. The multi-chip package of claim 9 , wherein the internal voltage generator generates a Voltage Bit Line High (VBLH) voltage.
11. The multi-chip package of claim 6 , wherein:
at least one of the memory devices comprises a dynamic memory device; and
at least one of the memory devices comprises a static memory device.
12. A method, comprising:
generating a voltage with a circuit internal to a first device of a multi-chip package (MCP);
providing the generated voltage to a second device of the MCP via an interconnect structure that spans the first and second devices; and,
selectively coupling one or more traces to the interconnect structure.
13. The method of claim 12 , wherein selectively coupling one or more traces to the interconnect structure comprises generating a control signal to control a switch to disconnect the one or more traces for one of the devices from the interconnect structure when the one device is not selected.
14. The method of claim 12 , comprising:
generating a voltage with a circuit internal to each of the first and second devices, each device having an internal voltage generator with a capacitor to maintain a voltage generated thereby; and
connecting the capacitors in parallel via the interconnect structure resulting in a summing of the corresponding capacitance.
15. The method of claim 12 , wherein the first and second devices comprise devices with different functions.
16. The method of claim 12 , wherein:
the first device comprises a processor; and
the second device comprises a memory device.
17. The method of claim 12 , wherein:
the first and second device comprise dynamic random access memory (DRAM) devices; and
the generated voltage comprises a VBLH voltage.