Semiconductor device with different conductive features embedded in a mold enclosing a semiconductor die and method for making same
View Patent ↗A method for making a semiconductor device includes creating conductive structures on a substrate. Contact pads of a semiconductor die are connected to first ends of conductive structures. The semiconductor die is encapsulated or embedded and the substrate is removed such that second ends of the conductive structures are exposed to the exterior.
1. A method of manufacturing a semiconductor device, the method comprising:
forming conductive structures on a substrate, wherein forming conductive structures comprises:
depositing a photoresist layer on the substrate,
structuring the photoresist layer, and
depositing a conductive layer, wherein structuring the photoresist layer and depositing the conductive layer are repeatedly performed, thereby creating conductive structures of different thickness or portions of a conductive structure of a different thickness, and wherein a second end of a conductive structure is formed so as to have substantially the same thickness as the semiconductor device;
connecting contact pads of a semiconductor die to first ends of the conductive structures;
encapsulating the semiconductor die; and
removing the substrate such that second ends of the conductive structures are exposed.
2. The method of claim 1 , wherein the second end of the conductive structure with substantially the same thickness as the semiconductor device remains exposed to an exterior of the semiconductor device on its upper surface and on its lower surface after encapsulating the semiconductor die.
3. The method of claim 1 , wherein the photoresist layer is removed after depositing the conductive layer.
4. The method of claim 1 , wherein creating conductive structures on the substrate involves depositing a metal layer of a solderable metal on a partial area of a surface of the substrate, the deposited metal layer forming the conductive structures.
5. The method of claim 1 , wherein forming conductive structures on the substrate involves etching a partial area of a surface of the substrate, a non-etched remainder of the surface of the substrate forming the conductive structures.
6. The method of claim 1 , wherein prior to connecting the contact pads of the semiconductor die, the semiconductor die is provided with contact bumps, each contact bump comprising a pillar protruding from an active side of the semiconductor die and having a solder deposited on its free end.
7. The method of claim 1 , wherein removing the substrate comprises etching substrate material.
8. The method of claim 1 , further comprising depositing an etch-stop layer prior to forming the conductive structures.
9. The method of claim 1 , further comprising attaching contacts to the second ends of the conductive structures after removing the substrate.
10. The method of claim 9 , wherein attaching the contacts to the conductive structures comprises depositing a solder-stop layer leaving out contact areas of the conductive structures, and affixing solder balls onto the contact areas of the conductive structures.
11. The method of claim 10 wherein the solder-stop layer is deposited to a side of the semiconductor device from which the substrate has been removed.
12. A method of manufacturing a semiconductor device, the method comprising:
forming conductive structures on a substrate, wherein forming conductive structures comprises:
depositing a photoresist layer on the substrate,
structuring the photoresist layer, and
depositing a conductive layer, wherein depositing the photoresist layer on the substrate, structuring the photoresist layer and depositing the conductive layer are repeatedly performed, thereby creating conductive structures of different thicknesses or portions of a conductive structure of different thickness, wherein a second end of a conductive structure is created so as to have substantially the same thickness as the semiconductor device;
connecting contact pads of a semiconductor die to first ends of the conductive structures;
encapsulating the semiconductor die; and
removing the substrate such that second ends of the conductive structures are exposed.
13. The method of claim 12 , wherein the second end of the conductive structure with substantially the same thickness as the semiconductor device remains exposed to an exterior of the semiconductor device on its upper surface and on its lower surface after encapsulation or embedding of the semiconductor die.
14. A method of manufacturing a semiconductor device, the method comprising:
forming a first conductive structure over a substrate having a first end and an opposite second end;
forming a second conductive structure over the substrate having a first end and an opposite second end, the second conductive structure having the same thickness as the semiconductor device;
connecting contact pads of a semiconductor die to the first end of the first conductive structure;
encapsulating the semiconductor die, the first and the second conductive structures; and
removing the substrate to expose the second end of the first and the second conductive structures.
15. The method of claim 14 , wherein the second ends of the first and the second conductive structures are formed on an etch-stop layer disposed over the substrate, and wherein removing the substrate comprises removing the etch-stop layer after etching the substrate.
16. The method of claim 14 , wherein the substrate comprises a metallic material different from a material of the first and the second conductive structures.
17. The method of claim 16 , wherein the substrate comprises aluminum, and wherein the first and the second conductive structures comprises copper.
18. The method of claim 14 , wherein the first end of the first conductive structure contacts a solder ball disposed on the semiconductor die.
19. The method of claim 14 , wherein the first end of the first conductive structure contacts a solder menisci disposed on a pillar bump disposed on the semiconductor die.
20. The method of claim 14 , further comprising a third conductive structure on the substrate, the third conductive structure coupling the first conductive structure with the second conductive structure.
21. The method of claim 20 , wherein the third conductive structure comprises a redistribution line physically coupled to the second ends of the first and the second conductive structures.
22. The method of claim 14 , further comprising forming a solder-stop layer on a surface comprising the exposed second ends of the first and the second conductive structures, the solder-stop layer not being formed over the second end of the second conductive structure.
23. The method of claim 22 , further comprising forming a solder ball on the second end of the second conductive structure.