Methods and apparatus for cleaning chamber components
View Patent ↗In a first aspect, a method for cleaning a semiconductor fabrication chamber component having an orifice is provided. The method includes (A) placing the component into a bath having a cleaning solution; (B) flowing a fluid into the orifice thereby maintaining at least a first portion of the orifice free from cleaning solution while the cleaning solution cleans the component; and (C) withdrawing the fluid from the orifice such that cleaning solution enters into the first portion of the orifice and cleans the first portion of the orifice. Numerous other aspects are also provided.
1. A method of cleaning a semiconductor fabrication chamber component having an orifice comprising:
placing the component into a bath having a cleaning solution;
injecting a fluid into the orifice thereby maintaining at least a first portion of the orifice free from cleaning solution while the cleaning solution cleans the component;
controlling the amount of time the orifice is in contact with the cleaning solution; and
withdrawing the fluid from the orifice such that cleaning solution enters into the first portion of the orifice and cleans the first portion of the orifice;
wherein withdrawing the fluid from the orifice comprises applying a vacuum to the orifice.
2. The method of claim 1 , wherein the component is a gas distribution element.
3. The method of claim 2 , wherein the component is a face plate used in a deposition chamber.
4. The method of claim 1 , wherein the cleaning solution comprises:
hydrofluoric acid (HF); and
nitric acid (HNO 3 ).
5. The method of claim 4 , wherein the cleaning solution comprises about 10% hydrofluoric acid and about 90% nitric acid.
6. The method of claim 4 , wherein the cleaning solution comprises about 15% hydrofluoric acid and about 85% nitric acid.
7. The method of claim 4 , wherein the cleaning solution comprises about 5% hydrofluoric acid and about 95% nitric acid.
8. The method of claim 1 , wherein the fluid is nitrogen gas.
9. The method of claim 1 , wherein the fluid is an inert gas.
10. The method of claim 1 , further comprising:
flowing the fluid into the orifice after the fluid is withdrawn from the orifice; and
withdrawing the fluid from the orifice a second time.
11. The method of claim 1 , wherein flowing the fluid into the orifice comprises:
coupling a jig to the component; and
flowing the fluid through the jig and into the orifice.
12. The method of claim 11 , wherein the jig forms a fluid tight seal with the component.
13. A method of cleaning a semiconductor fabrication chamber component having an orifice comprising:
placing the component into a bath having a cleaning solution;
injecting a fluid into the orifice thereby maintaining at least a first portion of the orifice free from cleaning solution while the cleaning solution cleans a second portion of the orifice;
controlling the amount of time the orifice is in contact with the cleaning solution; and
withdrawing the fluid from the orifice such that cleaning solution enters into the first portion of the orifice and cleans the first portion of the orifice;
wherein withdrawing the fluid from the orifice comprises applying a vacuum to the orifice.
14. The method of claim 13 , wherein the component is a gas distribution element.
15. The method of claim 14 , wherein the component is a face plate used in a deposition chamber.
16. The method of claim 13 , wherein the cleaning solution comprises:
hydrofluoric acid (HF); and
nitric acid (HNO 3 ).
17. The method of claim 13 , wherein flowing the fluid into the orifice comprises:
coupling a jig to the component; and
flowing the fluid through the jig and into the orifice.