Semiconductor package and fabrication method thereof

1. A semiconductor package, comprising:

a substrate having an insulative layer having a first surface and a second surface, an aperture formed through the insulative layer of the substrate, conductive patterns formed on the first surface and the second surface of the insulative layer;

a semiconductor die having a first surface and a second surface positioned in the aperture of the insulative layer of the substrate, the semiconductor device electrically coupled to the conductive patterns formed on the first surface of the insulative layer;

a heat spreader having a first surface and a second surface, the second surface of the semiconductor die attached to a first surface of the heat spreader by a first adhesive, wherein the heat spreader spans the aperture and is peripherally attached to the second surface of the substrate by a second adhesive;

at least one solder contact formed on a second surface of the heat spreader to emit heat from the heat spreader to an external device;

an encapsulant encapsulates the aperture, the semiconductor die, and the electrically conductive wire; and

an opening formed between the first adhesive and the second adhesive and between an exposed portion of the encapsulant and the heat spreader.

2. A semiconductor package in accordance with claim 1 , wherein the first adhesive has a high thermal conductivity, and the second adhesive has a high adhesion.

3. A semiconductor package in accordance with claim 1 , wherein a thermal conductivity of the first adhesive is higher than a thermal conductivity of the second adhesive.

4. A semiconductor package in accordance claim 1 , wherein adhesion of the first adhesive is lower than adhesion of the second adhesive, the second adhesive having a higher adhesion to reduce interface cracking due to differences in coefficients of thermal expansion.

5. A semiconductor package in accordance with claim 1 , wherein the first adhesive and the second adhesive are thermal adhesive.

6. A semiconductor package in accordance with claim 1 , wherein a width of the first adhesive is shorter than a width of the second surface of the semiconductor die.

7. A semiconductor package in accordance with claim 1 , further comprising at least one contact coupled to the conductive patterns formed on the second surface of the insulative layer.

8. A semiconductor package, comprising:

a substrate having an insulative layer, a plurality of conductive patterns formed on a first surface and a second surface of the insulative layer, an aperture formed through the substrate;

a semiconductor die having a first surface and a second surface positioned in the aperture of the substrate and electrically coupled to the conductive patterns formed on the first surface of the insulative layer by at least one conductive wire;

a heat spreader spanning the aperture;

means for attaching the heat spreader to the second surface of the semiconductor die;

means for attaching the heat spreader to a bottom surface of the substrate; and

an encapsulant encapsulates the aperture, the semiconductor die, and the electrically conductive wire;

wherein an opening is formed between the means for attaching the heat spreader to the second surface of the semiconductor die and the means for attaching the heat spreader to the bottom surface of the substrate and between an exposed portion of the encapsulant and the heat spreader.

9. A semiconductor package in accordance with claim 8 , wherein the means for attaching the heat spreader to the semiconductor die has a high thermal conductivity, and the means for attaching the heat spreader to the bottom surface of the substrate has a high adhesion.

10. A semiconductor package in accordance with claim 8 , wherein a thermal conductivity of the means for attaching the heat spreader to the semiconductor die is higher than a thermal conductivity of the means for attaching the heat spreader to the bottom second surface of the substrate.

11. A semiconductor package, comprising:

a substrate having an insulative layer, a plurality of conductive patterns formed on a first surface and a second surface of the insulative layer, an aperture formed through the substrate;

a semiconductor die having a first surface and a second surface positioned in the aperture of the substrate and electrically coupled to at least one of the conductive patterns formed on the first surface of the insulative layer by at least one conductive wire;

a heat spreader attached to the second surface of the semiconductor device by a first adhesive, wherein the heat spreader spans the aperture and is peripherally attached to a bottom surface of the substrate by a second adhesive having at least one open region;

an encapsulant encapsulates the aperture, the semiconductor die, and the electrically conductive wire; and

an opening formed between the first adhesive and the second adhesive and between an exposed portion of the encapsulant and second surface of the semiconductor die and the heat spreader.

12. A semiconductor package in accordance with claim 11 , wherein a thermal conductivity of the first adhesive is higher than a thermal conductivity of the second adhesive.

13. A semiconductor package in accordance claim 11 , wherein adhesion of the first adhesive is lower than adhesion of the second adhesive.

14. A semiconductor package in accordance claim 11 , wherein adhesion of the first adhesive is lower than adhesion of the second adhesive.

15. A semiconductor package in accordance with claim 11 , wherein the first adhesive and the second adhesive are thermal adhesive.

16. A semiconductor package in accordance with claim 11 , wherein a width of the first adhesive is shorter than a width of the second surface of the semiconductor die.

17. A semiconductor package in accordance with claim 11 , further comprising at least one solder formed on a lower surface of the heat spreader.