Dense chevron non-planar field effect transistors and method
View Patent ↗Disclosed are embodiments of semiconductor structure and a method of forming the semiconductor structure that simultaneously maximizes device density and avoids contacted-gate pitch and fin pitch mismatch, when multiple parallel angled fins are formed within a limited area on a substrate and then traversed by multiple parallel gates (e.g., in the case of stacked, chevron-configured, CMOS devices). This is accomplished by using, not a minimum lithographic fin pitch, but rather by using a fin pitch that is calculated as a function of a pre-selected contacted-gate pitch, a pre-selected fin angle and a pre-selected periodic pattern for positioning the fins relative to the gates within the limited area. Thus, the disclosed structure and method allow for the conversion of a semiconductor product design layout with multiple, stacked, planar FETs in a given area into a semiconductor product design layout with multiple, stacked, chevron-configured, non-planar FETs in the same area.
1. An integrated circuit structure comprising:
a substrate;
a limited area within said substrate, said limited area being essentially rectangular in shape;
multiple parallel angled semiconductor fins on said substrate diagonally traversing in said limited area, each of said fins comprising a discrete linear structure; and
multiple parallel gates on said substrate extending laterally across a width of said limited area and traversing said fins,
wherein said gates have a pre-selected first pitch,
wherein at least one of said fins is traversed by more than one of said gates,
wherein said fins are positioned diagonally relative to said gates at a pre-selected angle and according to a pre-selected periodic pattern with none of said fins being only partially traversed by a gate and none of said gates traversing an end of a fin, and
wherein said fins further have a second pitch that is predetermined, based on said angle and said first pitch, in order to achieve said periodic pattern.
2. The structure according to claim 1 , wherein said second pitch is approximately equal to said first pitch multiplied by the cosine of said angle.
3. The structure according to claim 1 , wherein said angle is other than 90 degrees.
4. The structure according to claim 1 ,
wherein said periodic pattern repeats within said limited area at every gate and with every fin, and
wherein, as a function of said periodic pattern, a first side of a right triangle extends vertically from a first intersecting point between a first gate and a first fin to a second intersecting point between a second gate adjacent to said first gate and a second fin adjacent to said first fin, a second side of said right triangle extends along said second gate from said second intersecting point to a third intersecting point between said first fin and said second gate, a hypotenuse of said right triangle extends along said first fin from said third intersecting point to said first intersecting point and a length of a bisecting line d through said right triangle is equal to said second pitch.
5. An integrated circuit structure comprising:
a substrate;
a limited area within said substrate, said limited area being essentially rectangular in shape;
multiple parallel angled semiconductor fins on said substrate in said limited area, each of said fins comprising a discrete linear structure; and
multiple parallel gates on said substrate extending laterally across a width of said limited area and traversing said fins,
wherein said gates have a pre-selected first pitch,
wherein at least one of said fins is traversed by more than one of said gates,
wherein said fins are positioned diagonally relative to said gates at a pre-selected angle and according to a pre-selected periodic pattern with none of said fins being only partially traversed by a gate and none of said gates traversing an end of a fin,
wherein said pre-selected periodic pattern repeats within said limited area at every Nth gate and at every Mth fin,
wherein N and M are pre-selected whole numbers greater than zero and at least one of N and M is greater than 1, and
wherein said fins further have a second pitch that is predetermined, based on said angle, a ratio of N over M, and said first pitch, in order to achieve said periodic pattern.
6. The structure according to claim 5 , wherein said second pitch is approximately equal to said ratio of N/M multiplied by said first pitch multiplied by the cosine of said angle.
7. The structure according to claim 5 , wherein said angle is other than 90 degrees.
8. The structure according to claim 5 , wherein N is equal to 2 and M is equal to 1, and wherein, as a function of said periodic pattern, a first side of a right triangle extends vertically from a first intersecting point between a first gate and a first fin through a second gate adjacent to said first gate and to a second intersecting point between a third gate adjacent to said second gate and a second fin adjacent to said first fin, a second side of said right triangle extends along said third gate from said second intersecting point to a third intersecting point between said first fin and said third gate, a hypotenuse of said right triangle extends along said first fin from said third intersecting point to said first intersecting point and a length of a bisecting line d through said right triangle equals said second pitch.
9. The structure according to claim 5 , wherein N is equal to 1 and M is equal to 2 and wherein, as a function of said periodic pattern, a first side of a right triangle extends vertically from a first intersecting point between a first gate and a first fin through a second fin adjacent to said first fin and to a second intersecting point between a second gate adjacent to said first gate and a third fin adjacent to said second fin, a second side of said right triangle extends along said second gate from said second intersecting point through said second fin to a third intersecting point between said first fin and said second gate, a hypotenuse of said right triangle extends along said first fin from said third intersecting point to said first intersecting point and a length of a bisecting line d through said right triangle equals two times said second pitch.
10. The structure according to claim 5 , wherein N is equal to 1 and M is equal to 3, and wherein, as a function of said periodic pattern, a first side of a right triangle extends vertically from a first intersecting point between a first gate and a first fin through a second fin adjacent to said first fin, through a third fin adjacent to said second fin, and to a second intersecting point between a second gate adjacent to said first gate and a fourth fin adjacent to said third fin, a second side of said right triangle extends along said second gate from said second intersecting point through said second fin and said third fin to a third intersecting point between said first fin and said second gate, a hypotenuse of said right triangle extends along said first fin from said third intersecting point to said first intersecting point and a length of a bisecting line d through said right triangle equals three times said second pitch.
11. The structure according to claim 5 , wherein N is equal to 2 and M is equal to 3, and wherein, as a function of said periodic pattern, a first side of a right triangle extends vertically from a first intersecting point between a first gate and a first fin through a second gate adjacent to said first gate, through a second fin adjacent to said first fin, through a third fin adjacent to said second fin, and to a second intersecting point between a third gate adjacent to said second gate and a fourth fin adjacent to said third fin, a second side of said right triangle extends along said third gate from said second intersecting point through said second fin and said third fin to a third intersecting point between said first fin and said third gate, a hypotenuse of said right triangle extends along said first fin from said third intersecting point to said first intersecting point and a length of a bisecting line d through said right triangle equals three times said second pitch.
12. An integrated circuit structure comprising:
a substrate;
a limited area within said substrate, said limited area being essentially rectangular in shape;
multiple parallel angled semiconductor fins on said substrate in diagonally traversing said limited area, each of said fins comprising a discrete linear structure and at least some of said fins having different lengths;
multiple parallel gates on said substrate extending laterally across a width of said limited area and traversing said fins,
wherein said gates have a pre-selected first pitch,
wherein at least one of said fins is traversed by more than one of said gates,
wherein said fins are positioned diagonally relative to said gates at a pre-selected angle and according to a pre-selected periodic pattern with none of said fins being only partially traversed by a gate and none of said gates traversing an end of a fin,
wherein said pre-selected periodic pattern repeats within said limited area at every Nth gate and at every Mth fin, N and M being pre-selected whole numbers greater than zero, and
wherein said fins further have a second pitch that is predetermined, based on said angle, a ratio of N over M, and said first pitch, in order to achieve said periodic pattern.
13. The structure according to claim 12 , wherein said second pitch is approximately equal to said ratio of N/M multiplied by said first pitch multiplied by the cosine of said angle.
14. The structure according to claim 12 , wherein said angle is other than 90 degrees.
15. The structure according to claim 12 , wherein N is equal to 1 and M is equal to 1, and wherein, as a function of said periodic pattern, a first side of a right triangle extends vertically from a first intersecting point between a first gate and a first fin to a second intersecting point between a second gate adjacent to said first gate and a second fin adjacent to said first fin, a second side of said right triangle extends along said second gate from said second intersecting point to a third intersecting point between said first fin and said second gate, a hypotenuse of said right triangle extends along said first fin from said third intersecting point to said first intersecting point and a length of a bisecting line d through said right triangle is equal to said second pitch.
16. The structure according to claim 12 , wherein N is equal to 2 and M is equal to 1, and wherein, as a function of said periodic pattern, a first side of a right triangle extends vertically from a first intersecting point between a first gate and a first fin through a second gate adjacent to said first gate and to a second intersecting point between a third gate adjacent to said second gate and a second fin adjacent to said first fin, a second side of said right triangle extends along said third gate from said second intersecting point to a third intersecting point between said first fin and said third gate, a hypotenuse of said right triangle extends along said first fin from said third intersecting point to said first intersecting point and a length of a bisecting line d through said right triangle equals said second pitch.
17. The structure according to claim 12 , wherein N is equal to 1 and M is equal to 2, and wherein, as a function of said periodic pattern, a first side of a right triangle extends vertically from a first intersecting point between a first gate and a first fin through a second fin adjacent to said first fin and to a second intersecting point between a second gate adjacent to said first gate and a third fin adjacent to said second fin, a second side of said right triangle extends along said second gate from said second intersecting point through said second fin to a third intersecting point between said first fin and said second gate, a hypotenuse of said right triangle extends along said first fin from said third intersecting point to said first intersecting point and a length of a bisecting line d through said right triangle equals two times said second pitch.
18. The structure according to claim 12 , wherein N is equal to 1 and M is equal to 3, and wherein, as a function of said periodic pattern, a first side of a right triangle extends vertically from a first intersecting point between a first gate and a first fin through a second fin adjacent to said first fin, through a third fin adjacent to said second fin, and to a second intersecting point between a second gate adjacent to said first gate and a fourth fin adjacent to said third fin, a second side of said right triangle extends along said second gate from said second intersecting point through said second fin and said third fin to a third intersecting point between said first fin and said second gate, a hypotenuse of said right triangle extends along said first fin from said third intersecting point to said first intersecting point and a length of a bisecting line d through said right triangle equals three times said second pitch.
19. The structure according to claim 12 , wherein N is equal to 2 and M is equal to 3, and wherein, as a function of said periodic pattern, a first side of a right triangle extends vertically from a first intersecting point between a first gate and a first fin through a second gate adjacent to said first gate, through a second fin adjacent to said first fin, through a third fin adjacent to said second fin, and to a second intersecting point between a third gate adjacent to said second gate and a fourth fin adjacent to said third fin, a second side of said right triangle extends along said third gate from said second intersecting point through said second fin and said third fin to a third intersecting point between said first fin and said third gate, a hypotenuse of said right triangle extends along said first fin from said third intersecting point to said first intersecting point and a length of a bisecting line d through said right triangle equals three times said second pitch.