Integrated circuit including quench devices

1. A memory comprising:

a bit line;

phase change memory cells coupled to the bit line;

a circuit coupled to the bit line, the circuit configured to perform a reset operation of a memory cell; and

at least two means for quenching a write signal on the bit line during a reset operation of a memory cell,

wherein the means for quenching comprise at least two quench transistors directly connected to the bit line at different points along the bit line, each of the at least two quench transistors comprising a source-drain path coupled between the bit line and a common or ground,

wherein each phase change memory cell comprises a selection transistor coupled to a phase change element, and

wherein each selection transistor includes dimensions equal to dimensions of each quench transistor.

2. The memory of claim 1 , wherein each phase change memory cell comprises a single gate transistor memory cell.

3. The memory of claim 1 , wherein each phase change memory cell comprises a dual gate transistor memory cell.

4. The memory of claim 1 , wherein a first means for quenching the write signal is directly connected to one end of the bit line and a second means for quenching the write signal is directly connected to the other end of the bit line.

5. A method for programming a memory, the method comprising:

selecting, via a circuit, a phase change memory cell to be reset;

applying, via the circuit, a reset signal to a bit line coupled to the memory cell; and

selecting, via the circuit, at least two quench transistors directly connected to the bit line at different points along the bit line to quench the reset signal to complete the resetting of the memory cell,

wherein selecting the phase change memory cell comprises selecting an access transistor coupled to a phase change element, and

wherein selecting the at least two quench transistors comprises selecting at least two quench transistors having dimensions equal to dimensions of the access transistor.

6. The method of claim 5 , wherein selecting the at least two quench transistors comprises selecting at least three quench transistors distributed along the bit line.

7. The method of claim 5 , wherein selecting the memory cell comprises selecting one of a single gate transistor memory cell and a dual gate transistor memory cell.

8. The method of claim 5 , wherein selecting the at least two quench transistors comprises selecting a first quench transistor directly connected to one end of the bit line and a second quench transistor directly connected to the other second end of the bit line.

9. A memory comprising:

a line;

at least two quench devices directly connected to the line at different points along the line;

a phase change memory cell coupled to the line; and

a circuit coupled to the line, the circuit configured to perform a write operation of the memory cell,

wherein the at least two quench devices are configured to quench a write signal on the line during a write operation of the memory cell, and

wherein the quench devices are coupled to the line at a distance from one end of the line as defined by ½n, . . . , (2n−1)/2n, where “n” equals the number of quench devices.

10. The memory of claim 9 , wherein the at least two quench devices comprise at least three quench devices distributed along the line.

11. The memory of claim 9 , wherein the quench devices comprise transistors.

12. The memory of claim 9 , wherein the phase change memory cell comprises a transistor coupled to a phase change element.

13. The memory of claim 9 , wherein the phase change memory cell comprises a diode coupled to a phase change element.

14. A method for programming a memory, the method comprising:

selecting, via a circuit, a phase change memory cell to be programmed;

applying, via the circuit, a write signal to a line coupled to the selected memory cell; and

selecting, via the circuit, at least two quench devices directly connected to the line at different points along the line to quench the write signal to complete the programming of the selected memory cell,

wherein selecting the at least two quench devices comprises selecting an “n” number of quench devices coupled to the line at a distance from one end of the line as defined by ½n, . . . , (2n−1)/2n.

15. The method of claim 14 , wherein selecting the memory cell comprises selecting a transistor coupled to a phase change element.

16. The method of claim 14 , wherein selecting the memory cell comprises selecting two transistors coupled to a phase change element.

17. The method of claim 14 , wherein selecting the memory cell comprises applying voltages to a cross-point array of phase change elements.

18. The method of claim 14 , wherein selecting the at least two quench devices comprises selecting at least three quench devices distributed along the line.