Method for detecting information of an electric potential on a sample and charged particle beam apparatus
View Patent ↗In a method and apparatus for measuring a potential on a surface of a sample using a charged particle beam while restraining a change in the potential on the sample induced by the charged particle beam application, or detecting a compensation value for a change in a condition for the apparatus caused by the sample being electrically charged, a voltage is applied to a sample such that a charged particle beam does not reach the sample (referred to as “mirror state”) when the charged particle beam is applied toward the sample. Information is detected, relating to a potential on the sample using signals obtained by the voltage application.
1. A method for detecting information of an electric potential on a sample, the method comprising calculating the information relating to the electric potential on the sample based on:
(i) information obtained based on charged particles detected when a magnitude of a negative voltage applied to the sample is higher than an acceleration voltage applied for accelerating a charged particle beam toward the sample in a state in which the charged particle beam is applied from a charged particle source toward the sample, wherein the information obtained based on the charged particles detected includes at least one of (1) a detected position of an electron reflected by the electric potential on the sample, (2) a position, an area, a rotation angle or a brightness of a structure of an electron microscope, wherein the structure is included in an image formed based on the electrons reflected by the electric potential on the sample, or (3) a blurring, a magnification or a distortion of the image, and
(ii) a correlation between the information obtained based on the charged particles detected and the information relating to the electric potential on the sample, wherein the correlation is obtained in advance.
2. The method for detecting information of an electric potential on a sample according to claim 1 , wherein the information obtained based on the charged particles detected relates to a position where charged particles reflected by an electric field formed by the applied voltage have arrived.
3. The method for detecting information of an electric potential on a sample according to claim 2 , further comprising detecting the information relating to the electric potential on the sample based on a difference between the position where the charged particles have arrived and a position where the charged particles have arrived that is obtained at a predetermined electric potential on the sample.
4. The method for detecting information of an electric potential on a sample according to claim 1 , wherein the information obtained based on the charged particles detected relates to an image formed based on charged particles reflected by an electric field formed by the applied voltage.
5. The method for detecting information of an electric potential on a sample according to claim 4 , further comprising detecting the information relating to the electric potential on the sample based on a difference in transfer quantity, blurring quantity and/or rotation quantity between the image formed based on the charged particles detected and an image obtained based on charged particles at a predetermined electric potential on the sample.
6. The method for detecting information of an electric potential on a sample according to claim 1 , further comprising: obtaining a relationship between the information obtained based on the charged particles at a predetermined electric potential on the sample and the electric potential on the sample; and detecting the electric potential on the sample based on the relationship.
7. The method for detecting information of an electric potential on a sample according to claim 1 , wherein the correlation is obtained in advance by measuring the information obtained based on the charged particles detected when a known electric potential is applied to the sample.
8. A charged particle beam apparatus comprising:
a charged particle source;
an objective lens that focuses a charged particle beam emitted from the charged particle source; and
a controller that controls a voltage applied to a sample;
wherein the controller calculates information relating to an electric potential on the sample based on:
(i) information obtained based on charged particles detected when a magnitude of a negative voltage applied to the sample is higher than an acceleration voltage applied for accelerating the charged particle beam toward the sample in a state in which the charged particle beam is applied from a charged particle source toward the sample, wherein the information obtained based on the charged particles detected includes at least one of (1) a detecting detected position of an electron discharged from reflected by the electric potential on the sample, (2) a position, an area, a rotation angle or a brightness of a structure of an electron microscope, wherein the structure is included in an image formed based on the electrons reflected by the electric potential on the sample, or (3) a blurring, a magnification or a distortion of the image, and
(ii) a correlation between the information obtained based on the charged particles detected and the information relating to the electric potential on the sample, wherein the correlation is obtained in advance.
9. The charged particle beam apparatus according to claim 8 , wherein the information obtained based on the charged particles detected relates to detected positions of the charged particles detected.
10. The charged particle beam apparatus according to claim 9 , wherein information of the detected positions indicates displacement quantity to a reference position of the detected positions of the charged particles.
11. The charged particle beam apparatus according to claim 8 , wherein the information obtained based on the charged particles detected relates to a rotation quantity of an image formed based on the charged particles detected.
12. The charged particle beam apparatus according to claim 8 , wherein the information obtained based on the charged particles detected relates to a blurring degree of an image formed based on the charged particles detected.
13. The charged particle beam apparatus according to claim 8 , wherein the controller forms an image of a structure which is located in the charged particle beam apparatus, based on the charged particles detected.
14. The charged particle beam apparatus according to claim 8 , wherein the information obtained based on the charged particles detected relates to a luminance of an image formed based on the charged particles detected.
15. The charged particle beam apparatus according to claim 8 , wherein the information relating to the electric potential on the sample is an adjustment parameter for the charged particle beam apparatus.
16. The charged particle beam apparatus according to claim 8 , wherein the correlation is obtained in advance by measuring the information obtained based on the charged particles detected when a known electric potential is applied to the sample.
17. A charged particle beam apparatus comprising:
a charged particle source;
an objective lens that focuses a charged particle beam emitted from the charged particle source; and
a controller that controls a voltage applied to a sample;
wherein the controller calculates a compensation value of an adjustment parameter for the charged particle beam apparatus based on:
(i) information obtained based on charged particles detected when a magnitude of a negative voltage applied to the sample is higher than an acceleration voltage applied for accelerating the charged particle beam toward the sample in a state in which the charged particle beam is applied from a charged particle source toward the sample, wherein the information obtained based on the charged particles detected includes at least one of (1) a detected position of an electron reflected by the electric potential on the sample, (2) a position, an area, a rotation angle or a brightness of a structure of an electron microscope, wherein the structure is included in an image formed based on the electrons reflected by the electric potential on the sample, or (3) a blurring, a magnification or a distortion of the image, and
(ii) a correlation between the information and the adjustment parameter of the charged particle beam apparatus, wherein the correlation is obtained in advance.
18. The charged particle beam apparatus according to claim 17 , wherein the correlation is obtained in advance by measuring the information obtained based on the charged particles detected when a known adjustment parameter is used.