IP Library › Granted Patent US 7,638,882
Granted Patent B2
US 7,638,882 · App. 11/963,472 · Granted Dec 29, 2009

Flip-chip package and method of forming thereof

Assignee: Intel Corporation
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,638,882
App. No.
11/963,472
Granted
Dec 29, 2009
Kind
B2
Abstract

A flip-chip package is disclosed. The flip-chip package includes a substrate comprising at least one build-up layer. At least one longitudinal trench is formed in at least one build-up layer of the substrate. The at least one longitudinal trench filled with a conductive material. A conductive plane may be disposed at least partially on the at least one longitudinal trench. An insulating layer may cover the conductive plane and, at least in part, at least one build-up layer of the substrate. The solder resist layer may include a plurality of openings partially exposing the conductive plane. A plurality of conductive pads may be disposed on the conductive plane through the plurality of openings. A method for fabricating the flip-chip package is also disclosed.

Claims (24)

1. A flip-chip package comprising:

a substrate comprising at least one build-up layer;

at least one longitudinal trench formed in said substrate, said longitudinal trench extending from one edge of said substrate to an opposite edge of said substrate and said longitudinal trench being as thick as said substrate, the at least one longitudinal trench filled with a conductive material;

a conductive plane disposed at least partially on the at least one longitudinal trench; and

a solder resist layer covering, at least in part, the conductive plane and the outer layer of the at least one layer of the substrate, said solder resist layer comprising a plurality of openings extending through to said conductive plane.

2. The flip-chip package of claim 1 , further comprising a plurality of conductive pads disposed on the conductive plane through the plurality of openings.

3. The flip-chip package of claim 2 , further comprising a plurality of solder bumps disposed on the plurality of conductive pads.

4. The flip-chip package of claim 1 , wherein the conductive material filled in the at least one longitudinal trench comprises copper.

5. The flip-chip package of claim 1 , wherein the conductive plane comprises copper.

6. The flip-chip package of claim 1 , wherein said build-up layer comprises an outer layer of said substrate.

7. The flip-chip package of claim 1 , wherein said build-up layer comprises an inner layer of said substrate.

8. A method for fabricating a flip-chip package, the method comprising:

providing a substrate comprising at least one build-up layer;

forming at least one longitudinal trench in the substrate, the longitudinal trench extending from one edge of the substrate to an opposite edge of the substrate and the longitudinal trench being as thick as the substrate;

filling the at least one longitudinal trench with a conductive material;

disposing a conductive plane at least partially covering the at least one longitudinal trench; and

disposing a solder resist layer covering, at least in part, the conductive plane and the outer layer of the at least one layer of the substrate, said solder resist layer comprising a plurality of openings extending through to said conductive plane.

9. The method of claim 8 , forming a plurality of openings in the insulating layer.

10. The method of claim 9 , further comprising disposing a plurality of conductive pads on the conductive plane through the plurality of openings.

11. The method of claim 10 , further comprising disposing a plurality of solder bumps on the plurality of conductive pads.

12. The method of claim 8 , wherein the conductive material filled in the at least one longitudinal trench comprises copper.

13. The method of claim 8 , wherein the conductive plane comprises copper.

14. The method of claim 8 , wherein said build up layer comprises an outer layer of said substrate.

15. The method of claim 8 , wherein said build up layer comprises an inner layer of said substrate.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 18, 2026
From: INTEL CORPORATION
To: INTEL FOUNDRY IP LLC
Reel/Frame 076065/0923 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 24, 2009
From: SANKMAN, BOB
To: INTEL CORPORATION
Reel/Frame 023139/0697 →
Continuity (1)
Related Publication 20090160068A1 · Jun 25, 2009