IP Library Granted Patent US 7,645,993
Granted Patent B2
US 7,645,993 · App. 11/966,672 · Granted Jan 12, 2010

Arrayed neutron detector with multi shielding allowing for discrimination between radiation types

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Quick Facts
Patent No.
US 7,645,993
App. No.
11/966,672
Granted
Jan 12, 2010
Kind
B2
Abstract

Neutron detectors including one or more gamma shields over memory dies and methods of making the neutron detectors are provided. The neutron detectors can contain two or more memory dies, neutron-reactant layers over the two or more memory dies, and one or more gamma shields over at least a portion of or an entire of the two or more memory dies. By containing the gamma shield over the at least a portion of or an entire of the two or more memory dies, the neutron detector can detect and discriminate neutrons in the presence of gamma rays.

Claims (27)

1. A neutron detector comprising:

two or more memory dies comprising a plurality of memory cells, the memory dies comprising neutron-reactant layers over the memory cells; and

one or more gamma shields over at least a portion of or an entire of the two or more memory dies, the gamma shield substantially preventing gamma rays from penetrating into the memory die under the gamma shield.

2. The neutron detector of claim 1 , wherein the two or more memory dies comprise a flash memory.

3. The neutron detector of claim 1 , wherein the neutron-reactant layer comprises a borophosphosilicate glass that reacts with a neutron and emits a 4 Alpha particle, and wherein the memory die uncovered with the gamma shield detects the 4 Alpha particle and gamma rays, and the memory die covered with the gamma shield detects the 4 Alpha particle and discriminates against gamma rays.

4. The neutron detector of claim 1 , wherein the neutron-reactant layer comprises 10 Boron that reacts with a neutron and emits a 4 Alpha particle, and wherein the memory die uncovered with the gamma shield detects the 4 Alpha particle and gamma rays, and the memory die covered with the gamma shield detects the 4 Alpha particle and discriminates against gamma rays.

5. The neutron detector of claim 4 , wherein the neutron-reactant layer comprises about 80 wt % or more and about 100 wt % or less of 10 Boron in a total Boron concentration.

6. The neutron detector of claim 1 , wherein the gamma shield comprises lead.

7. The neutron detector of claim 1 , wherein about 5% of memory dies or more and about 95% of memory dies or less is covered with the gamma shield.

8. The neutron detector of claim 1 further comprising a passivation layer over the two or more memory dies.

9. A method of making a neutron detector, comprising:

forming neutron-reactant layers over two or more memory dies; and

forming one or more gamma shields over at least a portion of or an entire of the two or more memory dies, the gamma shield substantially preventing gamma rays from penetrating into the memory die under the gamma shield.

10. The method of claim 9 , wherein the two or more memory dies comprise a flash memory.

11. The method of claim 9 , wherein the neutron-reactant layer comprises a borophosphosilicate glass that reacts with a neutron and emits a 4 Alpha particle, and wherein the memory die uncovered with the gamma shield detects the 4 Alpha particle and gamma rays, and the memory die covered with the gamma shield detects the 4 Alpha particle and discriminates against gamma rays.

12. The method of claim 9 , wherein the neutron-reactant layer comprises 10 Boron that reacts with a neutron and emits a 4 Alpha particle, and wherein the memory die uncovered with the gamma shield detects the 4 Alpha particle and gamma rays, and the memory die covered with the gamma shield detects the 4 Alpha particle and discriminates against gamma rays.

13. The method of claim 9 , wherein the neutron-reactant layer comprises about 80 wt % or more and about 100 wt % or less of 10 Boron in a total Boron concentration.

14. The method of claim 9 , wherein the gamma shield comprises lead.

15. The method of claim 9 , wherein the gamma shield covers about 5% of memory dies or more and about 95% of memory dies or less.

16. The method of claim 9 further comprising forming a passivation layer over the two or more memory dies.

17. A method of detecting strength of a neutron field, comprising:

providing a neutron detector comprising two or more memory dies, neutron-reactant layers over the two or more memory dies, and one or more gamma shields over at least a portion of or an entire of the two or more memory dies, the memory die comprising a plurality of memory cells, the gamma shield substantially preventing gamma rays from penetrating into the memory die under the gamma shield;

reading a state of each of the memory cells of the memory dies to determine a number of memory cells changing from an initial state to a disturbed state; and

determining the strength of the neutron field by using the number of memory cells having the disturbed state.

18. The method of claim 17 , wherein reading the state of each of the memory cells comprises reading the state of each of the memory cells uncovered with the gamma shield and reading the state of each of the memory cells covered with the gamma shield.

19. The method of claim 17 , wherein determining the strength of the neutron field comprises determining a percentage of the memory cells having the disturbed state.

20. The method of claim 17 , wherein determining the strength of the neutron field comprises comparing the disturbed percentage of the memory cells uncovered with the gamma shield and the disturbed percentage of the memory cells covered with the gamma shield.

Assignments (8)
CORRECTIVE ASSIGNMENT TO CORRECT THE 8647899 PREVIOUSLY RECORDED ON REEL 035240 FRAME 0429. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTERST. Recorded Nov 3, 2020
From: CYPRESS SEMICONDUCTOR CORPORATION; SPANSION LLC
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 058002/0470 →
RELEASE OF SECURITY INTEREST Recorded Dec 22, 2017
From: MORGAN STANLEY SENIOR FUNDING, INC
To: CYPRESS SEMICONDUCTOR CORPORATION; SPANSION LLC
Reel/Frame 044949/0962 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 21, 2017
From: CYPRESS SEMICONDUCTOR CORPORATION
To: MONTEREY RESEARCH, LLC
Reel/Frame 044938/0360 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 1, 2015
From: SPANSION, LLC
To: CYPRESS SEMICONDUCTOR CORPORATION
Reel/Frame 036049/0581 →
SECURITY INTEREST Recorded Mar 21, 2015
From: CYPRESS SEMICONDUCTOR CORPORATION; SPANSION LLC
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 035240/0429 →
RELEASE OF SECURITY INTEREST Recorded Mar 13, 2015
From: BARCLAYS BANK PLC
To: SPANSION LLC; SPANSION INC.; SPANSION TECHNOLOGY LLC
Reel/Frame 035201/0159 →
SECURITY AGREEMENT Recorded Jun 4, 2010
From: SPANSION LLC; SPANSION INC.; SPANSION TECHNOLOGY INC.; SPANSION TECHNOLOGY LLC
To: BARCLAYS BANK PLC
Reel/Frame 024522/0338 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 25, 2008
From: GAZDA, JERZY; HOSSAIN, TIM Z
To: SPANSION LLC
Reel/Frame 020697/0285 →