Defect reduction in electrodeposited copper for semiconductor applications

1. A method for electroplating a copper deposit onto a semiconductor integrated circuit device substrate with electrical interconnect features including submicron-sized features such that the surface has submicron-sized reliefs therein, said substrate comprising a wafer, the method comprising:

immersing the substrate into an electroplating bath including ionic copper, a suppressor, an accelerator, and an effective amount of a defect reducing agent comprising a reaction product of 1-chloromethylnaphthalene and hydroxyethyl polyethylenimine; and

electroplating the copper deposit from said bath onto the substrate to fill the submicron-sized reliefs whereby the occurrence of protrusion defects from superfilling, surface roughness, and voiding due to uneven growth are reduced, and macro-scale planarity across the wafer is improved.

2. A process as set forth in claim 1 wherein the amount of said defect reducing agent is effective to reduce the rate at which the copper deposit subsequently undergoes recrystallization and grain growth, whereby the deposit is characterized by a reduced concentration of internal voids.

3. The process as set forth in claim 1 wherein the ionic copper is present in the electroplating bath in a concentration between 10 g/L and 50 g/L.

4. A method for electroplating a copper deposit onto a semiconductor integrated circuit device substrate having electrical interconnect features including submicron-sized features such that the surface has submicron-sized reliefs therein, the method comprising:

immersing the substrate into an electroplating bath including ionic copper and an effective amount of a defect reducing agent which reduces a rate of recrystallization and grain growth in the copper deposit, thereby reducing the formation of internal voids within the copper deposit wherein the defect reducing agent comprises a reaction product of 1-chloromethylnaphthalene and hydroxyethyl polyethylenimine; and

electroplating the copper deposit from said bath onto the substrate to fill the submicron sized reliefs, which deposit subsequently undergoes recrystallization and grain growth at a reduced rate and thereby is characterized by a reduced concentration of internal voids.

5. A process as set forth in claim 4 wherein said substrate comprises a wafer the amount of said defect reducing agent is effective to reduce the occurrence of protrusion defects from superfilling, surface roughness, and voiding due to uneven growth and to improve the macro-scale planarity across the wafer.

6. The process as set forth in claim 4 wherein the ionic copper is present in the electroplating bath in a concentration between 10 g/L and 50 g/L.

7. A method for electroplating a copper deposit having a reduced rate of recrystallization and grain growth onto a semiconductor integrated circuit device substrate having electrical interconnect features including submicron-sized features such that the surface has submicron-sized reliefs therein, the method comprising:

immersing the substrate into an electroplating bath including ionic copper and an effective amount of a defect reducing agent which reduces a rate of recrystallization and grain growth in the copper deposit, thereby reducing the formation of internal voids within the copper deposit wherein said defect reducing agent comprises a quaternized polyvinylpyridine salt; and

electroplating the copper deposit from said bath onto the substrate to fill the submicron sized reliefs, which deposit within said submicron reliefs subsequently undergoes recrystallization and grain growth at a reduced rate and thereby is characterized by a reduced concentration of internal voids.

8. A process as set forth in claim 7 wherein said substrate comprises a wafer the amount of said defect reducing agent is effective to reduce the occurrence of protrusion defects from superfilling, surface roughness, and voiding due to uneven growth and to improve the macro-scale planarity across the wafer.

9. The process as set forth in claim 7 wherein the electroplating bath includes a suppressor and an accelerator.

10. The process as set forth in claim 7 wherein the ionic copper is present in the electroplating bath in a concentration between 10 g/L and 50 g/L.