Reduction of defects formed on the surface of a silicon oxynitride film
View Patent ↗Methods for reducing defects on the surface of a silicon oxynitride film are disclosed. In one embodiment, the methods include forming a silicon oxynitride film on a semiconductor substrate and heating the silicon oxynitride film to increase a hydrophilicity of a surface of the silicon oxynitride film prior to treating the surface of the silicon oxynitride film with a hydrofluoric acid.
1. A method for performing a shallow trench isolation in an integrated circuit device, comprising:
forming a pattern of trenches in a semiconductor substrate during a process of the shallow trench isolation; and
heating the integrated circuit device prior to treating the trenches with a hydrofluoric acid, wherein the forming of the pattern of trenched comprises:
forming a first silicon oxide film on the semiconductor substrate;
forming a silicon nitride film on the first silicon oxide film;
forming a silicon oxynitride film on the silicon nitride film;
applying a photoresist on the silicon oxynitride film; and
forming a plurality of openings via the photoresist by an exposure technique; and
etching the silicon oxynitride film, the silicon nitride film, the first silicon oxide film and the semiconductor substrate via the plurality of openings to form the pattern of trenches.
2. The method of claim 1 , further comprising:
forming a second silicon oxide film on the trenches;
forming a silicon oxide layer above the second silicon oxide film and the silicon oxynitride film; and
polishing the silicon oxide layer.
3. The method of claim 1 , wherein the heating the integrated circuit device is performed using a temperature more than 800 degrees Celsius.
4. The method of claim 1 , wherein the silicon oxynitride film is used as a reflection preventing film or a stopper layer.
5. The method of claim 2 , wherein the polishing is performed using a ceria slurry.
6. A method for forming contact holes in an insulating film in an integrated circuit device, comprising:
forming a pattern of contact holes on an interlayer insulating film; and
heating the integrated circuit device prior to treating the trenches with a hydrofluoric acid, wherein the forming of the pattern of contact holes comprises:
forming an interlayer insulating film on a semiconductor substrate;
forming a silicon oxynitride film on the interlayer insulating film;
applying a photoresist on the silicon oxynitride film;
forming a plurality of openings via the photoresist by an exposure technique; and
etching the silicon oxynitride film, the interlayer insulating film and the semiconductor substrate via the plurality of openings to form the pattern of contact holes.
7. The method of claim 6 , further comprising:
forming a metal layer on the contact holes and on the silicon oxynitride film; and
polishing the metal layer.
8. The method of claim 6 , wherein the heating the integrated circuit device is performed using a temperature more than 800 degrees Celsius.
9. The method of claim 6 , wherein the silicon oxynitride film is used as a reflection preventing film or a stopper layer.
10. The method of claim 7 , wherein the polishing is performed using a ceria slurry.