Method and apparatus for fabricating a high-performance band-edge complementary metal-oxide-semiconductor device

1. A method for fabricating a complementary metal-oxide-semiconductor device comprising an n-type metal-oxide-semiconductor device and a p-type metal-oxide-semiconductor device, the method comprising:

fabricating the n-type metal-oxide-semiconductor device using a gate first process, the n-type metal-oxide-semiconductor device comprising a first polysilicon layer and a first silicide layer deposited on the first polysilicon layer; and

fabricating the p-type metal-oxide-semiconductor device using a gate last process without exposing the first polysilicon layer of the n-type metal-oxide-semiconductor device, the p-type metal-oxide-semiconductor device comprising a second polysilicon layer and a second silicide layer deposited on the second polysilicon layer, wherein the fabricating the p-type metal-oxide-semiconductor device comprises:

creating a trench in a region of the p-type metal-oxide-semiconductor device;

lining the trench with a layer of p-type metal;

depositing a tungsten layer over the layer of p-type metal;

depositing a silicon nitride layer over the n-type metal-oxide-semiconductor and the p-type metal-oxide-semiconductor device, prior to creating the trench; and

depositing an oxide layer over the silicon nitride layer,

wherein creating the trench comprises:

etching the oxide layer down to the silicon nitride layer above the n-type metal-oxide-semiconductor device and the p-type metal-oxide-semiconductor device;

etching the silicon nitride layer above the p-type metal-oxide-semiconductor device only; and

etching the second silicide layer without etching the first silicide layer;

etching the second polysilicon layer without etching the first polysilicon layer; and

etching a titanium nitride layer in the region of the p-type metal-oxide-semiconductor device only.

2. The method of claim 1 , further comprising:

depositing a photoresist layer over the n-type metal-oxide-semiconductor device prior to etching the silicon nitride layer; and

removing the photoresist layer after etching the silicon nitride layer but prior to etching the second polysilicon layer.

3. The method of claim 1 , further comprising:

opening a plurality of contact areas in the complementary metal-oxide-semiconductor device;

depositing a tungsten layer over the n-type metal-oxide-semiconductor device and the p-type metal-oxide-semiconductor device, such that the plurality of contact areas is filled with tungsten; and

removing a portion of the tungsten layer.

4. The method of claim 1 , wherein the n-type metal-oxide-semiconductor device is capped with a layer of a material comprising at least one element from Group IIA or Group IIIB of the Periodic Table of Elements.

5. The method of claim 4 , wherein the n-type metal-oxide-semiconductor device is capped with a layer of an oxide of a Group IIA or Group IIIB element or a nitride of a Group IIA or Group IIIB element.

6. The method of claim 5 , wherein the n-type metal-oxide-semiconductor device is capped with a layer of lanthanum oxide or magnesium oxide.

7. The method of claim 1 , wherein the p-type metal-oxide-semiconductor device is a quasi-damascene structure.

8. The method of claim 1 , wherein the p-type metal-oxide-semiconductor device comprises a layer of TiN or TaN, modified by exposure to oxygen.

9. The method of claim 1 , wherein each of the n-type metal-oxide-semiconductor device and a p-type metal-oxide-semiconductor device comprises:

a high-k dielectric layer comprising at least one of: hafnium oxide (HfO 2 ), zirconium oxide (ZrO 2 ), lanthanum oxide (La 2 O 3 ), aluminum oxide (Al 2 O 3 ), titanium oxide (TiO 2 ), strontium titanium oxide (SrTiO 3 ), lanthanum aluminum oxide (LaAlO 3 ), ytterbium oxide (Y 2 O 3 ), HfO x N y , ZrO x N y , La2O x N y , Al 2 O x N y , TiO x N y , SrTiO x N y , LaAlO x N y , Y 2 O x N y , a silicate thereof, and a mixture thereof;

a titanium nitride deposited over the high-k dielectric layer; and

a polysilicon layer deposited over the titanium nitride layer.

10. The method of claim 1 , wherein the complementary metal-oxide-semiconductor device is a band edge device.

11. The method of claim 1 , wherein a device integration of the n-type metal-oxide-semiconductor device is completed before fabricating the p-type metal-oxide-semiconductor device.

12. The method of claim 1 , wherein the p-type metal is: platinum, iridium, titanium nitride, ruthenium, tantalum carbon nitride, titanium aluminum nitride, tantalum carbon nitride, or rhenium.

13. The method of claim 1 , wherein the oxide layer is deposited by a high density plasma deposition process.