Low pass filter incorporating coupled inductors to enhance stop band attenuation
View Patent ↗The present invention relates to a low pass filter incorporating coupled inductors to enhance stop band attenuation. In one embodiment, the coupled inductors are provided along with various capacitors to provide for superior performance within a smaller surface area of a semiconductor or ceramic integrated device. In a further specific embodiment, the capacitors are formed on an integrated device within an area on which entirely intertwined inductors are formed. In another embodiment, at least one further pair of coupled inductors is included to create additional frequency attenuation notches, as well as a wide stop-band.
1. A filter circuit disposed between an input line, an output line, and a ground line, each of the input line, the output line and the ground line each having a parasitic resistance and a parasitic inductance associated therewith, the filter circuit comprising:
a first inductor having first coils disposed in series with a first resistor between the input line and the output line, wherein a first node is created between the first inductor and the first resistor;
a second inductor having second coils and a first capacitor disposed in series between the first node and the ground line, wherein the second coils of the second inductor at least partially overlap with the first coils of the first inductor, thereby coupling the first and second inductors and reducing a surface area occupied by the first and the second inductors; and
a second capacitor disposed between the output line and the ground line;
wherein the filter circuit has a predetermined stop-band, a predetermined pass-band cutoff frequency, and wherein the first and second inductors and the first and second capacitors steepen a slope of the roll-off and provide a notch at a stop-band frequency to obtain substantial attenuation beyond the cutoff frequency and minimum attenuation below the cutoff frequency.
2. The filter circuit according to claim 1 wherein the predetermined stop-band is provided between 800-950 MHz.
3. The filter circuit according to claim 1 wherein the predetermined stop-band is provided between 1.8-1.9 GHz.
4. The filter circuit according to claim 1 wherein the overlap between the first and the second inductors results in the first and the second inductors being entirely intertwined.
5. The filter circuit according to claim 1 , wherein each of the first and second capacitors, the first and second inductors, and connections therebetween are formed on an integrated device that has multiple layers.
6. The filter circuit according to claim 5 wherein the overlap between the first and the second inductors results in the first and the second inductors being entirely intertwined.
7. The filter circuit according to claim 6 wherein the first and second inductors are further formed so that the first inductor coils are positioned in gaps between the second inductor coils, thereby avoiding surface alignment of the first and second inductor coils and minimizing parasitic capacitance between the first and second inductors.
8. The filter circuit according to claim 7 wherein the first and second inductors are planar and are formed on different layers of the integrated device.
9. The filter circuit according to claim 8 wherein the first and the second capacitors are each formed within a surface area of the first and the second inductors.
10. The filter circuit according to claim 5 wherein the integrated device is a semiconductor device.
11. The filter circuit according to claim 10 the predetermined stop-band is provided between at least one of 800-950 MHz and 1.8-1.9 GHz.
12. The filter circuit according to claim 5 wherein the integrated device is a ceramic device.
13. The filter circuit according to claim 12 wherein the predetermined stop-band is provided between at least one of 800-950 MHz and 1.8-1.9 GHz.
14. The filter circuit according to claim 1 further including:
a third inductor having third coils disposed between the input line and the first inductor; and
a fourth inductor having fourth coils and having one end disposed between a node formed by the first inductor and the third inductor, and another end connected to the first capacitor,
wherein the third coils of the third inductor at least partially overlap with the fourth coils of the fourth inductor, thereby coupling the third and fourth inductors, reducing a surface area occupied by the third and the fourth inductors and creating a further attenuation frequency notch.
15. The filter circuit according to claim 14 wherein the third and fourth inductors, along with the first and second inductors and the first and the second capacitors create a wide stop-band corresponding to a predetermined attenuation amount.
16. The filter circuit according to claim 14 , wherein each of the first and second capacitors, the first, second, third and fourth inductors, and connections therebetween are formed on an integrated device that has multiple layers.
17. The filter circuit according to claim 16 wherein the overlap between the first and the second inductors results in the first and the second inductors being entirely intertwined and the overlap between the third and the fourth inductors results in the third and the fourth inductors being entirely intertwined.
18. The filter circuit according to claim 17 wherein:
the first and second inductors are further formed so that the first inductor coils are positioned in gaps between the second inductor coils, thereby avoiding surface alignment of the first and second inductor coils and minimizing parasitic capacitance between the first and second inductors; and
the third and fourth inductors are further formed so that the third inductor coils are positioned in other gaps between the fourth inductor coils, thereby avoiding surface alignment of the third and fourth inductor coils and minimizing parasitic capacitance between the third and fourth inductors.
19. The filter circuit according to claim 18 wherein the first and second inductors are planar and are formed on different layers of the integrated device; and
wherein the third and fourth inductors are planar and are formed on different layers of the integrated device.
20. The filter circuit according to claim 18 further including a third capacitor disposed between the input line and the ground line.
21. The filter circuit according to claim 20 , wherein each of the first, second and third capacitors, the first, second, third and fourth inductors, and connections therebetween are formed on an integrated device that has multiple layers.
22. The filter circuit according to claim 20 , wherein each of the first, second and third capacitors, the first, second, third and fourth inductors, and connections therebetween are formed on an integrated device that has multiple layers.
23. The filter circuit according to claim 17 wherein the first and second capacitors are each formed within a surface area of the first, second, third and fourth inductors.
24. The filter circuit according to claim 16 wherein the integrated device is a semiconductor device.
25. The filter circuit according to claim 24 wherein the predetermined stop-band is provided between at least one of 800-950 MHz and 1.8-1.9 GHz.
26. The filter circuit according to claim 24 wherein the predetermined stop-band is provided between at least one of 800-950 MHz and 1.8-1.9 GHz.
27. The filter circuit according to claim 16 wherein the integrated device is a ceramic device.
28. The filter circuit according to claim 1 further including a third capacitor disposed between the input line and the ground line.