Semiconductor manufacturing equipment and manufacturing method of the same
View Patent ↗A semiconductor manufacturing equipment includes a first chamber that has a first connection hole, a second chamber that has a second connection hole connected to the first connection hole of the first chamber, an O-ring that is provided between the first chamber and the second chamber so as to surround the first connection hole and the second connection hole, and a cover portion that covers a space between the first chamber and the second chamber.
1. A semiconductor manufacturing equipment comprising:
a first chamber comprising a first connection hole formed through a first wall;
a second chamber comprising a second connection hole formed through a second wall, wherein the first and second connection holes are coupled by a cover portion wherein a thickness of the cover portion is greater on the side of the first chamber than on the side of the second chamber; and
an O-ring that is provided between the first chamber and the second chamber so as to surround the first connection hole and the second connection hole, wherein the cover portion is configured to contact the first wall in the first connection hole and is spaced apart from the second wall in the second connection hole, to cover a space between the first chamber and the second chamber and shield the O-ring.
2. The semiconductor manufacturing equipment as claimed in claim 1 , wherein the cover portion is a tube that is provided in the first connection hole and in the second connection hole.
3. The semiconductor manufacturing equipment as claimed in claim 1 , wherein the cover portion has a taper shape in which a diameter of the cover portion is more reduced in the second connection hole than in the first connection hole.
4. The semiconductor manufacturing equipment as claimed in claim 1 , wherein:
the first chamber and the second chamber have a negative pressure; and
a degree of vacuum in the first chamber is lower than that in the second chamber.
5. The semiconductor manufacturing equipment as claimed in claim 1 , wherein the first chamber is a chamber for a plasma treatment.
6. The semiconductor manufacturing equipment as claimed in claim 5 , wherein the first chamber is a chamber for a high-density plasma treatment.
7. The semiconductor manufacturing equipment as claimed in claim 5 , wherein the first chamber is a chamber for CVD.
8. The semiconductor manufacturing equipment as claimed in claim 1 , wherein the first connection hole and the second connection hole are a connection hole where a wafer is carried between the first chamber and the second chamber.
9. The semiconductor manufacturing equipment as claimed in claim 8 , wherein:
the first chamber is a chamber for a process treatment to the wafer; and
the second chamber is a load lock chamber.
10. A semiconductor manufacturing method comprising:
providing an O-ring between a first chamber comprising a first connection hole formed through a first wall of said first chamber and a second chamber comprising a second hole formed through a second wall of said second chamber, whereby the O-ring is configured to surround the first connection hole and the second connection hole; and
providing a cover portion to connect the first connection hole and the second connection hole and cover a space between the first chamber and the second chamber whereby the cover portion is configured to contact the first wall in the first connection hole and is spaced apart from the second wall in the second connection hole, to shield the O-ring wherein a thickness of the cover portion is greater on the side of the first chamber than on the side of the second chamber.
11. The semiconductor manufacturing method of claim 10 , wherein the cover portion comprises a tube inserted into the first connection hole and into the second connection hole.
12. The semiconductor manufacturing method of claim 11 , comprising tapering the cover portion whereby diameter of the cover portion is more reduced in the second connection hole than in the first connection hole.
13. The semiconductor manufacturing method of claim 10 , comprising forming a negative pressure in the first chamber and the second chamber, whereby and a degree of vacuum in the first chamber is lower than that in the second chamber.
14. The semiconductor manufacturing method of claim 10 , comprising conducting plasma treatment in the first chamber.
15. The semiconductor manufacturing method of claim 10 , comprising conducting high-density plasma treatment in the first chamber.
16. The semiconductor manufacturing method of claim 10 , comprising conducting chemical vapor deposition (CVD) in the first chamber.
17. The semiconductor manufacturing method of claim 10 , comprising transporting a semiconductor wafer between the first chamber and the second chamber.