Method of forming a semiconductor structure comprising an implantation of ions of a non-doping element

1. A method of forming a semiconductor structure, comprising:

providing a semiconductor substrate comprising a first doped gate electrode and a second doped gate electrode, the first doped gate electrode comprising a first doped radon separated from a first gate insulation layer by a first depletion layer and the second doped gate electrode comprising a second doped region separated from a second gate insulation layer by a second depletion layer;

forming a mask over said substrate, said mask covering said first doped gate electrode;

performing an ion implantation process to introduce ions of a non-doping element into said second doped gate electrode, the non-doping element reducing dopant diffusion in said second doped gate electrode, and said mask being adapted to absorb ions impinging on said first doped gate electrode; and

performing an annealing process after said ion implantation process, wherein dopant diffusion in said second doped gate electrode is reduced relative to dopant diffusion in said first doped gate electrode by the presence of the non-doping element in said second doped gate electrode so that a first thickness of the first depletion layer is less than a second thickness of the second depletion layer following the annealing process.

2. The method of claim 1 , wherein said non-doping element comprises nitrogen, and wherein the ion implantation process is performed such that an implantation depth in said second doped gate electrode is smaller than a height of the second doped gate electrode.

3. The method of claim 2 , wherein said ion implantation process is performed at an ion energy in a range from about 1-20 keV, the ion energy being selected to reduce an extension of a region of reduced dopant concentration in said second gate electrode to a lesser extent relative to an extension of a region of reduced dopant concentration in said first gate electrode.

4. The method of claim 2 , wherein a dose of said ions is in a range from about 1×10 14 -4×10 15 ions/cm 2 , the dose being selected to reduce an extension of a region of reduced dopant concentration in said second gate electrode to a lesser extent relative to an extension of a region of reduced dopant concentration in said first gate electrode.

5. The method of claim 1 , wherein said first doped gate electrode comprises a gate electrode of a first transistor element and said second doped gate electrode comprises a gate electrode of a second transistor element, and wherein said first transistor element is an N-type transistor and said second transistor element is a P-type transistor.

6. The method of claim 1 , wherein said annealing process comprises flash lamp annealing.

7. The method of claim 1 , wherein said annealing process comprises laser annealing.

8. The method of claim 1 , further comprising performing a second ion implantation process adapted to introduce ions of a dopant material into said second doped gate electrode, said second ion implantation process being performed after said formation of said mask such that said mask protects said first doped gate electrode from being irradiated with said ions of said dopant material.

9. The method of claim 1 , wherein said provision of said semiconductor structure comprises doping said first doped gate electrode with a first dopant, doping said second doped gate electrode with a second dopant and performing a second annealing process, said doping of said first doped gate electrode, said doping of said second doped gate electrode and said second annealing process being performed before said formation of said mask.

10. A method of forming a semiconductor structure, comprising:

providing a substrate comprising a first transistor element comprising a first gate electrode and a second transistor element comprising a second gate electrode the first gate electrode comprising a first doped region separated from a first gate insulation layer by a first depletion layer and the second gate electrode comprising a second doped region separated from a second gate insulation layer by a second depletion layer;

forming a first mask over said substrate, said first mask covering said second transistor element;

irradiating said substrate with ions of a first dopant material;

removing said first mask;

forming a second mask over said substrate, said second mask covering said first transistor element;

irradiating said substrate with ions of a second dopant material;

irradiating said substrate with ions of a non-doping element to reduce dopant diffusion in said second doped gate electrode;

removing said second mask; and

performing an annealing process adapted to activate said first dopant material and said second dopant material, wherein dopant diffusion in said second gate electrode is reduced relative to dopant diffusion in said first gate electrode by the presence of the non-doping element in said second doped gate electrode so that a first thickness of the first depletion layer is less than a second thickness of the second depletion layer following the annealing process.

11. The method of claim 10 , wherein said non-doping element comprises nitrogen, and wherein the ion implantation process is performed such that an implantation depth in said second doped gate electrode is smaller than a height of the second doped gate electrode.

12. The method of claim 11 , wherein said ions of said non-doping element have an ion energy in a range from about 1-20 keV, the ion energy being selected to reduce an extension of a region of reduced dopant concentration in said second gate electrode to a lesser extent relative to an extension of a region of reduced dopant concentration in said first gate electrode.

13. The method of claim 11 , wherein a dose of said ions of said non-doping element is in a range from about 1×10 14 -4×10 15 ions/cm 2 , the dose being selected to reduce an extension of a region of reduced dopant concentration in said second gate electrode to a lesser extent relative to an extension of a region of reduced dopant concentration in said first gate electrode.

14. The method of claim 10 , wherein said first transistor element is an N-type transistor and said second transistor element is a P-type transistor.

15. The method of claim 10 , wherein said annealing process comprises flash lamp annealing.

16. The method of claim 10 , wherein said annealing process comprises laser annealing.

17. The method of claim 10 , further comprising performing a second annealing process, said second annealing process comprising at least one of furnace annealing and rapid thermal annealing.

18. A method of forming a semiconductor structure, comprising:

providing a substrate comprising a first transistor element comprising a first gate electrode comprising a first dopant in a first doped region separated from a first gate insulation layer by a first depletion layer and a second transistor element comprising a second gate electrode comprising a second dopant in a second doped region separated from a second gate insulation layer by a second depletion layer;

performing a first annealing process adapted to activate said first dopant and said second dopant;

forming a mask over said substrate, said mask covering said first transistor element;

performing an ion implantation process to introduce ions of a non-doping element into said second gate electrode to reduce diffusion of the second dopant in said second doped gate electrode, said mask being adapted to absorb ions impinging on said first transistor element; and

performing a second annealing process after said ion implantation process, wherein diffusion of the second dopant in said second gate electrode is reduced relative to diffusion of the first dopant in said first gate electrode by the presence of the non-doping element in said second doped gate electrode, so that a first thickness of the first depletion layer is less than a second thickness of the second depletion layer following the second annealing process.

19. The method of claim 18 , wherein said non-doping element comprises nitrogen, and wherein the ion implantation process is performed such that an implantation depth in said second doped gate electrode is smaller than a height of the second doped gate electrode.

20. The method of claim 18 , wherein said second annealing process comprises at least one of flash lamp annealing and laser annealing.