Integrated circuit including memory refreshed based on temperature

1. An integrated circuit comprising:

an array of memory cells, the array including word lines, each word line coupled to a plurality of memory cells; and

a first circuit configured to refresh memory cells along a first number of word lines in response to a refresh command, the first number of word lines based on a sensed temperature.

2. The integrated circuit of claim 1 , further comprising:

a second circuit configured to receive refresh commands at a constant rate independent of the sensed temperature.

3. The integrated circuit of claim 2 , wherein the first circuit is configured to refresh memory cells along the first number of word lines in response to each refresh command and a first sensed temperature, and to refresh memory cells along a second number of word lines in response to each refresh command and a second sensed temperature.

4. The integrated circuit of claim 3 , wherein the first temperature is less than the second temperature, and

wherein the first number of word lines is less than the second number of word lines.

5. The integrated circuit of claim 1 , further comprising:

a temperature sensor configured to sense a temperature of the integrated circuit to provide the sensed temperature.

6. The integrated circuit of claim 1 , wherein the array comprises an array of dynamic random access memory cells.

7. The integrated circuit of claim 1 , further comprising:

a storage device configured to store refresh parameters,

wherein the first number of word lines is based on the sensed temperature and the refresh parameters.

8. The integrated circuit of claim 7 , wherein the storage device comprises one of fuses and a non-volatile memory.

9. A system comprising:

a host including a memory controller, the memory controller configured to provide refresh commands at a constant rate; and

a memory device communicatively coupled to the host, the memory device comprising:

an array of memory cells, the array including word lines, each word line coupled to a plurality of memory cells;

a temperature sensor configured to sense a temperature of the memory device; and

a circuit configured to refresh memory cells along a first number of word lines in response to a first refresh command, the first number of word lines based on the sensed temperature.

10. The system of claim 9 , wherein the first number of word lines is based on a first sensed temperature, and

wherein the circuit is configured to refresh memory cells along a second number of word lines in response to a second refresh command, the second number of word lines based on a second sensed temperature.

11. The system of claim 10 , wherein the first temperature is less than the second temperature, and

wherein the first number of word lines is less than the second number of word lines.

12. The system of claim 9 , wherein the array comprises an array of dynamic random access memory cells.

13. The system of claim 9 , wherein the memory device further comprises:

a storage device configured to store refresh parameters,

wherein the first number of word lines is based on the sensed temperature and the refresh parameters.

14. The system of claim 13 , wherein the storage device comprises one of fuses and a non-volatile memory.

15. A method for operating a memory, the method comprising:

providing an array of memory cells, the array including word lines, each word line coupled to a plurality of memory cells;

issuing a first refresh command;

sensing a first temperature;

determining a first number of word lines to refresh based on the sensed first temperature; and

refreshing memory cells along the first number of word lines in response to the first refresh command.

16. The method of claim 15 , further comprising:

issuing refresh commands at a constant rate independent of a sensed temperature.

17. The method of claim 15 , further comprising:

issuing a second refresh command;

sensing a second temperature different from the first temperature;

determining a second number of word lines different from the first number to refresh based on the sensed second temperature; and

refreshing memory cells along the second number of word lines in response to the second refresh command.

18. The method of claim 17 , wherein sensing the second temperature comprises sensing a second temperature greater than the first temperature, and

wherein determining the second number of word lines comprises determining a second number of word lines greater than the first number.

19. The method of claim 15 , further comprising:

retrieving refresh parameters,

wherein determining the first number of word lines to refresh comprises determining the first number of word lines to refresh based on the sensed first temperature and the refresh parameters.

20. The method of claim 15 , wherein providing the array comprises providing an array of dynamic random access memory cells.