Wafer-level packaging cutting method capable of protecting contact pads
View Patent ↗A cutting method for wafer-level packaging capable of protecting the contact pad, in which several cavities and precutting lines are formed at the front surface of a cap wafer, and the depth of each precutting line is lesser than the thickness of the cap wafer, followed by the bonding of the cap wafer to the device wafer, which has several devices and several bonding pads disposed on the surface of the device wafer, followed by performing a wafer dicing process, along the precutting lines cutting through the cap wafer, and after removing a portion of the cap wafer that is not bonded to the device wafer, for exposing the bonding pads at the surface of the device wafer, and finally performing a dicing process for forming many packaged dies.
1. A cutting method for wafer-level packaging, comprising:
providing a cap wafer, and the cap wafer comprising a front surface and a back surface;
performing a surfacing process on the front surface of the cap wafer, and at the same time forming a plurality of cavities and a plurality of precutting lines in the cap wafer; and each of the precutting lines has a depth lesser than that of each of the cavities;
providing a device wafer, and a plurality of devices and a plurality of bonding pads are disposed on a surface of the device wafer;
bonding the cap wafer and the device wafer, and aligning the cavities to the devices for allowing a plurality of sealing chambers to be formed between the cap wafer and the device wafer, sealing each device, respectively;
performing a cap wafer dicing process at the back surface of the cap wafer, dicing the cap wafer along the precutting lines, and allowing the portion of the cap wafer not bonded to the device wafer to be detached for exposing the bonding pads of the device wafer; and
performing a device wafer dicing process, and forming a plurality of distinct packaged dies.
2. The cutting method of claim 1 , wherein the linewidth of the precutting line is less than 70 micrometers (μm).
3. The cutting method of claim 1 , wherein the surfacing process is an etching process.
4. The cutting method of claim 3 , wherein each of the precutting lines has a linewidth less than that of each of the cavities, and after performing the etching process, the depth of the precutting lines is less than the depth of the cavities.
5. The cutting method of claim 1 , wherein the cap wafer dicing process comprising an etching process.
6. The cutting method of claim 1 , wherein the cap wafer dicing process comprising of using a saw blade for performing the cap wafer dicing process.
7. The cutting method of claim 1 , further comprising of performing a wafer-level testing after the bonding pads of the device wafer are exposed.
8. A cutting method for wafer-level packaging, comprising:
providing a first wafer;
providing an adhesive layer, for bonding the back surface of the first wafer to a wafer carrier
performing a surfacing process using a front surface of the first wafer, and at the same time forming a plurality of cavity trenches and a plurality of precutting lines on the first wafer; the cavity trenches are disposed at between the precutting lines and are to surround a portion of the first wafer; and each of the precutting line has a depth lesser than that of each of the cavity trench;
removing the adhesive layer, the wafer carrier, and the portion of the first wafer surrounded by the cavity trenches;
bonding the back surface of the first wafer onto a second wafer for forming a cap wafer, and forming a plurality of cavities wherein defined at between the precutting lines at a front surface of the cap wafer;
providing a device wafer, and a plurality of devices and a plurality of bonding pads are disposed on a surface of the device wafer;
bonding the cap wafer and the device wafer, and making the cavities and the device wafer forming a plurality of sealing chambers, and respectively sealing the devices;
performing a cap wafer dicing process at the backside of the cap wafer, and dicing the cap wafer along the precutting lines, and allowing the portion of the cap wafer not bonded to the device wafer to be detached for exposing the bond pads of the device wafer;
performing a wafer-level testing; and
performing a device wafer dicing process for forming a plurality of distinct packaged dies.
9. The cutting method of claim 8 , wherein the second wafer comprising a glass wafer or a quartz wafer.
10. The cutting method of claim 8 , wherein linewidth of the precutting line is less than 70 micrometers (μm).
11. The cutting method of claim 8 , wherein the linewidth ratio for each of the cavities and each of the precutting line is less than 10 to 1.
12. The cutting method of claim 8 , wherein the surfacing process is an etching process.
13. The cutting method of claim 12 , wherein each of the precutting lines has a linewidth than that of each of the cavity trenches, and after the completion of the etching process, the depth of the precutting lines is lesser than the depth of the cavity trenches.
14. The cutting method of claim 8 , wherein the cap wafer dicing process comprising an etching process.
15. The cutting method of claim 8 , wherein the cap wafer dicing process comprising using a saw blade for performing the cap wafer dicing process.