Method and structure for controlling stress in a transistor channel
View Patent ↗A method for manufacturing a device including an n-type device and a p-type device. In an aspect of the invention, the method involves forming a shallow-trench-isolation oxide (STI) isolating the n-type device from the p-type device. The method further involves adjusting the shallow-trench-isolation oxide corresponding to at least one of the n-type device and the p-type device such that a thickness of the shallow-trench-isolation oxide adjacent to the n-type device is different from a thickness of the shallow-trench-isolation oxide adjacent to the p-type device, and forming a strain layer over the semiconductor substrate.
1. A semiconductor device, comprising:
a strain layer formed over n-type transistors and p-type transistors formed on a silicon substrate; and
a first shallow-trench-isolation oxide around each of the n-type transistors and a second shallow-trench-isolation oxide around each of the p-type transistors,
wherein an upper surface of the first shallow-trench-isolation oxide of the n-type transistors is at a level different than a level of an upper surface of the second shallow-trench-isolation oxide of the p-type transistors.
2. The device of claim 1 , wherein the strain layer comprises a compressive strain layer.
3. The device of claim 2 , wherein the upper surface of the first shallow-trench-isolation oxide of the n-type transistor is higher than an upper surface of the silicon substrate.
4. The device of claim 3 , wherein the upper surface of the first shallow-trench-isolation oxide of the n-type transistor is about 300 Angstroms to about 1000 Angstroms higher than the upper surface of the silicon substrate.
5. The device of claim 4 , wherein the upper surface of the second shallow-trench-isolation oxide of the p-type transistor is between being substantially planar to the upper surface of the silicon substrate to about 1000 Angstroms below the upper surface of the silicon substrate.
6. The device of claim 1 , wherein the strain layer comprises a tensile strain layer.
7. The device of claim 6 , wherein the upper surface of the second shallow-trench-isolation oxide of the p-type transistor is higher than an upper surface of the silicon substrate.
8. The device of claim 7 , wherein the upper surface of the second shallow-trench-isolation oxide of the p-type transistor is about 300 Angstroms to about 1000 Angstroms higher than the upper surface of the silicon substrate.
9. The device of claim 8 , wherein the upper surface of the first shallow-trench-isolation oxide of the n-type transistor is between being substantially planar to the upper surface of the silicon substrate to about 1000 Angstroms below the upper surface of the silicon substrate.
10. The device of claim 1 , wherein the strain layer has a thickness of about 250 Angstroms to about 1500 Angstroms.
11. The device of claim 1 , wherein compressive stresses of about 100 MPa to about 3 GPa exist within the channel of the p-type transistor.
12. The device of claim 1 , wherein tensile stresses of about 100 MPa to about 3 GPa exist within the channel of the n-type transistor.
13. The device of claim 1 , wherein the first shallow-trench-isolation oxide of each of the n-type transistor and the second shallow-trench-isolation oxide of each of the p-type transistor is about 200 Angstroms to about 1500 Angstroms from a corresponding gate of the n-type transistor or a corresponding gate of the p-type transistor, respectively.
14. The device of claim 1 , wherein the strain layer comprises an etch stop nitride film.
15. The device of claim 14 , further comprising a boron-phospho silicate glass (BPSG) layer formed on the etch stop nitride film.
16. The device of claim 1 , wherein the first shallow-trench-isolation oxide around each of the n-type transistors are at different locations on the semiconductor device from that of the second shallow-trench-isolation oxide around each of the p-type transistors.
17. The device of claim 1 , wherein:
the first shallow-trench-isolation oxide of each of the n-type transistors and the second shallow-trench-isolation oxide of each of the p-type transistors is a predetermined distance of about 200 Angstroms to about 1500 Angstroms from a corresponding gate of the n-type transistor or a corresponding gate of the p-type transistor, respectively, and
the predetermined distance of the first shallow-trench-isolation oxide is different from the predetermined distance of the second shallow-trench-isolation oxide.