IP Library Assignment 045650/0571
Patent Assignment
Reel/Frame 045650/0571

Assignment of Assignor's Interest

Recorded: 2018-04-27 Pages: 5
Assignor
AURIGA INNOVATIONS, INC.
Executed: 2018-03-28
Assignee
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
NO.8, LI-HSIN RD. 6, HSINCHU SCIENCE PARK, HSINCHU, 30078, TAIWAN
Covered Properties (18)
Method and Structure for Controlling Stress in a Transistor Channel
Patent: 7,381,609 →
Application: 10/707,841 →
Publication: US 2005/0158937
Patterned Strained Semiconductor Substrate and Device
Patent: 7,384,829 →
Application: 10/710,608 →
Publication: US 2006/0019462
Using Metal/Metal Nitride Bilayers as Gate Electrodes in Self-Aligned Aggressively Scaled Cmos Devices
Patent: 7,598,545 →
Application: 11/111,592 →
Publication: US 2006/0237796
Finfet Structure with Multiply Stressed Gate Electrode
Patent: 7,564,081 →
Application: 11/164,621 →
Publication: US 2007/0120154
Patterned Strained Semiconductor Substrate and Device
Patent: 7,682,859 →
Application: 11/931,836 →
Publication: US 2008/0061317
Patterned Strained Semiconductor Substrate and Device
Patent: 9,515,140 →
Application: 12/015,272 →
Publication: US 2008/0135874
Method and Structure for Controlling Stress in a Transistor Channel
Patent: 9,006,836 →
Application: 12/104,526 →
Publication: US 2008/0217696
Multiple Vt Field-Effect Transistor Devices
Patent: 8,110,467 →
Application: 12/427,247 →
Publication: US 2010/0264497
Finfet Structure with Multiply Stressed Gate Electrode
Patent: 8,058,157 →
Application: 12/505,894 →
Publication: US 2009/0280626
Using Metal/Metal Nitride Bilayers as Gate Electrodes in Self-Aligned Aggressively Scaled Cmos Devices
Patent: 7,999,323 →
Application: 12/542,087 →
Publication: US 2009/0302399
Semiconductor Device Having a Copper Plug
Patent: 8,610,283 →
Application: 12/573,183 →
Publication: US 2011/0079907
Patterned Strained Semiconductor Substrate and Device
Patent: 9,053,970 →
Application: 12/686,040 →
Publication: US 2010/0109049
Techniques for Enabling Multiple Vt Devices Using High-K Metal Gate Stacks
Patent: 8,212,322 →
Application: 12/720,354 →
Publication: US 2010/0164011
Multiple Vt Field-Effect Transistor Devices
Patent: 8,878,298 →
Application: 13/346,165 →
Publication: US 2012/0175712
Semiconductor Device Having a Copper Plug
Patent: 8,749,059 →
Application: 13/418,261 →
Publication: US 2012/0168952
Techniques for Enabling Multiple Vt Devices Using High-K Metal Gate Stacks
Patent: 8,680,623 →
Application: 13/433,815 →
Publication: US 2012/0181610
Semiconductor Device Having a Copper Plug
Patent: 8,741,769 →
Application: 13/767,845 →
Publication: US 2013/0157458
Semiconductor Device Having a Copper Plug
Patent: 8,922,019 →
Application: 14/069,282 →
Publication: US 2014/0054778
Related Assignments (2)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest Sep 3, 2015
From: INTERNATIONAL BUSINESS MACHINES CORPORATION
To: GLOBALFOUNDRIES U.S. 2 LLC
Reel/Frame 036550/0001 →
Assignment of Assignor's Interest Oct 5, 2015
From: GLOBALFOUNDRIES U.S. 2 LLC; GLOBALFOUNDRIES U.S. INC.
To: GLOBALFOUNDRIES INC.
Reel/Frame 036779/0001 →