Semiconductor device and method of forming embedded passive circuit elements interconnected to through hole vias

1. A method of making a semiconductor device, comprising:

creating a gap between a plurality of semiconductor die;

depositing a first insulating material in the gap;

removing a portion of the first insulating material to form a through hole via (THV);

depositing conductive material in the THV;

forming a second insulating layer over an active surface of the semiconductor die;

forming a first passive circuit element over the second insulating layer; and singulating the semiconductor wafer through the gap to separate the semiconductor die.

2. The method of claim 1 , further including forming a conductive layer over the semiconductor die and first insulating material to electrically connect the conductive material in the THV to a contact pad on the semiconductor die.

3. The method of claim 1 , further including:

forming a first passive via over the conductive material in the THV to electrically connect the first passive via to the conductive material in the THV; and

electrically connecting the first passive circuit element to the first passive via.

4. The method of claim 3 , further including:

forming a third insulating layer over the first passive circuit element;

forming a second passive circuit element over the third insulating layer; and

forming a fourth insulating layer over the second passive circuit element.

5. The method of claim 4 , further including:

forming a second passive via over the first passive via to electrically connect the second passive via to the first passive via; and

electrically connecting the second passive circuit element to the second passive via.

6. A method of making a semiconductor device, comprising:

providing a semiconductor wafer having a plurality of semiconductor die;

creating a gap between the semiconductor die;

depositing a first insulating material in the gap;

removing a portion of the first insulating material to form a through hole via (THV);

depositing a conductive material in the THV;

forming a second insulating layer over an active surface of the semiconductor die;

forming a first passive circuit element over the second insulating layer; and

singulating the semiconductor wafer through the gap to separate the semiconductor die.

7. The method of claim 6 , further including forming a conductive layer over the semiconductor die and the first insulating material to electrically connect the conductive material in the THV to a contact pad on the semiconductor die.

8. The method of claim 6 , further including:

forming a first passive via over the conductive material in the THV to electrically connect the first passive via to the conductive material in the THV; and

electrically connecting the first passive circuit element to the first passive via.

9. The method of claim 8 , further including:

forming a third insulating layer over the first passive circuit element;

forming a second passive circuit element over the third insulating layer; and

forming a fourth insulating layer over the second passive circuit element.

10. The method of claim 9 , further including:

forming a second passive via over the first passive via to electrically connect the second passive via to the first passive via; and

electrically connecting the second passive circuit element to the second passive via.

11. The method of claim 6 , wherein the first semiconductor wafer is singulated through the THV to form a conductive half via.

12. The method of claim 6 , wherein the first semiconductor wafer is singulated through the first insulating material to form a conductive full via.

13. A method of making a semiconductor device, comprising:

providing a semiconductor wafer having a plurality of semiconductor die;

creating a gap between the semiconductor die;

depositing a first insulating material in the gap;

removing a portion of the first insulating material to form a through hole via (THV);

depositing a conductive material in the THV;

forming a conductive layer over the semiconductor die and the first insulating material to electrically connect the conductive material in the THV to a contact pad on the semiconductor die;

forming a second insulating layer over an active surface of the semiconductor die;

forming a first passive circuit element over the second insulating layer;

forming a first passive via over the conductive material in the THV to electrically connect the first passive via to the conductive material in the THV;

electrically connecting the first passive circuit element to the first passive via; and

singulating the semiconductor wafer through the gap to separate the semiconductor die.

14. The method of claim 13 , further including:

forming a third insulating layer over the first passive circuit element;

forming a second passive circuit element over the third insulating layer; and

forming a fourth insulating layer over the second passive circuit element.

15. The method of claim 14 , further including:

forming a second passive via over the first passive via to electrically connect the second passive via to the first passive via; and

electrically connecting the second passive circuit element to the second passive via.

16. The method of claim 13 , wherein the first semiconductor wafer is singulated through the THV to form a conductive half via.

17. The method of claim 13 , wherein the first semiconductor wafer is singulated through the first insulating material to form a conductive full via.

18. The method of claim 13 , further including:

stacking a plurality of semiconductor die; and

electrically interconnecting the plurality of semiconductor die through the conductive vias.

19. The method of claim 13 , further including:

disposing a discrete device adjacent to semiconductor die; and

electrically connecting the discrete device to the conductive material in the THV.