Semiconductor device and method of forming recessed conductive vias in saw streets
View Patent ↗A semiconductor die has an insulating material disposed in a peripheral region around the die. A blind via is formed through the gap. A conductive material is deposited in the blind via to form a conductive via. A conductive layer is formed between the conductive via and contact pad on the semiconductor die. A protective layer is formed over the front side of the semiconductor die. A portion of the insulating material and conductive via is removed from a backside of the semiconductor die opposite the front side of the semiconductor die so that a thickness of the conductive via is less than a thickness of the semiconductor wafer. The insulating material and conductive via are tapered. The wafer is singulated through the gap to separate the semiconductor die. A plurality of semiconductor die can be stacked and electrically interconnected through the conductive vias.
1. A method of making a semiconductor device, comprising:
providing a semiconductor wafer having a plurality of semiconductor die, each semiconductor die having a contact pad formed on a front side of the die;
creating a gap between the semiconductor die;
depositing an insulating material in the gap;
removing a portion of the insulating material to form a via;
depositing conductive material in the via to form a conductive via;
forming a conductive layer between the conductive via and contact pad on the semiconductor die;
forming a protective layer over the front side of the semiconductor die;
removing a portion of the insulating material and conductive via from a backside of the semiconductor die opposite the front side of the semiconductor die so that a thickness of the conductive via is less than a thickness of the semiconductor wafer; and
singulating the semiconductor wafer through the gap to separate the semiconductor die.
2. The method of claim 1 , wherein the step of removing a portion of the insulating material and conductive via includes removing less than fifty percent of the thickness of the semiconductor wafer.
3. The method of claim 1 , wherein the step of removing a portion of the insulating material and conductive via includes tapering the conductive via.
4. The method of claim 1 , wherein the semiconductor wafer is singulated through the via to form a conductive half via.
5. The method of claim 1 , wherein the semiconductor wafer is singulated through the insulating material.
6. The method of claim 1 , further including:
stacking a plurality of semiconductor die; and
electrically interconnecting the plurality of semiconductor die through the conductive vias.
7. The method of claim 1 , further including disposing an optically active area in the semiconductor die.
8. The method of claim 7 , wherein the protective layer passes light to the optically active area of the semiconductor die.
9. A method of making a semiconductor device, comprising:
providing a semiconductor wafer having a plurality of semiconductor die;
creating a gap between the semiconductor die;
depositing an insulating material in the gap;
removing a portion of the insulating material to form a via;
depositing conductive material in the via to form a conductive via;
removing a portion of the insulating material and conductive via so that a thickness of the conductive via is less than a thickness of the semiconductor wafer; and
singulating the semiconductor wafer through the gap to separate the semiconductor die.
10. The method of claim 9 , further including:
forming a conductive layer between the conductive via and a contact pad on the semiconductor die; and
forming a protective layer over the semiconductor die.
11. The method of claim 9 , wherein the step of removing a portion of the insulating material and conductive via includes removing less than fifty percent of the thickness of the semiconductor wafer.
12. The method of claim 9 , wherein the step of removing a portion of the insulating material and conductive via includes tapering the conductive via.
13. The method of claim 9 , further including:
stacking a plurality of semiconductor die; and
electrically interconnecting the plurality of semiconductor die through the conductive vias.
14. The method of claim 10 , further including disposing an optically active area in the semiconductor die.
15. The method of claim 14 , wherein the protective layer passes light to the optically active area of the semiconductor die.
16. A method of making a semiconductor device, comprising:
creating a gap between a plurality of semiconductor die;
depositing an insulating material in the gap;
removing a portion of the insulating material to form a via;
depositing conductive material in the via to form a conductive via; and
removing a portion of the insulating material and conductive via so that a thickness of the conductive via is less than a thickness of the semiconductor die.
17. The method of claim 16 , further including:
forming a conductive layer between the conductive via and a contact pad on the semiconductor die; and
forming a protective layer over the semiconductor die.
18. The method of claim 16 , wherein the step of removing a portion of the insulating material and conductive via includes removing less than fifty percent of the thickness of the semiconductor die.
19. The method of claim 16 , wherein the step of removing a portion of the insulating material and conductive via includes tapering the conductive via.
20. The method of claim 16 , further including:
stacking a plurality of semiconductor die; and
electrically interconnecting the plurality of semiconductor die through the conductive vias.