Substrate with multi-layer interconnection structure and method of manufacturing the same

1. A method of packaging electronic devices, comprising:

providing a substrate;

adhering a region of the substrate to a first dielectric layer by treating the region of the substrate with an adhering method while leaving a remaining area of the substrate untreated;

sequentially stacking dielectric layers and metal layers on the substrate to form a multi-layer interconnection structure, wherein a first part of each metal layer is in contact with another metal layer, and wherein a second part of each metal layer is located between different dielectric layers;

electrically connecting at least one electronic device to the multi-layer interconnection structure;

packaging the electronic device with a sealing compound; and

cutting the multi-layer interconnection structure so that a multi-layer interconnection device having a packaged electronic device is separated from the substrate, wherein cutting lines are outside the treated region of the substrate.

2. The method of packaging electronic devices as described in claim 1 , wherein when there are a plurality of electronic devices, the step of applying a sealing compound on the plurality of electronic devices is to apply a sealing compound on specific areas of the substrate with multi-layer interconnection structure where the electronic devices are located, so that another remaining area has no sealing compound thereon, thereby maintaining the flexibility of the multi-layer interconnection device having packaged electronic devices.

3. A method of packaging electronic devices, comprising:

providing a substrate;

adhering a region of the substrate to a first dielectric layer by treating the region of the substrate with an adhering method while leaving a remaining area of the substrate untreated;

sequentially stacking dielectric layers and metal layers on the substrate to form a multi-layer interconnection structure, wherein a first part of each metal layer is in contact with another metal layer, and wherein a second part of each metal layer is located between different dielectric layers;

cutting the multi-layer interconnection structure so that a multi-layer interconnection device is separated from the substrate, wherein cutting lines are outside the treated region of the substrate;

electrically connecting at least one electronic device to the multi-layer interconnection device; and

packaging the electronic device with a sealing compound.

4. The method of packaging electronic devices as described in claim 3 , wherein when there are a plurality of electronic devices, the step of applying a sealing compound on the plurality of electronic devices is to apply a sealing compound on specific areas of the multi-layer interconnection device where the electronic devices are located, so that another remaining area has no sealing compound thereon, thereby maintaining the flexibility of the multi-layer interconnection device having packaged electronic devices.

5. A method of manufacturing multi-layer interconnection devices, comprising:

providing a substrate;

adhering a region of the substrate to a first dielectric layer by treating the region of the substrate with an adhering method while leaving a remaining area of the substrate untreated;

sequentially stacking dielectric layers and metal layers on the substrate to form a multi-layer interconnection structure, wherein a first part of each metal layer is in contact with another metal layer, and wherein a second part of each metal layer is located between different dielectric layers; and

cutting the multi-layer interconnection structure so that a multi-layer interconnection device is separated from the substrate, wherein cutting lines are outside the treated region of the substrate.

6. The method of manufacturing multi-layer interconnection devices as described in claim 5 , wherein the partial areas refer to a periphery region of the substrate.

7. The method of manufacturing multi-layer interconnection devices as described in claim 5 , wherein the partial areas are in a form of spots.

8. The method of manufacturing multi-layer interconnection devices as described in claim 5 , wherein the partial areas are in a form of grids.

9. The method of manufacturing multi-layer interconnection devices as described in claim 5 , wherein the multi-layer interconnection structure is flexible.

10. The method of manufacturing multi-layer interconnection devices as described in claim 5 , wherein the first dielectric layer comprises a polyimide and the substrate material is selected from a group consisting of a silicon, a silicon dioxide, a glass, a silicon nitride, and an aluminum, and wherein the adhering method in the adhering step is to apply a silane promoter.

11. The method of manufacturing multi-layer interconnection devices as described in claim 5 , wherein the first dielectric layer comprises a polyimide and the substrate material comprises a silicon, and wherein the adhering method in the adhering step is to coat with another dielectric layer.

12. The method of manufacturing multi-layer interconnection devices as described in claim 11 , wherein said another dielectric layer is a polyimide layer.

13. The method of manufacturing multi-layer interconnection devices as described in claim 5 , wherein the first dielectric layer comprises a polyimide and the substrate material is selected from a group consisting of a silicon, a silicon dioxide, a glass, a silicon nitride, an aluminum, and a ceramic, and wherein the adhering method in the adhering step is to form a chromium film by physical vapor deposition.