Leadless semiconductor chip carrier system

1. A method for manufacturing a semiconductor package system comprising:

providing a semiconductor die with bonding pad on the semiconductor die;

attaching the semiconductor die to an intermediate layer;

attaching one end of a bonding wire to the bonding pad;

forming a bonding ball at the other end of the bonding wire, the bonding ball being fully or partially embedded in the intermediate layer;

encapsulating the semiconductor die, the bonding pad, the bonding wire, and a portion of the bonding ball with a mold compound;

removing the intermediate layer, resulting in the bonding ball protruding from the exposed mold compound bottom surface; and

conditioning the bonding ball.

2. The method as claimed in claim 1 wherein attaching the semiconductor die to an intermediate layer includes attaching the semiconductor die to an etchable metal layer.

3. The method as claimed in claim 1 further comprising:

attaching solder ball to the bonding ball.

4. The method as claimed in claim 1 further comprising:

attaching the conditioned bonding ball to a package-in-package bonding ball of a first-type package-in-package semiconductor package.

5. The method as claimed in claim 1 further comprising:

attaching the bonding ball to a contact bonding ball of a discrete passive component of a second-type package-in-package semiconductor package, the bonding ball and the contact bonding ball together forming a contact stack; and

forming a contact spacing between two contact stacks.

6. A method for manufacturing a semiconductor package system comprising:

providing a semiconductor die with bonding pad on the semiconductor die;

attaching the semiconductor die to a penetrable layer and further attaching the penetrable layer to a support layer;

attaching one end of a bonding wire to the bonding pad;

forming a bonding ball at the other end of the bonding wire, the bonding ball being fully or partially embedded in the penetrable layer;

encapsulating the semiconductor die, the bonding pad, the bonding wire, and a portion of the bonding ball with a mold compound;

removing the penetrable layer and the support layer, resulting in the bonding ball protruding from the exposed mold compound bottom surface;

conditioning the bonding ball; and

attaching solder ball.

7. The method as claimed in claim 6 wherein conditioning the bonding ball includes pressing the bonding ball to form a flattened bonding ball.

8. The method as claimed in claim 6 wherein forming the bonding ball at the other end of the bonding wire includes forming the bonding ball at the other end of the bonding wire made out of aluminum.

9. The method as claimed in claim 6 wherein conditioning the bonding ball includes:

attaching a solder wettable layer to the bonding ball;

patterning the solder wettable layer; and

removing a portion of the solder wettable layer.

10. The method as claimed in claim 6 wherein conditioning the bonding ball includes:

depositing an insulating layer to the bottom surface;

patterning the insulating layer;

removing a portion of the insulating layer to expose the bonding ball;

depositing a solder wettable layer to the bottom surface;

patterning the solder wettable layer; and

removing a portion of the solder wettable layer.

11. A semiconductor package system comprising:

a die;

a bonding pad on the die;

a bonding wire with one end attached to the bonding pad;

a conditioned bonding ball formed at the other end of the bonding wire; and

a mold compound encapsulating the die, the bonding pad, the bonding wire, and a portion of the bonding ball, the bonding ball protruding from the exposed mold compound bottom surface.

12. The system as claimed in claim 11 wherein the bonding wire and the bonding ball are made out of copper.

13. The system as claimed in claim 11 further comprising a solder ball attached to the bonding ball.

14. The system as claimed in claim 11 further comprising:

a first-type package-in-package semiconductor package with the conditioned bonding ball, including the flattened bonding ball, attached to a package-in-package bonding ball of the first-type package-in-package semiconductor package.

15. The system as claimed in claim 11 further comprising:

a second-type package-in-package semiconductor package with the bonding ball attached to a contact bonding ball of a discrete passive component of the second-type package-in-package semiconductor package; and

a contact spacing formed between two contact stacks.

16. The system as claimed in claim 11 wherein:

the die is a semiconductor die; and

the bonding pad is on a semiconductor die; and

further comprising:

a solder ball attached to the conditioned bonding ball.

17. The system as claimed in claim 16 wherein the conditioned bonding ball is a flattened bonding ball.

18. The system as claimed in claim 16 wherein the conditioned bonding ball is made out of aluminum.

19. The system as claimed in claim 16 wherein the conditioned bonding ball is covered with a solder wettable layer.

20. The system as claimed in claim 16 wherein:

the conditioned bonding ball is covered with a solder wettable layer; and

the exposed mold compound bottom surface, the exposed die bottom surface, and one side of the solder wettable layer are covered by an insulating layer.