Methods for retaining metal-comprising materials using liquid chemistry dispense systems from which oxygen has been removed

1. A method for fabricating a semiconductor device from a semiconductor substrate having a metal-comprising material and a disposable material, the method comprising the steps of:

providing a system for exposing the disposable material to a liquid chemistry;

removing molecular oxygen (O 2 ) from the system;

exposing the disposable material to the liquid chemistry; and

removing the disposable material from the semiconductor substrate using the liquid chemistry and simultaneously leaving the metal-comprising material substantially in tact, wherein no more than 30 ppb of molecular oxygen (O 2 ) is exposed to the metal-comprising material while removing the disposable material.

2. The method of claim 1 , wherein the step of providing comprises providing a system having a container for storing the liquid chemistry and wherein the step of removing comprises performing an inert gas purge of the container.

3. The method of claim 1 , wherein the step of providing comprises providing a system having a container for holding the liquid chemistry and wherein the step of removing comprises inducing a vacuum within the container.

4. The method of claim 1 , wherein the step of providing comprises providing a system having a closed chamber within which to expose the semiconductor substrate to the liquid chemistry and wherein the step of removing comprises performing an inert gas purge of the closed chamber.

5. The method of claim 1 , wherein the step of removing comprises purging a surface of the semiconductor substrate with an inert gas.

6. The method of claim 1 , wherein the step of removing comprises removing molecular oxygen (O 2 ) from the liquid chemistry by flowing the liquid chemistry through a deoxygenation membrane.

7. The method of claim 1 , wherein the step of removing comprises removing molecular oxygen (O 2 ) from the liquid chemistry by subjecting the liquid chemistry to an oxygen scavenger.

8. The method of claim 1 , where in the step of exposing comprising spraying the liquid chemistry onto the semiconductor substrate.

9. The method of claim 1 , where in the step of exposing comprising submerging the semiconductor substrate into the liquid chemistry.

10. The method of claim 1 , wherein the disposable material is a photoresist and wherein the step of exposing comprises exposing the photoresist to a composition comprising SPM, PGMEA, DIW, or a solvent.

11. The method of claim 1 , wherein the disposable material is formed of a metal and wherein the step of exposing comprises exposing the metal to a composition comprising HCl, DIW, a solvent, or a liquid chemistry having a pH less than 7.

12. The method of claim 1 , wherein the metal-comprising material comprising a metal selected from the group consisting of lanthanum, aluminum, magnesium, ruthenium, titanium, titanium nitride, tantalum, tantalum nitride, tantalum carbide, and a combination thereof, and wherein the step of exposing comprises exposing the metal-comprising material to the liquid chemistry.

13. The method of claim 1 , where in the step of exposing comprising exposing the disposable material to a liquid chemistry having no more than 30 ppb of molecular oxygen (O 2 ).

14. A method for removing a disposable material from a semiconductor substrate, wherein the semiconductor substrate has a metal-comprising material, the method comprising:

removing molecular oxygen (O 2 ) from a surface of the semiconductor substrate;

applying a liquid chemistry to the disposable material and the metal-comprising material; and

removing the disposable material from the semiconductor substrate using the liquid chemistry without substantial removal of the metal-comprising material, wherein no more than 30 ppb of molecular oxygen (O 2 ) is exposed to the metal-comprising material while removing the disposable material.

15. The method of claim 14 , wherein the step of removing comprises purging the surface of the semiconductor substrate with an inert gas.

16. The method of claim 14 , wherein the step of removing comprises placing the semiconductor substrate within a closed chamber and inducing a vacuum within the closed chamber.

17. The method of claim 14 , wherein the step of applying comprises applying the liquid chemistry to a metal-comprising material comprising a metal selected from the group consisting of lanthanum, aluminum, magnesium, ruthenium, titanium, titanium nitride, tantalum, tantalum nitride, tantalum carbide, and a combination thereof.

18. A method for removing a disposable material from a semiconductor substrate, wherein the semiconductor substrate has a metal-comprising material, the method comprising:

removing molecular oxygen (O 2 ) from a liquid chemistry such that the liquid chemistry has no more than 30 ppb of dissolved molecular oxygen (O 2 );

exposing the disposable material to the liquid chemistry; and

removing the disposable material from the semiconductor substrate without substantial removal of the metal-comprising material, wherein no more than 30 ppb of molecular oxygen (O 2 ) is exposed to the metal-comprising material while removing the disposable material.

19. The method of claim 18 , wherein the step of removing comprises removing molecular oxygen (O 2 ) from the liquid chemistry using a deoxygenation membrane.

20. The method of claim 18 , wherein the step of removing comprises removing molecular oxygen (O 2 ) from the liquid chemistry using an oxygen scavenger.