Semiconductor device and method of forming high-frequency circuit structure and method thereof
A semiconductor device is made by providing an integrated passive device (IPD). Through-silicon vias (TSVs) are formed in the IPD. A capacitor is formed over a surface of the IPD by depositing a first metal layer over the IPD, depositing a resistive layer over the first metal layer, depositing a dielectric layer over the first metal layer, and depositing a second metal layer over the resistive and dielectric layers. The first metal layer and the resistive layer are electrically connected to form a resistor and the first metal layer forms a first inductor. A wafer supporter is mounted over the IPD using an adhesive material and a third metal layer is deposited over the IPD. The third metal layer forms a second inductor that is electrically connected to the capacitor and the resistor by the TSVs of the IPD. An interconnect structure is connected to the IPD.
1. A method of making a semiconductor device, comprising:
providing an integrated passive device (IPD);
forming through-silicon vias (TSVs) in the IPD;
forming a capacitor over a surface of the IPD by,
depositing a first metal layer over the IPD,
depositing a resistive layer over the first metal layer,
depositing a dielectric layer over the first metal layer, and
depositing a second metal layer over the resistive and dielectric layers, wherein the first metal layer and the resistive layer are electrically connected to form a resistor and the first metal layer forms a first inductor;
mounting a wafer supporter over the IPD using an adhesive material;
depositing a third metal layer over the IPD, the third metal layer forming a second inductor, the second inductor being electrically connected to the capacitor and the resistor by the TSVs of the IPD; and
connecting an interconnect structure to the IPD.
2. The method of claim 1 , including backgrinding a surface of the IPD to expose the TSVs by mechanical grinding, chemical-mechanical polishing (CMP), wet etching, or plasma etching.
3. The method of claim 1 , wherein the wafer supporter includes a wafer carrier, the wafer carrier having an adhesive layer or an encapsulant layer.
4. The method of claim 3 , wherein the adhesive layer is deposited using spin coating, lamination, or printing and includes a heat or an ultra-violet (UV) releasable adhesive.
5. The method of claim 3 , wherein the encapsulant layer is deposited by molding, printing, or lamination.
6. The method of claim 1 , wherein the wafer supporter includes a conductive material to provide electromagnetic interference (EMI) protection to the semiconductor device, or a heat sink.
7. The method of claim 1 , wherein the step of forming TSVs in the IPD and the step of depositing the first metal layer over the IPD are performed concurrently.
8. A method of making a semiconductor device, comprising:
providing an integrated passive device (IPD) having a plurality of through-silicon vias (TSVs);
forming a capacitor over a first surface of the IPD, the capacitor being electrically connected to a TSV of the IPD;
forming a resistor over the first surface of the IPD, the resistor being electrically connected to the capacitor;
forming an inductor over a second surface of the IPD opposite the first surface, the inductor being electrically connected to the capacitor and the resistor by the TSVs of the IPD; and
connecting an interconnect structure to the IPD.
9. The method of claim 8 , wherein forming a capacitor over a first surface of the IPD includes:
depositing a first metal layer over the IPD;
depositing a resistive layer over the first metal layer;
depositing a dielectric layer over the first metal layer; and
depositing a second metal layer over the resistive and dielectric layers, wherein the first metal layer and the resistive layer are electrically connected to form the resistor.
10. The method of claim 8 , including backgrinding a surface of the IPD to expose the TSVs by mechanical grinding, chemical-mechanical polishing (CMP), wet etching, or plasma etching.
11. The method of claim 8 , including mounting a temporary wafer carrier over the IPD using an adhesive material.
12. The method of claim 11 , wherein the wafer carrier includes a conductive wafer, insulation wafer, or polymer tape.
13. The method of claim 8 , wherein the interconnect structure includes a plurality of solder bumps.
14. A semiconductor device, comprising:
an integrated passive device (IPD) having a through-silicon via (TSV);
a capacitor formed over a first surface of the IPD, the capacitor being electrically connected to the TSV of the IPD;
a resistor formed over the first surface of the IPD, the resistor being electrically connected to the capacitor;
an inductor formed over a second surface of the IPD opposite the first surface, the inductor being electrically connected to the capacitor and the resistor by the TSV of the IPD; and
an interconnect structure connected to the IPD.
15. The semiconductor device of claim 14 , wherein the capacitor includes:
a first metal layer deposited over the IPD,
a resistive layer deposited over the first metal layer,
a dielectric layer deposited over the first metal layer, and
a second metal layer deposited over the resistive and dielectric layers, wherein the first metal layer and the resistive layer are electrically connected to form the resistor.
16. The semiconductor device of claim 14 , including a wafer carrier mounted over the IPD using an adhesive material.
17. The semiconductor device of claim 16 , wherein the wafer carrier includes a conductive material formed over an exposed surface of the wafer carrier to provide electromagnetic interference (EMI) protection to the semiconductor device.
18. The semiconductor device of claim 16 , wherein the wafer carrier includes a heat sink, thermal sheet, or heat spreader.