Granted Patent B2

US 8,637,986 · App. 12/256,333 · Granted Jan 28, 2014

Abstract

Claims (17)

1. A semiconductor device comprising:

a semiconductor chip;

a first electrode formed on the semiconductor chip;

a first material layer to which the semiconductor chip is mounted;

a second material layer;

a second semiconductor chip;

a second electrode formed on the second semiconductor chip having a protrusion formed therein wherein the second electrode and material formed inside of the protrusion to have slanted side surfaces have coplanar bottom surfaces, wherein a bottom surface of said material and a top surface of said material are parallel and said top surface is shorter in length than said bottom surface and wherein the protrusion of the second electrode is centered halfway between a pair of protrusions of the first electrode that extend in the direction toward the second electrode; and

a bonding terminal for bonding the first electrode and the second electrode.

2. The semiconductor device according to claim 1 , wherein the first electrode and second electrode are bonded to cover at least part of a side surface of the protrusion.

3. The semiconductor device according to claim 1 , wherein the bonding terminal is formed from a solder.

4. The semiconductor device according to claim 1 , wherein:

the bonding terminal is formed from a metal post and a solder layer; and

the solder layer is formed on a surface of the metal post opposite to the second electrode.

5. The semiconductor device according to claim 1 , wherein:

the semiconductor chip includes a material layer;

the material layer is disposed at a lower portion of the protrusion; and

the material layer has a thermal conductivity lower than that of a surface of the second electrode.

Assignments (8)