Observation method of wafer ion implantation defect
View Patent ↗An analysis method of wafer ion implant is presented, the steps of the method comprises: (a) cleave a wafer for analysis, and (b) from these pieces of wafers determine which ones are wafer with defect and set an insulator on the wafer with defect, (c) finally, use scanning electron microscope to observe whether the ion implant on the wafer with defect was correct or not. Whereby, engineers can take less time to analyze whether the ion implant of the wafer is correct or not with 100% repeatability.
1. An observation method of wafer ion implantation defect, comprising the following steps:
cleaving a wafer into multiple pieces of wafers;
selecting a piece of wafer with defect as a sample, and setting an insulator on the surface thereof;
using a scanning electron microscope to observe whether the ion implantation of the sample is successful.
2. The observation method of wafer ion implantation defect according to claim 1 , wherein the insulator is an insulating tape, and the insulating tape is set on the surface of the sample.
3. The observation method of wafer ion implantation defect according to claim 1 , wherein the insulator is an insulating tape, and the insulating tape wraps the sample.
4. The observation method of wafer ion implantation defect according to claim 1 , wherein the insulator is a photoresist, and the photoresist is dispersed on the surface of the piece of wafer with defect.
5. The observation method of wafer ion implantation defect according to claim 1 , wherein the insulator is epoxy resin.
6. The observation method of wafer ion implantation defect according to claim 5 , wherein the epoxy resin is set on the surface of the sample.
7. The observation method of wafer ion implantation defect according to claim 1 , wherein the acceleration voltage range of the electron microscope is set to be within 1000 volts˜3000 volts.
8. The observation method of wafer ion implantation defect according to claim 1 , wherein the working distance range of the electron microscope is set to be between 1.5 mm˜8 mm.
9. An observation method of wafer ion implantation defect, comprising the following steps:
sampling a wafer;
cleaving the wafer and forming multiple pieces of wafers;
selecting a piece of wafer with defect as a sample;
setting an insulating tape on the sample; and
placing the sample installed with the insulating tape under a scanning electron microscope to observe the state of the ion implantation on the wafer with defect.
10. The observation method of wafer ion implantation defect according to claim 9 , wherein the wafer is cloven into multiple pieces of wafer by hand.
11. The observation method of wafer ion implantation defect according to claim 9 wherein the wafer is broken into multiple pieces of wafer by hand.
12. The observation method of wafer ion implantation defect according to claim 9 ,
wherein the wafer is cloven into multiple pieces of wafer by using a cutting machine.
13. The observation method of wafer ion implantation defect according to claim 9 ,
wherein the insulating tape is set on the upper surface of the piece of wafer with defect.
14. The observation method of wafer ion implantation defect according to claim 9 , wherein the insulating tape wraps the piece of wafer with defect.