IP Library Assignment 041675/0105
Patent Assignment
Reel/Frame 041675/0105

Supplement No. 3 to Patent Security Agreement

Recorded: 2017-02-10 Pages: 31
Assignor
MICRON TECHNOLOGY, INC.
Executed: 2017-01-24
Assignee
MORGAN STANLEY SENIOR FUNDING, INC.
1300 THAMES STREET, 4TH FLOOR, BALTIMORE, MARYLAND, 21231
Covered Properties (310)
Method for Packaging Circuits
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Memory Arrays
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Program and Read Trim Setting
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Block or Page Lock Features in Serial Interface Memory
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High Aspect Ratio Openings
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Semiconductor with Through-Substrate Interconnect
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Methods of Forming Diodes
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Stacked Memory Devices, Systems, and Methods
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Publication: US US20170115893A1
Memory Bank Signal Coupling Buffer and Method
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Semiconductor Substrates with Unitary Vias and via Terminals, and Associated Systems and Methods
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Access Line Management in a Memory Device
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Conditional Operation in an Internal Processor of a Memory Device
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Methods and Apparatuses for Reducing Power Consumption in a Pattern Recognition Processor
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Ohmic Contacts for Semiconductor Structures
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Line Termination Methods
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Light Emitting Devices with Built-in Chromaticity Conversion and Methods of Manufacturing
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Solid State Lighting Devices with Reduced Crystal Lattice Dislocations and Associated Methods of Manufacturing
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Sense Operation Flags in a Memory Device
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Programmable Device, Heirarchical Parallel Machines, and Methods for Providing State Information
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Solid State Lighting Devices with Accessible Electrodes and Methods of Manufacturing
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Apparatus Including Gettering Agents in Memory Charge Storage Structures
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Memory Devices Having Source Lines Directly Coupled to Body Regions and Methods
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Solid State Optoelectronic Device with Plated Support Substrate
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External Gettering Method and Device
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Methods of Forming Conductive Elements of Semiconductor Devices and of Forming Memory Cells
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Stack Of Horizontally Extending And Vertically Overlapping Features, Methods Of Forming Circuitry Components, And Methods Of Forming An Array Of Memory Cells
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Conductive Structures, Systems and Devices Including Conductive Structures and Related Methods
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Semiconductor Constructions
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Methods of Forming and Using Fuses
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Publication: US US20170047187A1
Memory Cells Including a Metal Chalcogenide Material and Related Methods
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Memory Management for a Hierarchical Memory System
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Publication: US US20170083452A1
Boolean Logic in a State Machine Lattice
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Methods and Systems for Power Management in a Pattern Recognition Processing System
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Stair Step Formation Using at Least Two Masks
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Clamp Elements for Phase Change Memory Arrays
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Apparatuses and Methods for Providing Data from a Buffer
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Publication: US US20170083263A1
Sequence Power Control
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Publication: US US20170102759A1
Multi-Junction Solid State Transducer Devices for Direct Ac Power and Associated Systems and Methods
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Arrays of Memory Cells and Methods of Forming an Array of Memory Cells
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Publication: US US20170092695A1
Method of Assembly Semiconductor Device with Through-Package Interconnect
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Autorecovery After Manufacturing/System Integration
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Publication: US US20170133105A1
Apparatuses Having a Ferroelectric Field-Effect Transistor Memory Array and Related Method
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Publication: US US20170098660A1
Integrated Circuitry and Methods of Forming Transistors
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Publication: US US20170069538A1
Vertical Ferroelectric Field Effect Transistor Constructions, Constructions Comprising A Pair Of Vertical Ferroelectric Field Effect Transistors, Vertical Strings Of Ferroelectric Field Effect Transistors, And Vertical Strings Of Laterally Opposing Pairs Of Vertical Ferroelectric Field Effect Transistors
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Publication: US US20170117295A1
Comparison Operations in Memory
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Methods and Apparatuses Having Strings of Memory Cells and Select Gates with Double Gates
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Publication: US US20170076808A1
Cross-Point Memory and Methods for Fabrication of Same
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Publication: US US20170186816A1
Semiconductor Devices and Packages and Methods of Forming Semiconductor Device Packages
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Publication: US US20170069603A1
Semiconductor Device Assemblies Including Intermetallic Compound Interconnect Structures
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Publication: US US20170062365A1
Semiconductor Device Packages with Improved Thermal Management and Related Methods
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Apparatuses and Methods of Reading Memory Cells
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Publication: US US20170186487A1
Apparatuses and Methods for Setting a Signal in Variable Resistance Memory
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Publication: US US20170103794A1
Soft Post Package Repair of Memory Devices
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Magnetic Tunnel Junctions, Methods Used While Forming Magnetic Tunnel Junctions, and Methods of Forming Magnetic Tunnel Junctions
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Comparison Operations in Memory
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Publication: US US20170133066A1
Methods of Forming Resistive Memory Elements
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Apparatuses and Methods for Storing a Data Value in Multiple Columns
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Publication: US US20170117020A1
Transistors and Memory Arrays
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Transistors and Methods of Forming Transistors
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Publication: US US20170104155A1
Bonding Pads with Thermal Pathways
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Publication: US US20170053881A1
Estimating an Error Rate Associated with Memory
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Publication: US US20170097859A1
Secure Subsystem
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Publication: US US20170098102A1
Offset Compensation for Ferroelectric Memory Cell Sensing
Patent: 9,858,978 →
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Publication: US US20170263302A1
Apparatuses and Methods for Asymmetric Bi-Directional Signaling Incorporating Multi-Level Encoding
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Publication: US US20170132162A1
Graph Traversal Using Automata Processor
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Stacked Semiconductor Die Assemblies with High Efficiency Thermal Paths and Molded Underfill
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Publication: US US20180108592A1
System and Method for Write Data Bus Control in a Stacked Memory Device
Application: 15/365,563 →
Publication: US US20180151207A1
Memory Devices Which Include Memory Arrays
Application: 15/390,959 →
Publication: US US20180182761A1
Boolean Satisfiability
Application: 62/410,722 →
Apparatuses and Methods for Memory Alignment
Application: 15/349,492 →
Publication: US US20180136871A1
Memory Arrays Comprising Ferroelectric Capacitors
Patent: 9,847,337 →
Application: 15/391,699 →
Voltage Generation Circuit
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Publication: US US20180226107A1
Memory Arrays
Patent: 9,773,728 →
Application: 15/391,025 →
Memory Arrays
Application: 15/391,138 →
Publication: US US20180182762A1
Methods of Forming Patterns, and Apparatuses Comprising Finfets
Patent: 9,853,027 →
Application: 15/391,405 →
Apparatuses and Methods for Single Level Cell Caching
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Publication: US US20180121128A1
Memory Arrays
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Publication: US US20180182763A1
Timing Based Arbiter Systems and Circuits for Zq Calibration
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Wireless Devices and Systems Including Examples of Mixing Input Data with Coefficient Data
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Publication: US US20180152330A1
Conductive Structures, Wordlines and Transistors
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Publication: US US20180138182A1
Apparatuses and Methods for Dynamic Voltage and Frequency Switching for Dynamic Random Access Memory
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Publication: US US20170169875A1
Two-Step Data-Line Precharge Scheme
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Publication: US US20180137899A1
Apparatuses and Methods for Calibrating Adjustable Impedances of a Semiconductor Device
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Apparatus and Method for a Pvt Independent Rc Delay
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Publication: US US20180167057A1
Memory Cells and Methods of Forming a Capacitor
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Publication: US US20180197870A1
Apparatuses and Methods for a Memory Device with Dual Common Data I/O Lines
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Methods of Forming Memory Arrays
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Publication: US US20180182765A1
Interconnect Structure with Nitrided Barrier
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Publication: US US20180204803A1
Semiconductor Devices Comprising Nitrogen-Doped Gate Dielectric
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Wireless Devices and Systems Including Examples of Mixing Coefficient Data Specific to a Processing Mode Selection
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Application: 15/365,397 →
Wireless Devices and Systems Including Examples of Cross Correlating Wireless Transmissions
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Publication: US US20180167194A1
Apparatus and Method of Power Transmission Sensing for Stacked Devices
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Publication: US US20180158800A1
Apparatuses and Methods for Power Efficient Driver Circuits
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Uniform Electrochemical Plating of Metal Onto Arrays of Pillars Having Different Lateral Densities and Related Technology
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Apparatuses and Methods for High Speed Writing Test Mode for Memories
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Publication: US US20180204630A1
Floating Body Transistors and Memory Arrays Comprising Floating Body Transistors
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Identifying Asynchronous Power Loss
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Methods of Forming Integrated Circuitry
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Custom Compute Cores in Integrated Circuit Devices
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Error Correction to Reduce a Failure in Time Rate
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Publication: US US20180196614A1
Semiconductor Die Assembly Having Heat Spreader That Extends Through Underlying Interposer and Related Technology
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Publication: US US20180174943A1
Apparatuses and Methods for Compute Components Formed Over an Array of Memory Cells
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Integrated Structures
Patent: 9,773,882 →
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Cell Disturb Prevention Using a Leaker Device to Reduce Excess Charge from an Electronic Device
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Publication: US US20180122816A1
Apparatuses Including Memory Cells and Methods of Operation of Same
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Publication: US US20180122468A1
Semiconductor Devices with Underfill Control Features, and Associated Systems and Methods
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Publication: US US20180122762A1
Memory Cells, Integrated Structures and Memory Arrays
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Publication: US US20180204849A1
Board Edge Connector
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Publication: US US20180166811A1
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Publication: US US20180137922A1
Wiring with External Terminal
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Publication: US US20180130739A1
Methods of Forming an Array Comprising Pairs of Vertically Opposed Capacitors and Arrays Comprising Pairs of Vertically Opposed Capacitors
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Publication: US US20180122817A1
Magnetic Memory Device with Grid-Shaped Common Source Plate, System, and Method of Fabrication
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Publication: US US20180190713A1
Multiferroic Magnetic Tunnel Junction Devices
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Publication: US US20180151798A1
Memory Management
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Publication: US US20180129575A1
Integrated Memory
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Publication: US US20180197949A1
Methods Of Forming An Array Of Capacitors, Methods Of Forming An Array Of Memory Cells Individually Comprising A Capacitor And A Transistor, Arrays Of Capacitors, And Arrays Of Memory Cells Individually Comprising A Capacitor And A Transistor
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Data Shift Apparatuses and Methods
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Memory Cells, Arrays Of Two Transistor-One Capacitor Memory Cells, Methods Of Forming An Array Of Two Transistor-One Capacitor Memory Cells, And Methods Used In Fabricating Integrated Circuitry
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Directed Sanitization of Memory
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Apparatus and Methods for via Connection with Reduced via Currents
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Data Relocation in Hybrid Memory
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Memory Operations on Data
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Publication: US US20180129423A1
Methods of Forming an Array Comprising Pairs of Vertically Opposed Capacitors and Arrays Comprising Pairs of Vertically Opposed Capacitors
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Arrays Of Memory Cells Individually Comprising A Capacitor And An Elevationally-Extending Transistor, Methods Of Forming A Tier Of An Array Of Memory Cells, And Methods Of Forming An Array Of Memory Cells Individually Comprising A Capacitor And An Elevationally-Extending Transistor
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Methods of Forming an Array Comprising Pairs of Vertically Opposed Capacitors and Arrays Comprising Pairs of Vertically Opposed Capacitors
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Memory Protocol
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Apparatuses and Methods for Providing Internal Clock Signals of Different Clock Frequencies in a Memory Device
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Semiconductor Device and Error Correction Method
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Output Buffer Circuit with Low Sub-Threshold Leakage Current
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Semiconductor Device Including Subword Driver Circuit
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Device Having Multiple Switching Buffers for Data Paths Controlled Based on Io Configuration Modes
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Buffer Operations in Memory
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Apparatuses and Methods to Control Body Potential in 3D Non-Volatile Memory Operations
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Object Carrier Transport System and Method of Transporting Object Carriers
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Cylinder-Shaped Storage Node with Single-Layer Supporting Structure
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Transistor Structure and Method of Manufacturing the Same
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Semiconductor Devices Comprising Gate Structure Sidewalls Having Different Angles
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Semiconductor Device
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Recess Array Device with Reduced Contact Resistance
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Overhead Traveling Vehicle, Transportation System with the Same, and Method of Operating the Same
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Electrostatic Chuck and Temperature-Control Method for the Same
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Method for Fabricating a Semiconductor Device
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Three-Way Valve and Method for Using the Same
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Methods of Forming Semiconductor Packages Including Molding Semiconductor Chips of the Semiconductor Packages
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Semiconductor Structure Having a Patterned Surface Structure and Semiconductor Chips Including Such Structures
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Methods of Manufacturing a Multi-Device Package
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Methods of Fabricating a Semiconductor Package Structure Including at Least One Redistribution Layer
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Wafer Level Package and Fabrication Method Thereof
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Package-On-Package Assembly and Method for Manufacturing the Same
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Semiconductor Devices Including Dummy Chips
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Wafer Level Package with Tsv-Less Interposer
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Method for Fabricating Semiconductor Package
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Memory Device and Fabricating Method Thereof
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Memory Device and Fabricating Method Thereof
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Fan-Out Wafer Level Packaging and Manufacturing Method Thereof
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Methods of Fabricating a Semiconductor Structure
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Method for Manufacturing a Package-on-Package Assembly
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Package-On-Package Assembly and Method for Manufacturing the Same
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Semiconductor Structure Including a Capacitor Structure and Fabricating Method Thereof
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Wafers Having a Die Region and a Scribe-Line Region Adjacent to the Die Region
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Method for Fabricating a Memory Device Having Two Contacts
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Fault Isolation System and Method for Detecting Faults in a Circuit
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Method for Forming a Patterned Layer
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Development Apparatus and Method for Developing Photoresist Layer on Wafer Using the Same
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Method of Forming Patterns
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Method of Forming Patterns
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Semiconductor Package with Double Side Molding
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Method of Fabricating a Wafer Level Package
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Method of Forming Patterns
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Semiconductor Memory Device Having Enlarged Cell Contact Area and Method of Fabricating the Same
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Method of Fabricating Semiconductor Memory Device Having Enlarged Cell Contact Area
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Method for Fabricating Wafer Level Package
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Semiconductor Package with Sidewall-Protected Rdl Interposer and Fabrication Method Thereof
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Semiconductor Package with Sidewall-Protected Rdl Interposer
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Conductive Pads Forming Method
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Semiconductor Package and Fabrication Method Thereof
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Semiconductor Package with Multiple Coplanar Interposers
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Semiconductor Memory Device Having Coplanar Digit Line Contacts and Storage Node Contacts in Memory Array and Method for Fabricating the Same
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Semiconductor Package and Fabrication Method Thereof
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Wafer Level Package Utilizing Molded Interposer
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Microelectronic Package Utilizing Embedded Bridge Through-Silicon-via Interconnect Component and Related Methods
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System and Method for Detecting Fault Events
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Semiconductor Package and Fabrication Method Thereof
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Multi-Chip Semiconductor Package with via Components and Method for Manufacturing the Same
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Methods of Operating Storage Systems Including Encrypting a Key Salt
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Efficient Operations of Components in a Wireless Communications Device
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Phase Change Memory Device with Voltage Control Elements
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Persistent Content in Nonvolatile Memory
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Phase Change Memory in a Dual Inline Memory Module
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Memory Cells and Methods of Forming Memory Cells
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Related Assignments (9)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest May 16, 2014
From: KIEHLBAUCH, MARK W.
To: MICRON TECHNOLOGY, INC.
Reel/Frame 032911/0808 →
Assignment of Assignor's Interest Nov 29, 2016
From: KIRBY, KYLE K.; PAREKH, KUNAL R.
To: MICRON TECHNOLOGY, INC.
Reel/Frame 040450/0391 →
Assignment of Assignor's Interest Feb 27, 2017
From: INOTERA MEMORIES, INC.
To: MICRON TECHNOLOGY, INC.
Reel/Frame 041820/0815 →
Assignment of Assignor's Interest Jun 25, 2018
From: KALAVADE, PRANAV; RAJWADE, SHANTANU
To: MICRON TECHNOLOGY, INC.
Reel/Frame 046193/0060 →
Security Interest Jul 13, 2018
From: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 047540/0001 →
Release of Security Interest Oct 9, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050695/0825 →
Release of Security Interest Nov 12, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
Reel/Frame 051028/0001 →
Assignment of Assignor's Interest Aug 10, 2023
From: MICRON TECHNOLOGY, INC.
To: LODESTAR LICENSING GROUP, LLC
Reel/Frame 064551/0025 →
Assignment of Assignor's Interest Sep 21, 2023
From: MICRON TECHNOLOGY, INC.
To: LODESTAR LICENSING GROUP, LLC
Reel/Frame 064988/0923 →