Conductive structures, wordlines and transistors

1. A conductive structure, comprising:

a first conductive material having a work function of at least 4.5 eV;

a second conductive material over and directly against the first conductive material, and having a work function of less than 4.5 eV; the second conductive material being shaped as an upwardly-opening container;

a third conductive material within the upwardly-opening container shape of the second conductive material and being directly against the second conductive material;

the third conductive material being a different composition relative to the second conductive material; and

wherein the first conductive material comprises one or more of TiN, TaN and WN; where the formulas indicate primary constituents rather than specific stoichiometries.

2. A conductive structure, comprising:

a first conductive material having a work function of at least 4.5 eV;

a second conductive material over and directly against the first conductive material, and having a work function of less than 4.5 eV; the second conductive material being shaped as an upwardly-opening container;

a third conductive material within the upwardly-opening container shape of the second conductive material and being directly against the second conductive material; the third conductive material being a different composition relative to the second conductive material; and

wherein the second conductive material comprises one or more of WSiCN, TiSiN, WSiN, TiSiCN and TiAlN; where the formulas indicate primary constituents rather than specific stoichiometries.

3. The conductive structure of claim 2 wherein the third conductive material comprises one or more of Ir, Ru, Rh, Ti and W.

4. A conductive structure, comprising:

a first conductive material having a work function of at least 4.5 eV;

a second conductive material over and directly against the first conductive material, and having a work function of less than 4.5 eV; the second conductive material being shaped as an upwardly-opening container;

a third conductive material within the upwardly-opening container shape of the second conductive material and being directly against the second conductive material; the third conductive material being a different composition relative to the second conductive material; wherein the third conductive material comprises one or more of Ir, Ru, Rh, Ti and W; and

wherein the third conductive material further comprises one or more of Al, C, N and Si.

5. The conductive structure of claim 4 extending into a recess within a semiconductor material.

6. The conductive structure of claim 4 extending into a recess within a semiconductor material, and being spaced from the semiconductor material by dielectric material.

7. A conductive structure, comprising:

a first conductive material having a work function of at least 4.5 eV;

a second conductive material over and directly against the first conductive material, and having a work function of less than 4.5 eV; the second conductive material being shaped as an upwardly-opening container;

a third conductive material within the upwardly-opening container shape of the second conductive material and being directly against the second conductive material; the third conductive material being a different composition relative to the second conductive material; and

wherein the first conductive material is part of a conductive block which includes a fourth conductive material in combination with the first conductive material; the conductive block having an outer peripheral surface which includes an upper surface; the upper surface comprising regions of the first and fourth conductive materials, and the second conductive material being over and directly against the upper surface of the conductive block; all portions of the outer peripheral surface of the conductive block besides the upper surface only comprising the first conductive material.

8. The conductive structure of claim 7 wherein the third and fourth conductive materials are a same composition as one another.

9. A wordline, comprising:

a first conductive material comprising one or both of TaN and WN; where the formulas indicate primary constituents rather than specific stoichiometries;

a second conductive material over and directly against the first conductive material, and having a work function of less than a work function of the first conductive material; the second conductive material being shaped as an upwardly-opening container; and

a third conductive material within the upwardly-opening container shape of the second conductive material and being directly against the second conductive material; the third conductive material being a different composition relative to the second conductive material.

10. A wordline, comprising:

a first conductive material comprising one or more of TiN, TaN and WN; where the formulas indicate primary constituents rather than specific stoichiometries;

a second conductive material over and directly against the first conductive material, and having a work function of less than a work function of the first conductive material; the second conductive material being shaped as an upwardly-opening container;

a third conductive material within the upwardly-opening container shape of the second conductive material and being directly against the second conductive material; the third conductive material being a different composition relative to the second conductive material; and

wherein the second conductive material comprises one or more of WSiCN, TiSiN, WSiN, TiSiCN and TiAlN; where the formulas indicate primary constituents rather than specific stoichiometries.

11. The wordline of claim 10 wherein the third conductive material comprises one or more of Ir, Ru, Rh, Ti and W.

12. A wordline, comprising:

a first conductive material comprising one or more of TiN, TaN and WN; where the formulas indicate primary constituents rather than specific stoichiometries;

a second conductive material over and directly against the first conductive material, and having a work function of less than a work function of the first conductive material; the second conductive material being shaped as an upwardly-opening container;

a third conductive material within the upwardly-opening container shape of the second conductive material and being directly against the second conductive material; the third conductive material being a different composition relative to the second conductive material; wherein the third conductive material comprises one or more of Ir, Ru, Rh, Ti and W; and

wherein the third conductive material further comprises one or more of Al, C, N and Si.

13. A wordline, comprising:

a first conductive material comprising one or more of TiN, TaN and WN; where the formulas indicate primary constituents rather than specific stoichiometries;

a second conductive material over and directly against the first conductive material, and having a work function of less than a work function of the first conductive material; the second conductive material being shaped as an upwardly-opening container;

a third conductive material within the upwardly-opening container shape of the second conductive material and being directly against the second conductive material; the third conductive material being a different composition relative to the second conductive material; and

wherein the first conductive material comprises TiN, the second conductive material comprises WSiCN and/or TiSiN, and the third conductive material consists of W and/or Ti; where the formulas indicate primary constituents rather than specific stoichiometries.

14. A transistor, comprising:

a gate recessed into a semiconductor material, and spaced from the semiconductor material by gate dielectric material;

a first source/drain region extending within the semiconductor material on one side of the gate, and a second source/drain region extending within the semiconductor material on another side of the gate; the first and second source/drain regions being spaced from the gate by the gate dielectric material; and

wherein the gate comprises:

a first conductive material comprising one or more of TiN, TaN and WN, where the formulas indicate primary constituents rather than specific stoichiometries;

a second conductive material over and directly against the first conductive material; the second conductive material comprising one or more of WSiCN, TiSiN, WSiN, TiSiCN and TiAlN, where the formulas indicate primary constituents rather than specific stoichiometries; and

a third conductive material directly against the second conductive material; the third conductive material being a different composition relative to the second conductive material, and comprising one or more of Ir, Ru, Rh, Ti and W.

15. The transistor of claim 14 wherein the second conductive material is shaped as an upwardly-opening container, and wherein the third conductive material is entirely within the upwardly-opening container shape of the second conductive material.

16. The transistor of claim 14 wherein the third conductive material further comprises one or more of Al, C, N and Si.

17. The transistor of claim 14 wherein the first conductive material is part of a conductive block which includes a fourth conductive material in combination with the first conductive material; the conductive block having an outer peripheral surface which includes an upper surface; the upper surface comprising regions of the first and fourth conductive materials, and the second conductive material being over and directly against the upper surface of the conductive block; all portions of the outer peripheral surface of the conductive block besides the upper surface only comprising the first conductive material.

18. The transistor of claim 17 wherein the third and fourth conductive materials are a same composition as one another.

19. The transistor of claim 17 wherein the third and fourth conductive materials are different compositions relative to one another.