Semiconductor layout structure

1. A semiconductor layout structure, comprising:

a substrate;

a plurality of active blocks, disposed on said substrate, parallel with each other and extending along a first direction;

a plurality of first shallow trench isolations, disposed on said substrate, parallel with each other and respectively disposed between said plurality of active blocks; and

a plurality of second shallow trench isolations, disposed on said substrate, cutting through said plurality of active blocks and extending along a second direction, wherein said first direction and said second direction have an angle between 1 degree to 53 degrees.

2. The semiconductor layout structure of claim 1 , further comprising:

a plurality of word lines, disposed on said substrate, parallel with each other and extending along a third direction, wherein said first direction and said third direction have an angle between 30 degrees to 60 degrees.

3. The semiconductor layout structure of claim 1 , further comprising:

a plurality of bit line contacts, disposed on said substrate, parallel with each other, respectively disposed between said plurality of second shallow trench isolations and extending along said second direction, wherein said plurality of bit line contacts respectively divide said plurality of active blocks into a gate area overlapping said plurality of bit line contacts, as well as a source region and a drain region disposed at both sides of said gate region.

4. The semiconductor layout structure of claim 2 , further comprising:

a plurality of bit lines, disposed on said substrate and simultaneously parallel with each other, wherein said plurality of word lines and said plurality of bit lines are substantially perpendicular to each other.

5. The semiconductor layout structure of claim 4 , wherein said plurality of word lines and said plurality of bit lines have an angle from 85 degrees to 95 degrees.

6. A semiconductor layout structure, comprising:

a substrate;

a plurality of active blocks, disposed on said substrate, parallel with each other and extending along a first direction;

a plurality of first shallow trench isolations, disposed on said substrate, parallel with each other and respectively disposed between said plurality of active blocks;

a plurality of second shallow trench isolations, disposed on said substrate, cutting through said plurality of active blocks so that said plurality of active blocks become a plurality of active areas which are electrically insulated to each other, and extending along a second direction, wherein said first direction and said second direction have an angle between 1 degree to 53 degrees;

a plurality of word lines, disposed on said substrate, parallel with each other and extending along a third direction, wherein said first direction and said third direction have an angle between 30 degrees to 60 degrees;

a plurality of bit line contacts, disposed on said substrate, parallel with each other, respectively disposed between said plurality of second shallow trench isolations and extending along said second direction, wherein said plurality of bit line contacts respectively divide said plurality of active areas into a gate area overlapping said plurality of bit line contacts, as well as a source region and a drain region disposed at both sides of said gate region;

a plurality of bit lines, disposed on said substrate and simultaneously parallel with each other, wherein said plurality of word lines and said plurality of bit lines are substantially perpendicular to each other; and

a plurality of capacitor regions and a plurality of gaps alternately disposed in said plurality of active blocks, wherein said plurality of capacitor regions overlap said plurality of second shallow trench isolations and said plurality of word lines, and said plurality of bit line contacts overlap said plurality of gaps.

7. The semiconductor layout structure of claim 6 , wherein said plurality of word lines and said plurality of bit lines have an angle from 85 degrees to 95 degrees.