Integrated memory
Some embodiments include an integrated memory having an array of capacitors. The array has edges. The capacitors along the edges are edge capacitors, and the other capacitors are internal capacitors. The edge capacitors have inner edges facing toward the internal capacitors, and have outer edges in opposing relation to the inner edges. An insulative beam extends laterally between the capacitors. The insulative beam is along upper regions of the capacitors. First void regions are under the insulative beam, along lower regions of the internal capacitors, and along the inner edges of the edge capacitors. Peripheral extensions of the insulative beam extend laterally outward of the edge capacitors, and second void regions are under the peripheral extensions and along the outer edges of the edge capacitors. Some embodiments included integrated assemblies having two or more memory array decks stacked on atop another. Some embodiments include methods of forming memory arrays.
1. Integrated memory, comprising:
an array of capacitors; the array comprising edges and the capacitors along the edges being edge capacitors; the capacitors that are not along the edges being internal capacitors of the array; the edge capacitors having inner edges facing toward the internal capacitors, and having outer edges in opposing relation to the inner edges; the capacitors having upper regions, and having lower regions beneath the upper regions;
an insulative beam extending laterally between the capacitors, the insulative beam being along the upper regions of the capacitors; first void regions being under the insulative beam, along the lower regions of the internal capacitors, and along the inner edges of the edge capacitors; peripheral extensions of the insulative beam extending laterally outward of at least some of the edge capacitors, and second void regions being under the peripheral extensions and along the outer edges of said at least some of the edge capacitors; and
an insulative structure over the array of capacitors and over the insulative beam; the insulative structure having lateral edge regions extending downwardly and being outward of the outer edges of said at least some of the edge capacitors; the lateral edge regions of the insulative structure being spaced from the outer edges of said at least some of the edge capacitors by the second void regions.
2. The integrated memory of claim 1 , wherein one or more of the edge capacitors are dummy structures which are not comprised by functioning memory cells of the integrated memory.
3. The integrated memory of claim 1 , wherein said at least some of the edge capacitors is all of the edge capacitors.
4. The integrated memory of claim 3 , wherein all of the edge capacitors are comprised by functioning memory cells of the integrated memory.
5. Integrated memory, comprising:
capacitors; the capacitors having first electrodes, second electrodes, and insulative capacitor material between the first and second electrodes; the capacitors having lower regions and upper regions over the lower regions; the capacitors being arranged in array, the array comprising edges and the capacitors along the edges being edge capacitors; the capacitors that are not along the edges being internal capacitors of the array; the edge capacitors having inner edges facing toward the internal capacitors, and having outer edges in opposing relation to the inner edges;
an insulative beam extending laterally between the capacitors, the insulative beam being along the upper regions of the capacitors; first void regions being under the insulative beam, along the lower regions of the internal capacitors, and along the inner edges of the edge capacitors; peripheral extensions of the insulative beam extending laterally outward of the edge capacitors and second void regions being under the peripheral extensions and along the outer edges of the edge capacitors;
transistors under the capacitors and having first regions, second regions, and channel regions between the first and second regions; the first regions being electrically coupled with the first electrodes of the capacitors;
access lines along the channel regions, and extending along rows of the array;
digit lines electrically coupled with the second regions of the transistors, and extending along columns of the array;
at least one conductive plate over the array and electrically coupled with the second electrodes of the capacitors; and
an insulative structure over the at least one conductive plate and having lateral edge regions extending downwardly and surrounding the array; the lateral edge regions of the insulative structure being spaced from the outer edges of the edge capacitors by the second void regions.
6. The integrated memory of claim 5 , comprising a lattice structure beneath the insulative beam and extending between the capacitors.
7. The integrated memory of claim 5 , wherein one or more of the edge capacitors are dummy structures which are not comprised by functioning memory cells of the integrated memory.
8. The integrated memory of claim 5 , wherein all of the edge capacitors are comprised by functioning memory cells of the integrated memory.
9. The integrated memory of claim 5 , wherein the insulative capacitor material comprises ferroelectric material.
10. The integrated memory of claim 5 , wherein the insulative capacitor material comprises only non-ferroelectric material.
11. The integrated memory of claim 5 , wherein the first void regions extend downwardly to between the access lines.
12. The integrated memory of claim 11 , wherein the digit lines are under the access lines, and wherein the first void regions extend downwardly to between the digit lines.